DENSITY-OF-STATES OF THE 2-DIMENSIONAL ELECTRON-GAS STUDIED BY MAGNETOCAPACITANCES OF BIASED DOUBLE-BARRIER STRUCTURES

The magnetocapacitive response of a double-barrier structure (DBS), biased beyond resonances, has been employed to determine the density of states (DOS) of the two-dimensional electron gas residing in the accumulation layer on the incident side of the DBS. An adequate procedure is developed to compare the model calculation of the magnetocapacitance with the experimental C vs B curves measured at different temperatures and biases. The results show that the fitting is not only self-consistent but also remarkably good even in well-defined quantum Hall regimes. As a result, information about the DOS in strong magnetic fields could reliably be extracted.

INFRARED-ABSORPTION DUE TO 2-DIMENSIONAL-ELECTRON-GAS COLLECTIVE EXCITATION IN GAAS/ALXGA1-XAS MULTIPLE-QUANTUM-WELL STRUCTURES

Infrared absorption due to a collective excitation of a two-dimensional electronic gas was observed in GaAs/AlxGa1-xAs multiple-quantum wells when the incident light is polarized parallel to the quantum-well plane. We attribute this phenomenon to a plasma oscillation in the quantum wells. The measured wavelength of the absorption peak due to the plasma oscillation agrees with our theoretical analysis. In addition, in this study the plasma-phonon coupling effect is also fitted to the experimental result. We show that the absorption is not related to the intersubband transitions but to the intrasubband transition, which originates from a plasma oscillation.

Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane AlGaN/GaN heterostructures

Photoluminescence (PL) and temperature-dependent Hall effect measurements were carried out in (0001) and (11 (2) over bar0) AlGaN/GaN heterostructures grown on sapphire substrates by metalorganic chemical vapor deposition. There are strong spontaneous and piezoelectric electric fields (SPF) along the growth orientation of the (0001) AlGaN/GaN heterostructures. At the same time there are no corresponding SPF along that of the (1120) AlGaN/GaN. A strong PL peak related to the recombination between two-dimensional electron gas (2DEG) and photoexcited holes was observed at 3.258 eV at room temperature in (0001) AlGaN/GaN heterointerfaces while no corresponding PL peak was observed in (11 (2) over bar0). The existence of a 2DEG was observed in (0001) AlGaN/GaN multi-layers with a mobility saturated at 6000 cm(2)/V s below 80 K, whereas a much lower mobility was measured in (11 (2) over bar0). These results indicated that the SPF was the main element to cause the high mobility and high sheet-electron-density 2DEG in AlGaN/GaN heterostructures. (C) 2004 Elsevier B.V. All rights reserved.

Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane AlGaN/GaN heterostructures

Photoluminescence (PL) and temperature-dependent Hall effect measurements were carried out in (0001) and (11 (2) over bar0) AlGaN/GaN heterostructures grown on sapphire substrates by metalorganic chemical vapor deposition. There are strong spontaneous and piezoelectric electric fields (SPF) along the growth orientation of the (0001) AlGaN/GaN heterostructures. At the same time there are no corresponding SPF along that of the (1120) AlGaN/GaN. A strong PL peak related to the recombination between two-dimensional electron gas (2DEG) and photoexcited holes was observed at 3.258 eV at room temperature in (0001) AlGaN/GaN heterointerfaces while no corresponding PL peak was observed in (11 (2) over bar0). The existence of a 2DEG was observed in (0001) AlGaN/GaN multi-layers with a mobility saturated at 6000 cm(2)/V s below 80 K, whereas a much lower mobility was measured in (11 (2) over bar0). These results indicated that the SPF was the main element to cause the high mobility and high sheet-electron-density 2DEG in AlGaN/GaN heterostructures. (C) 2004 Elsevier B.V. All rights reserved.

Suppression of low-frequency noise in two-dimensional electron gas at degenerately doped Si:P delta layers

We report low-frequency 1/f-noise measurements of degenerately doped Si:P delta layers at 4.2 K. The noise was found to be over six orders of magnitude lower than that of bulk Si:P systems in the metallic regime and is one of the lowest values reported for doped semiconductors. The noise was nearly independent of magnetic field at low fields, indicating negligible contribution from universal conductance fluctuations. Instead, the interaction of electrons with very few active structural two-level systems may explain the observed noise magnitude.

STUDY ON MICROWAVE CYCLOTRON RESONANCE OF HIGH-MOBILITY GaAs/Al-0.35 Ga-0.65 As TWO-DIMENSIONAL ELECTRON GAS

The properties of electron states in the presence of microwave irradiation play a key role in understanding the oscillations of longitudinal resistance and the zero-resistance states in a high-mobility two-dimensional electron gas(2DEG) in low magnetic field. The properties of electron states in a high-mobility and low-density GaAs/Al0.35Ga0.65As 2DEG in the presence of Ka-band microwave irradiation were studied by reflectance-based optically detected cyclotron resonance(RODCR). The influences of the direction of microwave alternating electronic field, wavelength of the laser, and temperature on RODCR results were discussed. The results show that RODCR measurements provide a convenient and powerful method for studying electron states in 2DEG.

Neutron irradiation effect in two-dimensional electron gas of AlGaN/GaN heterostructures

AlGaN/GaN heterostructures have been irradiated by neutrons with different influences and characterized by means of temperature-dependent Hall measurements and Micro-Raman scattering techniques. It is found that the carrier mobility of two-dimensional electron gas (2DEG) is very sensitive to neutrons. At a low influence of 6.13 x 10(15) cm(-2), the carrier mobility drops sharply, while the sheet carrier density remains the same as that of an unirradiated sample. Moreover, even for a fluence of up to 3.66 x 10(16) cm(-2), the sheet carrier density shows only a slight drop. We attribute the degradation of the figure-of-merit (product of n(s) x mu) of 2DEG to the defects induced by neutron irradiation. Raman measurements show that neutron irradiation does not yield obvious change to the strain state of AlGaN/GaN heterostructures, which proves that degradation of sheet carrier density has no relation to strain relaxation in the present study. The increase of the product of n(s) x mu of 2DEG during rapid thermal annealing processes at relatively high temperature has been attributed to the activation of Ge-Ga transmuted from Ga and the recovery of displaced defects.

Spin precession induced by an effective magnetic field in a two-dimensional electron gas

We theoretically study the spatial behaviors of the spin precession in a two-dimensional electron system with spin-orbit interaction. Through analysis of interaction between the spin and the effective magnetic field in the system, we obtain the general conditions to generate a persistent spin helix and predict a persistent spin helix pattern in [001]-grown quantum wells. Particularly, we demonstrate that the phase of spin can be locked to propagate in a quantum well with SU(2) symmetry.

Circular photogalvanic effect of the two-dimensional electron gas in AlXGa1-XN/GaN heterostructures under uniaxial strain

The circular photogalvanic effect (CPGE) of the two-dimensional electron gas (2DEG) in Al0.25Ga0.75N/GaN heterostructures induced by infrared radiation has been investigated under uniaxial strain. The observed photocurrent consists of the superposition of the CPGE and the linear photogalvanic effect currents, both of which are up to 10(-2) nA. The amplitude of the CPGE current increases linearly with additional strain and is enhanced by 18.6% with a strain of 2.2x10(-3). Based on the experimental results, the contribution of bulk-inversion asymmetry (BIA) and structure-inversion asymmetry (SIA) spin splitting of the 2DEG to the CPGE current in the heterostructures is separated, and the ratio of SIA and BIA terms is estimated to be about 13.2, indicating that the SIA is the dominant mechanism to induce the k-linear spin splitting of the subbands in the triangular quantum well at AlxGa1-xN/GaN heterointerfaces. (C) 2007 American Institute of Physics.

Magneto-transport characteristics of two-dimensional electron gas for Si delta-doped InAlAs/InGaAs single quantum well

Magneto-transport measurements have been carried out on a Si heavily delta-doped In0.52Al0.48As/In(0.53)G(0.47)As single quantum well in the temperature range between 1.5 and 60 K under magnetic field up to 10 T. We studied the Shubnikov-de Haas(SdH) effect and the Hall effect for the In0.52Al0.48As/In(0.53)G(0.47)As single quantum well occupied by two subbands, and have obtained the electron concentration, mobility, effective mass and energy levels respectively. The electron concentrations of the two subbands derived from mobility spectrum combined with multi-carrier fitting analysis are well consistent with the result from the SdH oscillation. From fast Fourier transform analysis for d(2)rho/dB(2)-1/B, it is observed that there is a frequency of f(1)-f(2) insensitive to the temperature, besides the frequencies f(1), f(2) for the two subbands and the frequency doubling 2f(1), both dependent on the temperature. This is because That the electrons occupying the two different subbands almost have the same effective mass in the quantum well and the magneto-intersubband scattering between the two subbands is strong.