Enhanced charge storage characteristics of silicon nanocrystals fabricated by electron-beam coevaporation of Si and SiOx(x=1 or 2)
| Data(s) |
2009
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| Resumo |
In this article, a simple and flexible electron-beam coevaporation (EBCE) technique has been reported of fabrication of the silicon nanocrystals (Si NCs) and their application to the nonvolatile memory. For EBCE, the Si and SiOx(x=1 or 2) were used as source materials. Transmission electron microscopy images and Raman spectra measurement verified the formation of the Si NCs. The average size and area density of the Si NCs can be adjusted by increasing the Si:O weight ratio in source material, which has a great impact on the crystalline volume fraction of the deposited film and on the charge storage characteristics of the Si NCs. A memory window as large as 6.6 V under +/- 8 V sweep voltage was observed for the metal-oxide-semiconductor capacitor structure with the embedded Si NCs. 973 Projects 2006CB604904 2009CB939703 Chinese NSF 60706023 606760019040100290607022CAS YZ0635 |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Chen, C (Chen, Chen); Jia, R (Jia, Rui); Li, WL (Li, Weilong); Li, HF (Li, Haofeng); Ye, TC (Ye, Tianchun); Liu, XY (Liu, Xinyu); Liu, M (Liu, Ming); Kasai, S (Kasai, Seiya); Tamotsu, H (Tamotsu, Hashizume); Wu, NJ (Wu, Nanjian) .Enhanced charge storage characteristics of silicon nanocrystals fabricated by electron-beam coevaporation of Si and SiOx(x=1 or 2) ,JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,NOV 2009 ,27(6):2462-2467 |
| Palavras-Chave | #微电子学 #electron beam deposition |
| Tipo |
期刊论文 |
