Un acte de guérilla : la pseudonymie en Afrique francophone subsaharienne

L'affirmation de soi à travers l'adoption d'un pseudonyme se présente comme une forme d'autocréation qui répond à l'acte d'écriture, en tant que forme première d'une individualité dans la langue. Le nouveau nom remplit la fonction symbolique d'invention de soi par la nomination, tout en jouant, chez certains écrivains d'Afrique noire, de l'inscription d'une autre langue au sein de l'onomastique française. Pour certains d'entre eux, l'autonomination apparaît même comme un acte de guérilla, une affirmation de soi et non une dissimulation, marquée au coin de l'onomastique africaine et d'un contexte historico-politique qui lui donne sens. Dans le cadre de cet article, à considérer comme l'esquisse d'une réflexion abordant un champ encore peu exploré, il s'agit d'envisager les divers enjeux de la nomination en Afrique noire, puis d'interroger les pratiques d'écrivains pseudonymes, tels Sony Labou Tansi, Mongo Beti et Ken Bugul, qui constituent des cas de figure particulièrement significatifs de cette pratique. Self-affirmation via the adoption of a pseudonym constitues a form of self-creation springing from the act of writing, in the guise of a primary shape given within language to an individual. The new name fulfills the symbolic function of inventing oneself through nomination while playing on - in the instance of certain black African writers - the inscription of another language within French onomastics. For one, self-naming appears as a « guerilla action », an affirmation of self and not its dissimulation, marked on the edges by African onomastics and an historico-political context that gives the meaning. In this article, offered as an outline of an approch to an little-explored field of investigation, we seek to identify the various stakes related to naming in black Africa, before examining specific techniques demonstrated by pseudonymous writers such as Sony Labou Tansi, Mongo Beti, and Ken Bugul, taken as exemplary and particulary significant in this domain.

1ère journée vaudoise des pratiques infirmières en psychiatrie: actes des interventions

Introduction / Jean-Michel Kaision - Pratique de centre thérapeutique de jour / Yves Donon ... [et al.] - La contention interrogée / Didier Camus, Yves Cossy - Modèle de soins par référent / Catherine Matter, Jean-Bernard Moreillon - Soins en milieu carcéral / Joaquin Lopez - Groupes thérapeutiques d'affirmation de soi / Clarisse Waller, Aziz Salamat

Programme d'entraînement aux habiletés sociales pour des enfants ayant un trouble envahissant du développement non spécifié

Rapport d'analyse d'intervention présenté à la Faculté des arts et sciences en vue de l'obtention du grade de Maîtrise ès sciences (M. Sc.) en psychoéducation.

M'affirmer, ce n'est pas sorcier : programme visant à prévenir le risque de victimisation chez les enfants de maternelle en améliorant leur capacité à s'affirmer positivement

Rapport d'analyse d'intervention présenté à la Faculté des arts et sciences en vue de l'obtention du grade de Maîtrise ès sciences (M. Sc.) en psychoéducation.

Une étude examinant les retombées d'une programmation éducative par l'aventure sur les habiletés personnelles et sociales visant à contribuer à la prévention de l'intimidation chez de jeunes victimes potentielles.

Au Québec, comme dans le reste du monde, les agents du milieu de l'éducation sont de plus en plus concernés par le phénomène de l'intimidation chez les jeunes. Plusieurs programmes ont été conçus pour aider à contrer ce problème. Toutefois, peu d'études se sont penchées sur l'intervention au moyen de l'approche de l'éducation par l'aventure et du plein air. L'objectif de cette étude est de déterminer comment la socialisation peut être développée chez de jeunes victimes à risque, en ayant recours à ce type d'approche. Une recherche qualitative s'est donc penchée sur un projet d'intervention ayant appliqué le modèle de la séquence d'aventure, pour contribuer à prévenir la victimisation au troisième cycle du primaire. Les résultats révèlent que plusieurs moyens propres à ce type d'intervention s'avèrent efficaces au renforcement des habiletés personnelles et sociales, telles: l'affirmation de soi, la confiance en soi et l'ouverture aux autres.

La chose en soi comme concept «critique» : le problème de la limitation de la connaissance dans la Critique de la raison pure de Kant

Dans ce mémoire, nous nous proposons de montrer que le concept kantien de chose en soi est à la fois un concept métaphysique et un concept critique. En ce sens, la chose en soi doit être comprise comme un objet transcendantal réel qui existe à titre de cause des phénomènes. Si, contrairement à ce que soutenaient F.H. Jacobi (1787) et G.E. Schulze (1791), cela ne suppose pas de sortir du criticisme, c'est qu'une telle affirmation prend la forme d'une connaissance analogique qui respecte les limites de la connaissance humaine. De fait, la connaissance analogique permet de pointer en direction de quelque chose dont la nature (Beschaffenheit) peut demeurer problématique, tout en permettant d'affirmer son existence (Dasein). Nous serons dès lors conduite à montrer que la Critique de la raison pure fournit bel et bien les outils nécessaires permettant de rendre compte de l’existence des choses en soi à titre de causes des phénomènes.

Merleau-Ponty et la connaissance de soi

Notre objectif est d’habiliter la conception merleau-pontienne de la connaissance de soi. La difficulté consiste en ce que Merleau-Ponty fait reposer tout savoir sur un contexte perceptif que le sujet est par principe incapable d’appréhender dans sa totalité. La connaissance s’appuie ainsi sur un contexte comportant des zones d’ombre qui éludent la réflexion. Nous éclairons d’abord cette affirmation générale à partir de deux principes fondamentaux empruntés à la Gestalttheorie, dont le premier stipule que la donnée de base de la perception est une figure sur un fond et le second que nos structures mentales cherchent l’équilibre. Nous appliquons ensuite ces prémisses au problème spécifique de la connaissance de soi. Cette présentation nous permet de cibler deux obstacles à notre prétention : l’irréductibilité du sujet à ce qu’il donne à voir dans l’effort réflexif, ainsi que sa liberté fondamentale, contaminant la vérité de son caractère arbitraire. Finalement, nous montrons que ces deux obstacles ne sont qu’apparents, à condition toutefois de renoncer à une connaissance de soi absolue, et de ménager un espace entre le déterminisme et la liberté.

Trapezoidal SOI FinFET analog parameters` dependence on cross-section shape

The trapezium is often a better approximation for the FinFET cross-section shape, rather than the design-intended rectangle. The frequent width variations along the vertical direction, caused by the etching process that is used for fin definition, may imply in inclined sidewalls and the inclination angles can vary in a significant range. These geometric variations may cause some important changes in the device electrical characteristics. This work analyzes the influence of the FinFET sidewall inclination angle on some relevant parameters for analog design, such as threshold voltage, output conductance, transconductance, intrinsic voltage gain (A V), gate capacitance and unit-gain frequency, through 3D numeric simulation. The intrinsic gain is affected by alterations in transconductance and output conductance. The results show that both parameters depend on the shape, but in different ways. Transconductance depends mainly on the sidewall inclination angle and the fixed average fin width, whereas the output conductance depends mainly on the average fin width and is weakly dependent on the sidewall inclination angle. The simulation results also show that higher voltage gains are obtained for smaller average fin widths with inclination angles that correspond to inverted trapeziums, i.e. for shapes where the channel width is larger at the top than at the transistor base because of the higher attained transconductance. When the channel top is thinner than the base, the transconductance degradation affects the intrinsic voltage gain. The total gate capacitances also present behavior dependent on the sidewall angle, with higher values for inverted trapezium shapes and, as a consequence, lower unit-gain frequencies.

Threshold voltages of SOI MuGFETs

The multiple-gate field-effect transistor (MuGFET) is a device with a gate folded on different sides of the channel region. They are one of the most promising technological solutions to create high-performance ultra-scaled SOI CMOS. In this work, the behavior of the threshold voltage in double-gate, triple-gate and quadruple-gate SOI transistors with different channel doping concentrations is studied through three-dimensional numerical simulation. The results indicated that for double-gate transistors, one or two threshold voltages can be observed, depending on the channel doping concentration. However, in triple-gate and quadruple-gate it is possible to observe up to four threshold voltages due to the corner effect and the different doping concentration between the top and bottom of the Fin. (C) 2008 Elsevier Ltd. All rights reserved.

Improved generation lifetime model for the electrical characterization of single- and double-gate SOI nMOSFETs

This work proposes a refined technique for the extraction of the generation lifetime in single- and double-gate partially depleted SOI nMOSFETs. The model presented in this paper, based on the drain current switch-off transients, takes into account the influence of the laterally non-uniform channel doping, caused by the presence of the halo implanted region, and the amount of charge controlled by the drain and source junctions on the floating body effect when the channel length is reduced. The obtained results for single- gate (SG) devices are compared with two-dimensional numerical simulations and experimental data, extracted for devices fabricated in a 0.1 mu m SOI CMOS technology, showing excellent agreement. The improved model to determine the generation lifetime in double-gate (DG) devices beyond the considerations previously presented also consider the influence of the silicon layer thickness on the drain current transient. The extracted data through the improved model for DG devices were compared with measurements and two-dimensional numerical simulations of the SG devices also presenting a good adjustment with the channel length reduction and the same tendency with the silicon layer thickness variation.

Temperature influence on the gate-induced floating body effect parameters in fully depleted SOI nMOSFETs

The temperature influence on the gate-induced floating body effect (GIFBE) in fully depleted (FD) silicon-on-insulator (SOI) nMOSFETs is investigated, based on experimental results and two-dimensional numerical simulations. The GIFBE behavior will be evaluated taking into account the impact of carrier recombination and of the effective electric field mobility degradation on the second peak in the transconductance (gm). This floating body effect is also analyzed as a function of temperature. It is shown that the variation of the studied parameters with temperature results in a ""C"" shape of the threshold voltage corresponding with the second peak in the gm curve. (C) 2008 Elsevier Ltd. All rights reserved.

Analysis of source-follower buffers implemented with graded-channel SOI nMOSFETs operating at cryogenic temperatures

This work studies the operation of source-follower buffers implemented with standard and graded-channel (GC) fully depleted (FD) SCI nMOSFETs at low temperatures. The analysis is performed by comparing the voltage gain of buffers implemented with GC and standard SOI nMOS transistors considering devices with the same mask channel length and same effective channel length. It is shown that the use of GC devices allows for achieving improved gain in all inversion levels in a wide range of temperatures. In addition, this improvement increases as temperature is reduced. It is shown that GC transistors can provide virtually constant gain, while for standard devices, the gain departs from the maximum value depending on the temperature and inversion level imposed by the bias current and input voltage. Two-dimensional numerical simulations were performed in order to study the reasons for the enhanced gain of GC MOSFETs at low temperatures. (C) 2009 Elsevier Ltd. All rights reserved.

Advantages of graded-channel SOI nMOSFETs for application as source-follower analog buffer

In this work the performance of graded-channel (CC) SOI MOSFETs operating as source-follower buffers is presented. The experimental analysis is performed by comparing the gain and linearity of buffers implemented with CC and standard SOI MOS devices considering the same mask dimensions. It is shown that by using CC devices, buffer gain very close to the theoretical limit can be achieved, with improved linearity, while for standard devices the gain departs from the theoretical value depending on the inversion level imposed by the bias current and input voltage. Two-dimensional numerical simulations were performed in order to confirm some hypotheses proposed to explain the gain behavior observed in the experimental data. By using numerical simulations the channel length has been varied, showing that the gain of buffers implemented with CC devices remains close to the theoretical limit even when short-channel devices are adopted. It has also been shown that the length of a source-follower buffer using CC devices can be reduced by a factor of 5, in comparison with a standard Sol MOSFET, without gain loss or linearity degradation. (C) 2008 Elsevier Ltd. All rights reserved.

Forecasting regional crop production using SOI phases: an example for the Australian peanut industry

Using peanuts as an example, a generic methodology is presented to forward-estimate regional crop production and associated climatic risks based on phases of the Southern Oscillation Index (SOI). Yield fluctuations caused by a highly variable rainfall environment are of concern to peanut processing and marketing bodies. The industry could profitably use forecasts of likely production to adjust their operations strategically. Significant, physically based lag-relationships exist between an index of ocean/atmosphere El Nino/Southern Oscillation phenomenon and future rainfall in Australia and elsewhere. Combining knowledge of SOI phases in November and December with output from a dynamic simulation model allows the derivation of yield probability distributions based on historic rainfall data. This information is available shortly after planting a crop and at least 3-5 months prior to harvest. The study shows that in years when the November-December SOI phase is positive there is an 80% chance of exceeding average district yields. Conversely, in years when the November-December SOI phase is either negative or rapidly falling there is only a 5% chance of exceeding average district yields, but a 95% chance of below average yields. This information allows the industry to adjust strategically for the expected volume of production. The study shows that simulation models can enhance SOI signals contained in rainfall distributions by discriminating between useful and damaging rainfall events. The methodology can be applied to other industries and regions.