Analyse des processus de dérive lors de la gravure profonde du silicium dans des plasmas SF6 et C4F8

L’objectif de ce mémoire de maîtrise est de développer des outils de diagnostics non-invasifs et de caractériser in-situ les dérives de procédé dans un réacteur industriel utilisé en production pour la gravure profonde du silicium par le procédé Bosch. Ce dernier repose sur l’alternance d’un plasma de SF6 pour la gravure isotrope du Si et d’un plasma de C4F8 pour la passivation des parois dans l’optique d’obtenir des tranchées profondes et étroites. Dans un premier temps, nous avons installé une sonde courant-tension sur la ligne de transmission du signal rf au porte-substrat pour l’étude de son impédance caractéristique et un spectromètre optique pour l’étude de l’émission optique du plasma. Nos travaux ont montré que l’évolution temporelle de l’impédance constitue un excellent moyen pour identifier des changements dans la dynamique du procédé, notamment une gravure complète de la photorésine. De plus, à partir des spectres d’émission, nous avons pu montrer que des produits carbonés sont libérés du substrat et des parois lors de l’alternance passivation/gravure et que ceux-ci modifient considérablement la concentration de fluor atomique dans le plasma. Dans un second temps, nous avons développé un réacteur à « substrat-tournant » pour l’analyse in-situ des interactions plasma-parois dans le procédé Bosch. Nos travaux sur ce réacteur visaient à caractériser par spectrométrie de masse l’évolution temporelle des populations de neutres réactifs et d’ions positifs. Dans les conditions opératoires étudiées, le SF6 se dissocie à près de 45% alors que le degré de dissociation du C4F8 atteint 70%. Le SF6 est avant tout dissocié en F et SF3 et l’ion dominant est le SF3+ alors que le C4F8 est fragmenté en CF, CF3 et CF4 et nous mesurons plusieurs ions significatifs. Dans les deux cas, la chaîne de dissociation demeure loin d’être complète. Nous avons noté une désorption importante des parois de CF4 lors du passage du cycle de passivation au cycle de gravure. Un modèle d’interactions plasmas-parois est proposé pour expliquer cette observation.

Equilibrium and relaxation of particulate charge in fluorocarbon plasmas

Charging of micron-size particulates, often appearing in fluorocarbon plasma etching experiments, is considered. It is shown that in inductively coupled and microwave slot-excited plasmas of C4F8 and Ar gas mixtures, the equilibrium particle charge and charge relaxation processes are controlled by a combination of microscopic electron, atomic (Ar+ and F+), and molecular ion (CF+ 3, CF+ 2, and CF+) currents. The impact of molecular ion currents on the particulate charging and charge relaxation processes is analyzed. It is revealed that in low-power (<0.5 kW) microwave slot-excited plasmas, the impact of the combined molecular ion current to the total positive microscopic current on the particle can be as high as 40%. The particulate charge relaxation rate in fluorocarbon plasmas appears to exceed 108 s-1, which is almost one order of magnitude higher than that from purely argon plasmas. This can be attributed to the impact of positive currents of fluorocarbon molecular ions, as well as to the electron density fluctuations with particle charge, associated with electron capture and release by the particulates.

Charging and trapping of macroparticles in near-electrode regions of fluorocarbon plasmas with negative ions

Charging and trapping of macroparticles in the near-electrode region of fluorocarbon etching plasmas with negative ions is considered. The equilibrium charge and forces on particles are computed as a function of the local position in the plasma presheath and sheath. The ionic composition of the plasma corresponds to the etching experiments in 2.45 GHz surface-wave sustained and 13.56 MHz inductively coupled C4F8+Ar plasmas. It is shown that despite negligible negative ion currents collected by the particles, the negative fluorine ions affect the charging and trapping of particulates through modification of the sheath/presheath structure.

On Calculation Of Breakdown Voltages Of Mixtures Of Electron Attaching Gases

In this paper we report the analysis of dc breakdown tests on mixtures of CC12F2, SF6, C-C4F8, 2-C4F8, N2, C02, CF4, CHF3, and 1,1,1-CH3CF3 gases on the basis of the NKH formula Vmix=k(pd)aNbUC developed by us earlier for the binary mixtures of SF6 with air, N2, N20, and CO2. It is shown that while a and c have the values 0.915 and 0.850 respectively as earlier, k and b depend on the component gases. There is a good agreement between the calculated values on the basis of the formula and measured values reported in the literature.

On Calculation Of Breakdown Voltages Of Mixtures Of Electron Attaching Gases

In this paper we report the analysis of dc breakdown tests on mixtures of CC12F2, SF6, C-C4F8, 2-C4F8, N2, C02, CF4, CHF3, and 1,1,1-CH3CF3 gases on the basis of the NKH formula Vmix=k(pd)aNbUC developed by us earlier for the binary mixtures of SF6 with air, N2, N20, and CO2. It is shown that while a and c have the values 0.915 and 0.850 respectively as earlier, k and b depend on the component gases. There is a good agreement between the calculated values on the basis of the formula and measured values reported in the literature.

ICP刻蚀参数对SOI脊形波导侧壁粗糙度的影响

研究了以C4F8/SF6/O2为刻蚀气体,利用ICP刻蚀技术制作SOI脊形光波导过程中,刻蚀参数与侧壁粗糙度的关系.实验结果表明偏压、气体比例、压强是影响侧壁粗糙度的关键参数,在低偏压、低C4F8/SF6比和较高压强下更容易获得低粗糙度的侧壁.通过优化刻蚀参数,获得了侧壁粗糙度和传输损耗相对较低的SOI脊形波导.

Plasma polymerization of C[subscript 4]F[subscript 8] thin film on high aspect ratio silicon molds

High aspect ratio polymeric micro-patterns are ubiquitous in many fields ranging from sensors, actuators, optics, fluidics and medical. Second generation PDMS molds are replicated against first generation silicon molds created by deep reactive ion etching. In order to ensure successful demolding, the silicon molds are coated with a thin layer of C[subscript 4]F[subscript 8] plasma polymer to reduce the adhesion force. Peel force and demolding status are used to determine if delamination is successful. Response surface method is employed to provide insights on how changes in coil power, passivating time and gas flow conditions affect plasma polymerization of C[subscript 4]F[subscript 8].

Malachite green in food

The Panel wishes to thank the members of the Standing Working Group on non-allowed pharmacologically active substances in food and feed and their reference points for action (2015–2018): Metka Filipič, Peter Fürst, Laurentius (Ron) Hoogenboom, Anne-Katrine Lundebye, Carlo Stefano Nebbia, Michael O'Keeffe and Rolaf Van Leeuwen for the preparatory work on this scientific output, the hearing expert: Eva Persson, and EFSA staff members: Katleen Baert and Sofia Ioannidou for the support provided to this scientific opinion. The CONTAM Panel acknowledges all European competent institutions and other stakeholders that provided occurrence data on malachite green and leucomalachite green in food, and supported the data collection for the Comprehensive European Food Consumption Database.