957 resultados para TGM concentration in air
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P>An 83-day growth trial was conducted using a flow-through system to examine the effects of different dietary iron levels on growth and hepatic iron concentration in juvenile gibel carp (Carassius auratus gibelio). Six purified diets supplemented with different levels of iron (0, 10, 30, 60, 100 and 200 mg kg(-1)) (as ferrous sulfate) were fed to triplicate groups of fish (initial weight 2.12 +/- 0.00 g per fish). The results showed that the addition of iron to the basal diet did not significantly affect the specific growth rate (SGR), feed efficiency (FE), survival, red blood cell amount (RBC), hemoglobin content (Hb), mean corpuscular volume (MCV), mean corpuscular hemoglobin (MCH) or mean corpuscular hemoglobin concentration (MCHC). Hepatic iron concentration and hematocrit (Hct) were significantly influenced by dietary iron level (P < 0.05). On the basis of the iron concentration for the maintenance of optimum hepatic iron concentration and Hct, it was concluded that the dietary iron concentration of juvenile gibel carp should be not less than 202 mg Fe kg(-1) diet.
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The submersed macrophyte, Vallisneria natans L., was cultured in laboratory with NH (4) (+) -enriched tap water (1 mg L-1 NH4-N) for 2 months and the stressful effects of high ammonium (NH (4) (+) ) concentrations in the water column on this species was evaluated. The plant growth was severely inhibited by the NH (4) (+) supplement in the water column. The plant carbon and nitrogen metabolisms were disturbed by the NH (4) (+) supplement as indicated by the accumulation of free amino acids and the depletion of soluble carbohydrates in the plant tissues. The results suggested that high NH (4) (+) concentrations in the water column may hamper the restoration of submersed vegetation in eutrophic lakes.
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We measured the carrier concentration distribution of gradient-doped GaAs/GqAlAs epilayers grown by molecular beam epitaxy before and after annealing at 600 degrees C, using electrochemical capacitance voltage profiling, to investigate the internal variation of transmission-mode GaAs photocathodes arising from the annealing process. The results show that the carrier concentration increased after annealing. As a result, the total band-bending energy in the gradient-doped GaAs emission layer increased by 25.24% after annealing, which improves the pbotoexcited electron movement toward the surface. On the other hand, the annealing process resulted in a worse carrier concentration discrepancy between the GaAs and the GaAlAs, which causes a lower back interface potential barrier, decreasing the amount of high-energy photoelectrons. (C) 2009 Optical Society of America
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Argon gas, as a protective environment and carrier of latent heat, has an important effect on the temperature distribution in crystals and melts. Numeric simulation is a potent tool for solving engineering problems. In this paper, the relationship between argon gas flow and oxygen concentration in silicon crystals was studied systematically. A flowing stream of argon gas is described by numeric simulation for the first time. Therefore, the results of experiments can be explained, and the optimum argon flow with the lowest oxygen concentration can be achieved. (C) 2002 Elsevier Science B.V. All rights reserved.
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CdS nanoparticies were prepared in air and their stability by air annealing was studied. A small change in crystal structure and particle size was observed by air annealing, but a rapid reduction in fluorescence was found. Through investigation, it is revealed that it is the surface change or reconstruction rather than the variation of the size or structure that decreases the fluorescence. The emission of the particles consists with two peaks which are dependent on the excitation energy. The two peaks are considered to be arisen from "two" different sizes of nanoparticles and may be explained in terms of selectively excited photoluminescence. Finally we discuss why the discrete state of nanoparticles are able to be resolved in the photoluminescence excitation spectrum, but could not be differentiated in the absorption spectrum.
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The Raman scattering study of vibrational modes and hole concentration in a ferromagnetic semiconductor Ga1-xMnxSb grown by Mn ion implantation, deposition and post-annealing has been presented. The experiments are performed both in implanted and unimplanted regions before and after etching the samples. The Raman spectra measured from the unimplanted region show only GaSb-like phonon modes. On the other hand, the spectra measured from the implanted region show additional phonon modes approximately at 115, 152, 269, 437 and 659 cm(-1). The experimental results demonstrate that the extra modes are associated with surface defects, crystal disorder and blackish layer that is formed due to Mn ion implantation, deposition and annealing processes. Furthermore, we have determined the hole concentration as a function of laser probing position by modeling the Raman spectra using coupled mode theory. The contributions of GaSb-like phonon modes and coupled LO-phonon plasmon mode are taken into consideration in the model. The hole-concentration-dependent CLOPM is resolved in the spectra measured from the implanted and nearby implanted regions. The hole concentrations determined by Raman scattering are found to be in good agreement with those measured by the electrochemical capacitance-voltage technique.
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The robustness and prolongation of multiple filamentation (MF) for femtosecond laser propagation in air are investigated experimentally and numerically. It is shown that the number, pattern, propagation distance, and spatial stability of MF can be controlled by a variable-aperture on-axis pinhole. The random MF pattern can be optimized to a deterministic pattern. In our numerical simulations, we configured double filaments to principlly simulate the experimental MF interactions. It is experimentally and numerically demonstrated that the pinhole can reduce the modulational instability of MF and is favorable for a more stable MF evolution. (c) 2007 Optical Society of America.
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于2010-11-23批量导入
Resumo:
Argon gas, as a protective environment and carrier of latent heat, has an important effect on the temperature distribution in crystals and melts. Numeric simulation is a potent tool for solving engineering problems. In this paper, the relationship between argon gas flow and oxygen concentration in silicon crystals was studied systematically. A flowing stream of argon gas is described by numeric simulation for the first time. Therefore, the results of experiments can be explained, and the optimum argon flow with the lowest oxygen concentration can be achieved. (C) 2002 Elsevier Science B.V. All rights reserved.
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Plasma in the air is successfully induced by a free-oscillated Nd:YAG laser pulse with a peak power of 10(2-3) W. The initial free electrons for the cascade breakdown process are from the ablated particles from the surface of a heated coal target, likewise induced by the focused laser beam. The laser field compensates the energy loss of the plasma when the corresponding temperature and the images are investigated by fitting the experimental spectra of B-2 Sigma(+) -> X-2 Sigma(+) band of CN radicals in the plasma with the simulated spectra and a 4-frame CCD camera. The electron density is estimated using a simplified Kramer formula. As this interaction occurs in a gas mixture of hydrogen and oxygen, the formation and development of the plasma are weakened or restrained due to the chaining branch reaction in which the OH radicals are accumulated and the laser energy is consumed. Moreover, this laser ignition will initiate the combustion or explosion process of combustible gas and the minimum ignition energy is measured at different initial pressures. The differences in the experimental results compared to those induced by a nanosecond Q-switched laser pulse with a peak power of 10(6-8) W are also discussed. (C) 2009 Professor T. Nejat Veziroglu. Published by Elsevier Ltd. All rights reserved.