Écrire dans la classe de français à la FGA : processus créateur, motivation et culture de l'écrit

Dans notre recherche-intervention, nous nous sommes questionnée sur les façons d’instaurer motivation et culture de l’écrit dans la classe de français, chez les élèves du présecondaire à la cinquième secondaire, inscrits à la Formation Générale aux Adultes (FGA) au Centre Marchand de la Commission scolaire de la Rivière-du-Nord, à travers un processus créateur authentique et signifiant qui modifie les rapports parfois difficiles entre les élèves et l’écrit. Tout en tenant compte des caractéristiques des élèves concernés, nous avons abordé, entre autres, la créativité, le rapport entre soi, l’autre et le monde grâce à l’écriture libre, les interactions entre la lecture, l’écriture et l’oral, la motivation, le savoir-écrire en tant que compétence, le plaisir du texte et la démocratisation de l’écrit. Proposant une vision renouvelée de l’écriture, nous avons inclus dans nos classes des activités qui rompaient avec l’enseignement traditionnel du français (les ateliers d’écriture) et des outils qui favorisaient la continuité des tâches et l’autoévaluation (le portfolio de présentation, le recueil et la bande-annonce). Ces tâches nous ont permis d’instaurer une culture de l’écrit et d’agir sur la motivation des élèves. Nous en sommes arrivée à produire une analyse critique des modes d’intervention à privilégier pour que le processus créateur occupe la place qui lui revient dans la classe de français et pour que l’engagement des élèves, dans l’acte d’écrire, devienne plus signifiant et plus authentique, donc, conséquemment, plus motivant. Bref, conformément à l’esprit du renouveau pédagogique qui a fait son entrée au secondaire en 2005, nous souhaitons que notre recherche aide les enseignants de français à réévaluer l’importance du processus créateur, lequel fait partie intégrante de l’acte d’écrire, acte qui, lui-même, s’inscrit dans une continuité et une évolution encore peu mesurées.

Trapezoidal SOI FinFET analog parameters` dependence on cross-section shape

The trapezium is often a better approximation for the FinFET cross-section shape, rather than the design-intended rectangle. The frequent width variations along the vertical direction, caused by the etching process that is used for fin definition, may imply in inclined sidewalls and the inclination angles can vary in a significant range. These geometric variations may cause some important changes in the device electrical characteristics. This work analyzes the influence of the FinFET sidewall inclination angle on some relevant parameters for analog design, such as threshold voltage, output conductance, transconductance, intrinsic voltage gain (A V), gate capacitance and unit-gain frequency, through 3D numeric simulation. The intrinsic gain is affected by alterations in transconductance and output conductance. The results show that both parameters depend on the shape, but in different ways. Transconductance depends mainly on the sidewall inclination angle and the fixed average fin width, whereas the output conductance depends mainly on the average fin width and is weakly dependent on the sidewall inclination angle. The simulation results also show that higher voltage gains are obtained for smaller average fin widths with inclination angles that correspond to inverted trapeziums, i.e. for shapes where the channel width is larger at the top than at the transistor base because of the higher attained transconductance. When the channel top is thinner than the base, the transconductance degradation affects the intrinsic voltage gain. The total gate capacitances also present behavior dependent on the sidewall angle, with higher values for inverted trapezium shapes and, as a consequence, lower unit-gain frequencies.

Threshold voltages of SOI MuGFETs

The multiple-gate field-effect transistor (MuGFET) is a device with a gate folded on different sides of the channel region. They are one of the most promising technological solutions to create high-performance ultra-scaled SOI CMOS. In this work, the behavior of the threshold voltage in double-gate, triple-gate and quadruple-gate SOI transistors with different channel doping concentrations is studied through three-dimensional numerical simulation. The results indicated that for double-gate transistors, one or two threshold voltages can be observed, depending on the channel doping concentration. However, in triple-gate and quadruple-gate it is possible to observe up to four threshold voltages due to the corner effect and the different doping concentration between the top and bottom of the Fin. (C) 2008 Elsevier Ltd. All rights reserved.

Improved generation lifetime model for the electrical characterization of single- and double-gate SOI nMOSFETs

This work proposes a refined technique for the extraction of the generation lifetime in single- and double-gate partially depleted SOI nMOSFETs. The model presented in this paper, based on the drain current switch-off transients, takes into account the influence of the laterally non-uniform channel doping, caused by the presence of the halo implanted region, and the amount of charge controlled by the drain and source junctions on the floating body effect when the channel length is reduced. The obtained results for single- gate (SG) devices are compared with two-dimensional numerical simulations and experimental data, extracted for devices fabricated in a 0.1 mu m SOI CMOS technology, showing excellent agreement. The improved model to determine the generation lifetime in double-gate (DG) devices beyond the considerations previously presented also consider the influence of the silicon layer thickness on the drain current transient. The extracted data through the improved model for DG devices were compared with measurements and two-dimensional numerical simulations of the SG devices also presenting a good adjustment with the channel length reduction and the same tendency with the silicon layer thickness variation.

Temperature influence on the gate-induced floating body effect parameters in fully depleted SOI nMOSFETs

The temperature influence on the gate-induced floating body effect (GIFBE) in fully depleted (FD) silicon-on-insulator (SOI) nMOSFETs is investigated, based on experimental results and two-dimensional numerical simulations. The GIFBE behavior will be evaluated taking into account the impact of carrier recombination and of the effective electric field mobility degradation on the second peak in the transconductance (gm). This floating body effect is also analyzed as a function of temperature. It is shown that the variation of the studied parameters with temperature results in a ""C"" shape of the threshold voltage corresponding with the second peak in the gm curve. (C) 2008 Elsevier Ltd. All rights reserved.

Analysis of source-follower buffers implemented with graded-channel SOI nMOSFETs operating at cryogenic temperatures

This work studies the operation of source-follower buffers implemented with standard and graded-channel (GC) fully depleted (FD) SCI nMOSFETs at low temperatures. The analysis is performed by comparing the voltage gain of buffers implemented with GC and standard SOI nMOS transistors considering devices with the same mask channel length and same effective channel length. It is shown that the use of GC devices allows for achieving improved gain in all inversion levels in a wide range of temperatures. In addition, this improvement increases as temperature is reduced. It is shown that GC transistors can provide virtually constant gain, while for standard devices, the gain departs from the maximum value depending on the temperature and inversion level imposed by the bias current and input voltage. Two-dimensional numerical simulations were performed in order to study the reasons for the enhanced gain of GC MOSFETs at low temperatures. (C) 2009 Elsevier Ltd. All rights reserved.

Advantages of graded-channel SOI nMOSFETs for application as source-follower analog buffer

In this work the performance of graded-channel (CC) SOI MOSFETs operating as source-follower buffers is presented. The experimental analysis is performed by comparing the gain and linearity of buffers implemented with CC and standard SOI MOS devices considering the same mask dimensions. It is shown that by using CC devices, buffer gain very close to the theoretical limit can be achieved, with improved linearity, while for standard devices the gain departs from the theoretical value depending on the inversion level imposed by the bias current and input voltage. Two-dimensional numerical simulations were performed in order to confirm some hypotheses proposed to explain the gain behavior observed in the experimental data. By using numerical simulations the channel length has been varied, showing that the gain of buffers implemented with CC devices remains close to the theoretical limit even when short-channel devices are adopted. It has also been shown that the length of a source-follower buffer using CC devices can be reduced by a factor of 5, in comparison with a standard Sol MOSFET, without gain loss or linearity degradation. (C) 2008 Elsevier Ltd. All rights reserved.

Forecasting regional crop production using SOI phases: an example for the Australian peanut industry

Using peanuts as an example, a generic methodology is presented to forward-estimate regional crop production and associated climatic risks based on phases of the Southern Oscillation Index (SOI). Yield fluctuations caused by a highly variable rainfall environment are of concern to peanut processing and marketing bodies. The industry could profitably use forecasts of likely production to adjust their operations strategically. Significant, physically based lag-relationships exist between an index of ocean/atmosphere El Nino/Southern Oscillation phenomenon and future rainfall in Australia and elsewhere. Combining knowledge of SOI phases in November and December with output from a dynamic simulation model allows the derivation of yield probability distributions based on historic rainfall data. This information is available shortly after planting a crop and at least 3-5 months prior to harvest. The study shows that in years when the November-December SOI phase is positive there is an 80% chance of exceeding average district yields. Conversely, in years when the November-December SOI phase is either negative or rapidly falling there is only a 5% chance of exceeding average district yields, but a 95% chance of below average yields. This information allows the industry to adjust strategically for the expected volume of production. The study shows that simulation models can enhance SOI signals contained in rainfall distributions by discriminating between useful and damaging rainfall events. The methodology can be applied to other industries and regions.

Resolu????o n?? 03, de 25 de mar??o de 2013: disciplina os crit??rios para composi????o e funcionamento do Conselho Acad??mico da ENAP

Fica institu??do o Conselho Acad??mico da ENAP, de car??ter consultivo, com a finalidade de qualificar o desenvolvimento das atividades de ensino e pesquisa da Escola, bem como aprimorar sua capacidade para responder a problemas estrat??gicos de gest??o p??blica.

Resolu????o n?? 6, de 21 de junho de 2012: estabelece no ??mbito da Escola Nacional de Administra????o P??blica - ENAP, os crit??rios e procedimentos espec??ficos de avalia????o de desempenho individual e institucional e de atribui????o da Gratifica????o de Desempenho do Plano Geral de Cargos do Poder Executivo - GDPGPE, conforme determina o art. 7?? do Decreto n?? 7.133, de 19 de mar??o de 2010

A Resolu????o n?? 6, de 21 de junho de 2012 estabelece os crit??rios e procedimentos espec??ficos de avalia????o de desempenho individual e institucional e de atribui????o da Gratifica????o de Desempenho do Plano Geral de Cargos do Poder Executivo (GDPGPE).

Resolu????o n?? 05, de 7 de junho de 2011: estabelece crit??rios e procedimentos de avalia????o de desempenho individual e institucional da Gratifica????o de Desempenho do Plano Geral de Cargos do Poder Executivo ??? GDPGPE, no ??mbito da Escola Nacional de Administra????o P??blica ??? ENAP.

A Resolu????o n?? 6, de 07 de junho de 2011, estabelece crit??rios e procedimentos de avalia????o de desempenho individual e institucional da Gratifica????o de Desempenho do Plano Geral de Cargos do Poder Executivo ??? GDPGPE, no ??mbito da Escola Nacional de Administra????o P??blica ??? ENAP.

Resolu????o n?? 7, de 7 de junho de 2011: estabelece crit??rios e procedimentos de avalia????o de desempenho individual e institucional da Gratifica????o de Desempenho do Plano Geral de Cargos do Poder Executivo ??? GDPGPE, no ??mbito da Escola Nacional de Administra????o P??blica ??? ENAP

A Resolu????o n?? 7, de 7 de junho de 2011 disciplina a avalia????o de desempenho para Est??gio Probat??rio.

Ranking das prefeituras da região Sul do Brasil: uma avaliação a partir de critérios estabelecidos na Lei de Acesso à Informação

A Lei de Acesso à Informação representa um passo fundamental rumo à consolidação da democracia brasileira. Entre seus preceitos, está a obrigação da disposição de informações na rede sobre a estrutura, funcionamento e prestação de contas dos órgãos/entidades da administração direta e indireta e de todos aqueles que recebem subvenção pública. Considerando sua relevância no contexto atual, este artigo busca, a partir de uma pesquisa mista, analisar como a referida lei está sendo implementada pelas prefeituras da região Sul do país. A partir dessa análise, foi possível mapear os efeitos iniciais da aplicação da lei durante o seu primeiro ano de vigência bem como estabelecer um ranking dos sites, tendo em vista o cumprimento das disposições nela estabelecidas.

Tradições orais como subsídio para escritas de cena: das tradições orais à artes performativas

Projeto para obtenção do Grau de Mestre em Teatro. Especialização em Artes Performativas — Escritas de Cena.