A imagem em meditação - Glitterbug e as formas de arquivamento no cinema de Derek Jarman

Este trabalho consiste em um estudo sobre a imagem, sobretudo em sua relação com a experiência do tempo e com a memória. Tendo por objeto central o filme Glitterburg, do diretor inglês Derek Jarman, esta dissertação procura pensar a constituição da imagem a partir de três processos distintos de arquivamento, sendo eles: o arquivamento da luz, o do tempo e o de si. A prática arquivistica será considerada, desse ponto de vista, não só como constituída por um conjunto de procedimentos (cortar, fixar, organizar, montar, etc), mas como uma operação que se encontra ligada a toda uma reflexão em torno da memória, da imagem, do tempo, da escrita de si e da morte. É, portanto, num esforço simultâneo de pensar tanto a dimensão processual quanto reflexiva da prática do arquivamento implicada nesse filme que esse estudo se desenvolve. Constituindo-se, nesse sentido, como trabalho geminado de análise focada numa obra cinematográfica particular e de conceituação do que se procura definir aqui, com base no cinema de Jarman, como imagem-arquivo.

La présence de l'écrit dans la vie de jeunes adultes non diplômés en situation de précarité

La situation precaire de jeunes adultes non diplomés préoccupe les acteurs sociaux et des programmes soutiennent leur insertion. Ces programmes, à l'image de la société, font un usage important de l'écrit. Pourtant, des recherches indiquent que du personnel intervenant auprs de ces jeunes adultes croient qu'ils n'aiment pas lire et écrire et n'ont pas ce genre d'activités. La question de recherche est: Quelle est la place de l'écrit dans la vie de jeunes adultes non diplômés en situation de précarité? Ce mémoire s'inscrit dans un projet de l'équipe de recherche sur les transitions et l'apprentissage avec un échantillon de 45 jeunes adultes fréquentant un carrefour jeunesse-emploi. La méthodologie est mixte à dominante qualitative. Les résultats permettent d'affirmer que l'écrit a une place significative dans des moments importants de ces jeunes adultes, que la présence de l'écrit est souvent existentielle permettant la rencontre de soi et la rencontre des autres.

Écrire dans la classe de français à la FGA : processus créateur, motivation et culture de l'écrit

Dans notre recherche-intervention, nous nous sommes questionnée sur les façons d’instaurer motivation et culture de l’écrit dans la classe de français, chez les élèves du présecondaire à la cinquième secondaire, inscrits à la Formation Générale aux Adultes (FGA) au Centre Marchand de la Commission scolaire de la Rivière-du-Nord, à travers un processus créateur authentique et signifiant qui modifie les rapports parfois difficiles entre les élèves et l’écrit. Tout en tenant compte des caractéristiques des élèves concernés, nous avons abordé, entre autres, la créativité, le rapport entre soi, l’autre et le monde grâce à l’écriture libre, les interactions entre la lecture, l’écriture et l’oral, la motivation, le savoir-écrire en tant que compétence, le plaisir du texte et la démocratisation de l’écrit. Proposant une vision renouvelée de l’écriture, nous avons inclus dans nos classes des activités qui rompaient avec l’enseignement traditionnel du français (les ateliers d’écriture) et des outils qui favorisaient la continuité des tâches et l’autoévaluation (le portfolio de présentation, le recueil et la bande-annonce). Ces tâches nous ont permis d’instaurer une culture de l’écrit et d’agir sur la motivation des élèves. Nous en sommes arrivée à produire une analyse critique des modes d’intervention à privilégier pour que le processus créateur occupe la place qui lui revient dans la classe de français et pour que l’engagement des élèves, dans l’acte d’écrire, devienne plus signifiant et plus authentique, donc, conséquemment, plus motivant. Bref, conformément à l’esprit du renouveau pédagogique qui a fait son entrée au secondaire en 2005, nous souhaitons que notre recherche aide les enseignants de français à réévaluer l’importance du processus créateur, lequel fait partie intégrante de l’acte d’écrire, acte qui, lui-même, s’inscrit dans une continuité et une évolution encore peu mesurées.

Evaluation of Interconnect Fabrics for an Embedded MPSoC in 28 nm FD-SOI

Embedded many-core architectures contain dozens to hundreds of CPU cores that are connected via a highly scalable NoC interconnect. Our Multiprocessor-System-on-Chip CoreVAMPSoC combines the advantages of tightly coupled bus-based communication with the scalability of NoC approaches by adding a CPU cluster as an additional level of hierarchy. In this work, we analyze different cluster interconnect implementations with 8 to 32 CPUs and compare them in terms of resource requirements and performance to hierarchical NoCs approaches. Using 28nm FD-SOI technology the area requirement for 32 CPUs and AXI crossbar is 5.59mm2 including 23.61% for the interconnect at a clock frequency of 830 MHz. In comparison, a hierarchical MPSoC with 4 CPU cluster and 8 CPUs in each cluster requires only 4.83mm2 including 11.61% for the interconnect. To evaluate the performance, we use a compiler for streaming applications to map programs to the different MPSoC configurations. We use this approach for a design-space exploration to find the most efficient architecture and partitioning for an application.

Electron Mean Energy, Secondary Ionization Coefficients And (E/P)Crit In Binary-Mixtures Of Sf6-N2 And Ccl2f2-N2

Measurements of the ratio of diffusion coefficient to mobility (D/ mu ) of electrons in SF6-N2 and CCl2F2-N2 mixtures over the range 80degrees C) are reported. Values of (E/p)c.mix (the critical E/p of the mixture, where alpha = eta ), and the electron mean energies epsilon c.mix corresponding to (E/p)c.mix, are found to vary with the percentage of the electronegative gas in the mixture (F) according to the following relationship: (E/p)c.mix=(E/p)c.N(2)+((E/p)c.A-(E/p)c.N(2)) (1-exp(- beta F/100-F)) and epsilon c.mix= epsilon c.N(2)+( epsilon c.A- epsilon c.N(2)) (1-exp(- beta F/100-F)) where A refers to the attaching gas, either SF6 or CCl2F2 and beta is a constant, equal to 2.43 for SF6 mixtures and 5.12 for CCl2F2 mixtures. In the present study, it has been possible to show that beta is indeed to a factor of synergism. Estimated gamma values (secondary ionisation coefficients) did not show any significant variation with F for F<50.

Koko talo soi : Klemetti-Opisto suomalaisen musiikkikulttuurin kehittäjänä 1953-1968

This study aims to examine the operations and significance of the Klemetti Institute (Klemetti-Opisto) as a developer of Finnish music culture from 1953 to 1968 during the term of office of the Institute s founder and first director, Arvo Vainio. The Klemetti Institute was originally established as a choir institute, but soon expanded to offer a wide range of music courses. In addition to providing courses for choir leaders and singers, the Institute began its orchestral activities as early as the mid-1950s. Other courses included ear training seminars as well as courses for young people s music instructors and in playing the kantele (a Finnish string instrument) and solo singing. More than 20 types of courses were offered over the 16-year period. The Klemetti Institute s courses were incorporated into the folk high school courses offered by the Orivesi Institute (Oriveden Opisto) and were organised during the summer months of June and July. In addition to funding based on the Folk High School Act, financial assistance was obtained from various foundations and funds, such as the Wihuri Foundation. This study is linked to the context of historical research. I examine the Klemetti Institute s operations chronologically, classifying instruction into different course types, and analyse concert activities primarily in the section on the Institute s student union. The source material includes the Klemetti Institute archives, which consist of Arvo Vainio s correspondence, student applications, register books and cards, journals and student lists, course albums and nearly all issues of the Klemettiläinen bulletin. In addition, I have used focused interviews and essays to obtain extensive data from students and teachers. I concentrate on primary school teachers, who accounted for the majority of course participants. A total of more than 2,300 people participated in the courses, nearly half of whom took courses during at least two summers. Primary school teachers accounted for 50% to 70% of the participants in most courses and constituted an even larger share of participants in some courses, such as the music instructor course. The Klemetti Institute contributed to the expansion throughout Finland of a new ideal for choral tone. This involved delicate singing which strives for tonal purity and expressiveness. Chamber choirs had been virtually unheard of in Finland, but the Klemetti Institute Chamber Choir popularised them. Chamber choirs are characterised by an extensive singing repertoire ranging from the Middle Ages to the present. As the name suggests, chamber choirs were originally rather small mixed choirs. Delicate singing meant the avoidance of extensive vibrato techniques and strong, heavy forte sounds, which had previously been typical of Finnish choirs. Those opposing and shunning this new manner of singing called it ghost singing . The Klemetti Institute s teachers included Finland s most prominent pedagogues and artists. As the focused essays, or reminiscences as I call them, show, their significance for the students was central. I examine extensively the Klemetti Institute s enthusiastic atmosphere, which during the early years was characterised by what some writers described as a hunger for music . In addition to distributing a new tonal ideal and choir repertoire, the Klemetti Institute also distributed new methods of music education, thus affecting the music teaching of Finnish primary schools, in particular. The Orff approach, which included various instruments, became well known, although some of Orff s ideas, such as improvisation and physical exercise, were initially unfamiliar. More important than the Orff approach was the in-depth teaching at the Klemetti Institute of the Hungarian ear training method known as the Kodály method. Many course participants were among those launching specialist music classes in schools, and the method became the foundation for music teaching in many such schools. The Klemetti Institute was also a pioneer in organising orchestra camps for young people. The Klemetti Institute promoted Finnish music culture and played an important role in the continuing music education of primary school teachers. Keywords: adult education, Grundtvigian philosophy, popular enlightenment, Klemetti Institute, Kodály method, choir singing, choir conducting, music history, music education, music culture, music camp, Orff approach, Orff-Schulwerk, Orivesi Institute, instrument teaching, free popular education, communality, solo singing, voice production

Threshold voltage model for accumulation mode polycrystalline SOI MOSFETs and comparisons with experimental results

In this paper, a simple but accurate semi analytical charge sheet model is presented for threshold voltage of accumulation mode polycrystalline silicon on insulator (PSOI) MOSFETs. In this model, we define the threshold voltage (V-T) of the polysilicon accumulation mode MOSFET as the gate voltage required to raise the surface potential (phi(s)) to a value phi(sT) necessary to overcome the charge trapping in the grain boundary and to create channel accumulation charge that is equal to the channel accumulation charge available in the case of single crystal silicon accumulation mode MOSFET at that phi(sT). The correctness of the model is demonstrated by comparing the theoretically estimated values of threshold voltage with the experimentally measured threshold voltages on the accumulation mode PSOI MOSFETs fabricated in the laboratory using LPCVD polysilicon layers doped with boron to achieve dopant densities in the range 3.3 x 10(-15)-5 x 10(17)/cm(3). Further, it is shown that the threshold voltage values of accumulation mode PSOI MOSFETs predicted by the present model match very closely with the experimental results, better than those obtained with the models previously reported in the literature. (C) 2012 Elsevier B.V. All rights reserved.

SOI strip waveguide microring resonator for homogeneous biosensing

We report the simulation and analytical results obtained for homogenous or bulk sensing of protein on Siliconon- insulator strip waveguide based microring resonator. The radii of the rings considered are 5 μm and 20 μm; the waveguide dimensions are 300 × 300 nm. A gap of (i) 200 nm and (ii) 300 nm exists between the ring and the bus waveguide. The biomaterial is uniformly distributed over a thickness which exceeds the evanescent field penetration depth of 150 nm. The sensitivities of the resonators are 32.5 nm/RIU and 17.5 nm/RIU (RIU - Refractive index unit) respectively.

Effect of FIB milling on MEMS SOI cantilevers

Stress induced by Focused Ion Beam (FIB) milling of cantilevers fabricated on silicon-on-insulator (SOI) wafer has been studied. Milling induces stress gradients ranging from -10MPa/μm to -120MPa/μm, depending on the location of cantilevers from the point of milling. Simulations were done to estimate the stress in the milled cantilevers.

Stress Engineering using Si3N4 for stiction free release of SOI beams

We report on the effect of thin silicon nitride (Si3N4) induced tensile stress on the structural release of 200nm thick SOI beam, in the surface micro-machining process. A thin (20nm / 100nm) LPCVD grown Si3N4 is shown to significantly enhance the yield of released beam in wet release technique. This is especially prominent with increase in beam length, where the beams have higher tendency for stiction. We attribute this yield enhancement to the nitride induced tensile stress, as verified by buckling tendency and resonance frequency data obtained from optical profilometry and laser doppler vibrometry.

Partial soi power LDMOS with a variable low-kappa; Dielectric buried layer and a buried P layer

A power LDMOS on partial silicon on insulator (PSOI) with a variable low-κ dielectric (VLKD) buried layer and a buried p (BP) layer is proposed (VLKD BPSOI). At a low κ value, the electric field strength in the buried dielectric (EI) is enhanced, and a Si window makes the substrate share the vertical voltage drop, leading to a high vertical breakdown voltage (BV). Moreover, three interface field peaks are introduced by the BP, the Si window, and the VLKD, which modulate the fields in the SOI layer, the VLKD layer, and the substrate; consequently, a high BV is obtained. Furthermore, the BP reduces the specific on-resistance (Ron), and the Si window alleviates the self-heating effect (SHE). The BV for VLKD BPSOI is enhanced by 34.5%, and Ron is decreased by 26.6%, compared with those for the conventional PSOI, and VLKD BPSOI also maintains a low SHE. © 2006 IEEE.

3D thermo-electro-mechanical simulations of gas sensors based on SOI membranes

3D thermo-electro-mechanical device simulations are presented of a novel fully CMOS-compatible MOSFET gas sensor operating in a SOI membrane. A comprehensive stress analysis of a Si-SiO2-based multilayer membrane has been performed to ensure a high degree of mechanical reliability at a high operating temperature (e.g. up to 400°C). Moreover, optimisation of the layout dimensions of the SOI membrane, in particular the aspect ratio between the membrane length and membrane thickness, has been carried out to find the best trade-off between minimal device power consumption and acceptable mechanical stress.

Design and coupled-effect simulations of CMOS micro gas-sensors built on SOI thin membranes

This paper describes coupled-effect simulations of smart micro gas-sensors based on standard BiCMOS technology. The smart sensor features very low power consumption, high sensitivity and potential low fabrication cost achieved through full CMOS integration. For the first time the micro heaters are made of active CMOS elements (i.e. MOSFET transistors) and embedded in a thin SOI membrane consisting of Si and SiO2 thin layers. Micro gas-sensors such as chemoresistive, microcalorimeteric and Pd/polymer gate FET sensors can be made using this technology. Full numerical analyses including 3D electro-thermo-mechanical simulations, in particular stress and deflection studies on the SOI membranes are presented. The transducer circuit design and the post-CMOS fabrication process, which includes single sided back-etching, are also reported.