Hydrogen-Atom Transfer Photochemistry of Tetrakis(µ-pyrophosphito)diplatinate(II)

In many senses, the hydrogen-atom transfer reactions observed with the triplet excited state of pyrophosphito-bridged platinum(II) dimers resemble the reactions of organic ketone nπ* states. The first two chapters describe our attempts to understand the reactivity differences between these two chromophores. Reactivity of the metal dimers is strongly regulated by the detailed nature of the ligands that ring the axial site, the hydrogen-abstraction center. A hydrogen-bonded network linking the ligands facilitates H-atom transfer quenching with alcohols through the formation of a hydrogen-bonded complex between the alcohol and a dimer. For substrates of equal C-H bond strength that lack a hydroxyl group (e.g., benzyl hydrocarbons), the quenching rate is several orders of magnitude slower.

The shape and size of the axial site, as determined by the ligands, also discriminate among quenchers by their steric characteristics. Very small quenchers quench slowly because of high entropies of activation, while very large ones have large enthalpic barriers. The two effects find a balance with quenchers of "just the right size."

The third chapter discusses the design of a mass spectrometer that uses positron annihilation to ionize neutral molecules. The mass spectrometer creates positron-molecule adducts whose annihilation produces fragmentation products that may yield information on the bonding of positrons in such complexes.

A study of W boson properties with four-jet W^+W^- events at LEP

In this thesis I present a study of W pair production in e⁺e^- annihilation using fully hadronic W⁺W^- events. Data collected by the L3 detector at LEP in 1996-1998, at collision center-of-mass energies between 161 and 189 GeV, was used in my analysis.

Analysis of the total and differential W⁺W^- cross sections with the resulting sample of 1,932 W⁺W^- → qqqq event candidates allowed me to make precision measurements of a number of properties of the W boson. I combined my measurements with those using other W⁺W^- final states to obtain stringent constraints on the W boson's couplings to fermions, other gauge bosons, and scalar Higgs field by measuring the total e⁺e^- → W⁺W^- cross section and its energy dependence

σ(e⁺e^- → W⁺W^-) =

{2.68^+0.98_-0.67(stat.)± 0.14(syst.) pb, √s = 161.34 GeV

{12.04^+1.38_-1.29(stat.)± 0.23(syst.) pb, √s = 172.13 GeV

{16.45 ± 0.67(stat.) ± 0.26(syst.) pb, √s = 182.68 GeV

{16.28 ± 0.38(stat.) ± 0.26(syst.) pb, √s = 188.64 GeV

the fraction of W bosons decaying into hadrons

invisible non-SM width of the W boson

the mass of the W boson

the total width of the W boson

the anomalous triple gauge boson couplings of the W

Δg^Z₁ = 0.16^+0.13_-0.20(stat.) ± 0.11(syst.)

Δk_γ = 0.26^+0.24_-0.33(stat.) ± 0.16(syst.)

λ_γ = 0.18^+0.13_-0.20(stat.) ± 0.11(syst.)

No significant deviations from Standard Model predictions were found in any of the measurements.

Radiative tau production and decay

A study of the muon decay channel of the τ lepton with the presence of a photon has been carried out to verify theoretical predictions for the production rate of e⁺e^- → τ⁺τ^-γ and for the branching ratio of τ^- → ν_τ µ^-ν_µγ. Included in this study is the first direct measurement of radiative tau decay. Using e⁺e^- annihilation data taken at 29 GeV center-of-mass energy with the Mark II detector, we find the ratio of the measured τ^- → ν_τ µ^-ν_µγ branching fraction to the expected value from QED to be 1.03 ± 0.42. The ratio of measured-to-predicted number of events from radiative T production, e⁺e^- → τ⁺τ^-γ, where one of the τ's decay to μνν is found to be 0.91 ± 0.20. We have not seen an indication of anomalous behavior in radiative tau events.

I. Current commutators in quantum electrodynamics. II. Electromagnetic mass differences of the pseudoscalar meson and baryon octets

This thesis is in two parts. In the first section, the operator structure of the singular terms in the equal-time commutator of space and time components of the electromagnetic current is investigated in perturbation theory by establishing a connection with Feynman diagrams. It is made very plausible that the singular term is a c number. Some remarks are made about the same problem in the electrodynamics of a spinless particle.

In the second part, an SU(3) symmetric multi-channel calculation of the electromagnetic mass differences in the pseudoscalar meson and baryon octets is carried out with an attempt to include some of the physics of the crossed (pair annihilation) channel along the lines of the recent work by Ball and Zachariasen. The importance of the tensor meson Regge trajectories is emphasized. The agreement with experiment is poor for the isospin one mass differences, but excellent for those with isospin two.

I. A study of the dynamics of triplet excitons in molecular crystals. II. An investigation of delayed light emission from Chlorella pyrenoidosa

I. PREAMBLE AND SCOPE

Brief introductory remarks, together with a definition of the scope of the material discussed in the thesis, are given.

II. A STUDY OF THE DYNAMICS OF TRIPLET EXCITONS IN MOLECULAR CRYSTALS

Phosphorescence spectra of pure crystalline naphthalene at room temperature and at 77˚ K are presented. The lifetime of the lowest triplet ³B_1u state of the crystal is determined from measurements of the time-dependence of the phosphorescence decay after termination of the excitation light. The fact that this lifetime is considerably shorter in the pure crystal at room temperature than in isotopic mixed crystals at 4.2˚ K is discussed, with special importance being attached to the mobility of triplet excitons in the pure crystal.

Excitation spectra of the delayed fluorescence and phosphorescence from crystalline naphthalene and anthracene are also presented. The equation governing the time- and spatial-dependence of the triplet exciton concentration in the crystal is discussed, along with several approximate equations obtained from the general equation under certain simplifying assumptions. The influence of triplet exciton diffusion on the observed excitation spectra and the possibility of using the latter to investigate the former is also considered. Calculations of the delayed fluorescence and phosphorescence excitation spectra of crystalline naphthalene are described.

A search for absorption of additional light quanta by triplet excitons in naphthalene and anthracene crystals failed to produce any evidence for the phenomenon. This apparent absence of triplet-triplet absorption in pure crystals is attributed to a low steady-state triplet concentration, due to processes like triplet-triplet annihilation, resulting in an absorption too weak to be detected with the apparatus used in the experiments. A comparison of triplet-triplet absorption by naphthalene in a glass at 77˚ K with that by naphthalene-h₈ in naphthalene-d₈ at 4.2˚ K is given. A broad absorption in the isotopic mixed crystal triplet-triplet spectrum has been tentatively interpreted in terms of coupling between the guest ³B_1u state and the conduction band and charge-transfer states of the host crystal.

III. AN INVESTIGATION OF DELAYED LIGHT EMISSION FROM Chlorella Pyrenoidosa

An apparatus capable of measuring emission lifetimes in the range 5 X 10^-9 sec to 6 X 10^-3 sec is described in detail. A cw argon ion laser beam, interrupted periodically by means of an electro-optic shutter, serves as the excitation source. Rapid sampling techniques coupled with signal averaging and digital data acquisition comprise the sensitive detection and readout portion of the apparatus. The capabilities of the equipment are adequately demonstrated by the results of a determination of the fluorescence lifetime of 5, 6, 11, 12-tetraphenyl-naphthacene in benzene solution at room temperature. Details of numerical methods used in the final data reduction are also described.

The results of preliminary measurements of delayed light emission from Chlorella Pyrenoidosa in the range 10^-3 sec to 1 sec are presented. Effects on the emission of an inhibitor and of variations in the excitation light intensity have been investigated. Kinetic analysis of the emission decay curves obtained under these various experimental conditions indicate that in the millisecond-to-second time interval the decay is adequately described by the sum of two first-order decay processes. The values of the time constants of these processes appear to be sensitive both to added inhibitor and to excitation light intensity.

I. Baryon-antibaryon phase transition at high temperature. II. Inclusive virtual photon-hadron reactions in the parton model

Part I

Present experimental data on nucleon-antinucleon scattering allow a study of the possibility of a phase transition in a nucleon-antinucleon gas at high temperature. Estimates can be made of the general behavior of the elastic phase shifts without resorting to theoretical derivation. A phase transition which separates nucleons from antinucleons is found at about 280 MeV in the approximation of the second virial coefficient to the free energy of the gas.

Part II

The parton model is used to derive scaling laws for the hadrons observed in deep inelastic electron-nucleon scattering which lie in the fragmentation region of the virtual photon. Scaling relations are obtained in the Bjorken and Regge regions. It is proposed that the distribution functions become independent of both q² and ν where the Bjorken and Regge regions overlap. The quark density functions are discussed in the limit x→1 for the nucleon octet and the pseudoscalar mesons. Under certain plausible assumptions it is found that only one or two quarks of the six types of quarks and antiquarks have an appreciable density function in the limit x→1. This has implications for the quark fragmentation functions near the large momentum boundary of their fragmentation region. These results are used to propose a method of measuring the proton and neutron quark density functions for all x by making measurements on inclusively produced hadrons in electroproduction only. Implications are also discussed for the hadrons produced in electron-positron annihilation.

The statistical bootstrap model

A review is presented of the statistical bootstrap model of Hagedorn and Frautschi. This model is an attempt to apply the methods of statistical mechanics in high-energy physics, while treating all hadron states (stable or unstable) on an equal footing. A statistical calculation of the resonance spectrum on this basis leads to an exponentially rising level density ρ(m) ~ cm^-3 e^βom at high masses.

In the present work, explicit formulae are given for the asymptotic dependence of the level density on quantum numbers, in various cases. Hamer and Frautschi's model for a realistic hadron spectrum is described.

A statistical model for hadron reactions is then put forward, analogous to the Bohr compound nucleus model in nuclear physics, which makes use of this level density. Some general features of resonance decay are predicted. The model is applied to the process of NN annihilation at rest with overall success, and explains the high final state pion multiplicity, together with the low individual branching ratios into two-body final states, which are characteristic of the process. For more general reactions, the model needs modification to take account of correlation effects. Nevertheless it is capable of explaining the phenomenon of limited transverse momenta, and the exponential decrease in the production frequency of heavy particles with their mass, as shown by Hagedorn. Frautschi's results on "Ericson fluctuations" in hadron physics are outlined briefly. The value of β_o required in all these applications is consistently around [120 MeV]^-1 corresponding to a "resonance volume" whose radius is very close to ƛ_π. The construction of a "multiperipheral cluster model" for high-energy collisions is advocated.

Uncovering the role of free volume in biomaterials and biological matter

134 p.

A discrete dislocation analysis of fatigue crack growth

Cyclic loading of a plane strain mode I crack under small scale yielding is analyzed using discrete dislocation dynamics. The dislocations are all of edge character, and are modeled as line singularities in an elastic solid. At each stage of loading, superposition is used to represent the solution in terms of solutions for edge dislocations in a half-space and a non-singular complementary solution that enforces the boundary conditions, which is obtained from a linear elastic, finite element solution. The lattice resistance to dislocation motion, dislocation nucleation, dislocation interaction with obstacles and dislocation annihilation are incorporated into the formulation through a set of constitutive rules. An irreversible relation between the opening traction and the displacement jump across a cohesive surface ahead of the initial crack tip is also specified, which permits crack growth to emerge naturally. It is found that crack growth can occur under cyclic loading conditions even when the peak stress intensity factor is smaller than the stress intensity required for crack growth under monotonic loading conditions; however below a certain threshold value of ΔKI no crack growth was seen.

Discrete dislocation plasticity analysis of crack-tip fields in polycrystalline materials

Small scale yielding around a mode I crack is analysed using polycrystalline discrete dislocation plasticity. Plane strain analyses are carried out with the dislocations all of edge character and modelled as line singularities in a linear elastic material. The lattice resistance to dislocation motion, nucleation, interaction with obstacles and annihilation are incorporated through a set of constitutive rules. Grain boundaries are modelled as impenetrable to dislocations. The polycrystalline material is taken to consist of two types of square grains, one of which has a bcc-like orientation and the other an fcc-like orientation. For both orientations there are three active slip systems. Alternating rows, alternating columns and a checker-board-like arrangement of the grains is used to construct the polycrystalline materials. Consistent with the increasing yield strength of the polycrystalline material with decreasing grain size, the calculations predict a decrease in both the plastic zone size and the crack-tip opening displacement for a given applied mode I stress intensity factor. Furthermore, slip-band and kink-band formation is inhibited by all grain arrangements and, with decreasing grain size, the stress and strain distributions more closely resemble the HRR fields with the crack-tip opening approximately inversely proportional to the yield strength of the polycrystalline materials. The calculations predict a reduction in fracture toughness with decreasing grain size associated with the grain boundaries acting as effective barriers to dislocation motion.

Tensile response of passivated films with climb-assisted dislocation glide

The tensile response of single crystal films passivated on two sides is analysed using climb enabled discrete dislocation plasticity. Plastic deformation is modelled through the motion of edge dislocations in an elastic solid with a lattice resistance to dislocation motion, dislocation nucleation, dislocation interaction with obstacles and dislocation annihilation incorporated through a set of constitutive rules. The dislocation motion in the films is by glide-only or by climb-assisted glide whereas in the surface passivation layers dislocation motion occurs by glide-only and penalized by a friction stress. For realistic values of the friction stress, the size dependence of the flow strength of the oxidised films was mainly a geometrical effect resulting from the fact that the ratio of the oxide layer thickness to film thickness increases with decreasing film thickness. However, if the passivation layer was modelled as impenetrable, i.e. an infinite friction stress, the plastic hardening rate of the films increases with decreasing film thickness even for geometrically self-similar specimens. This size dependence is an intrinsic material size effect that occurs because the dislocation pile-up lengths become on the order of the film thickness. Counter-intuitively, the films have a higher flow strength when dislocation motion is driven by climb-assisted glide compared to the case when dislocation motion is glide-only. This occurs because dislocation climb breaks up the dislocation pile-ups that aid dislocations to penetrate the passivation layers. The results also show that the Bauschinger effect in passivated thin films is stronger when dislocation motion is climb-assisted compared to films wherein dislocation motion is by glide-only. © 2012 Elsevier Ltd.

Low temperature annealing effects on the structure and optical properties of ZnO films grown by pulsed laser deposition

ZnO thin films were deposited on glass substrates at room temperature (RT) similar to 500 degrees C by pulsed laser deposition (PLD) technique and then were annealed at 150-450 degrees C in air. The effects of annealing temperature on the microstructure and optical properties of the thin films deposited at each substrate temperature were investigated by XRD, SEM, transmittance spectra, and photoluminescence (PL). The results showed that the c-axis orientation of ZnO thin films was not destroyed by annealing treatments: the grain size increased and stress relaxed for the films deposited at 200-500 degrees C, and thin films densified for the films deposited at RT with increasing annealing temperature. The transmittance spectra indicated that E-g of thin films showed a decreased trend with annealing temperature. From the PL measurements, there was a general trend, that is UV emission enhanced with lower annealing temperature and disappeared at higher annealing temperature for the films deposited at 200-500 degrees C; no UV emission was observed for the films deposited at RT regardless of annealing treatment. Improvement of grain size and stoichiometric ratio with annealing temperature can be attributed to the enhancement of UV emission, but the adsorbed oxygen species on the surface and grain boundary of films are thought to contribute the annihilation of UV emission. It seems that annealing at lower temperature in air is an effective method to improve the UV emission for thin films deposited on glass substrate at substrate temperature above RT.

Effects of AlGaN/AlN Stacked Interlayers on GaN Growth on Si (111)

We report the growth of high quality and crack-free GaN film on Si (111) substrate using Al0.2Ga0.8N/AlN stacked interlayers. Compared with the previously used single AlN interlayer, the AlGaN/AlN stacked interlayers can more effectively reduce the tensile stress inside the GaN layer. The cross-sectional TEM image reveals the bending and annihilation of threading dislocations (TDs) in the overgrown GaN film which leads to a decrease of TD density.

Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors

The leakage current of GaN Schottky barrier ultraviolet photodetectors is investigated. It is found that the photodetectors adopting undoped GaN instead of lightly Si-doped GaN as an active layer show a much lower leakage current even when they have a higher dislocation density. It is also found that the density of Ga vacancies in undoped GaN is much lower than in Si-doped GaN. The Ga vacancies may enhance tunneling and reduce effective Schottky barrier height, leading to an increase of leakage current. It suggests that when undoped GaN is used as the active layer, it is necessary to reduce the leakage current of GaN Schottky barrier ultraviolet photodetector.

Investigation on the structural origin of n-type conductivity in InN films

This work presents a study of the correlation between the electrical properties and the structural defects in nominally undoped InN films. It is found that the density of edge-type threading dislocations (TDs) considerably affects the electron concentration and mobility in InN films. The Hall-effect measured electron concentration increases, while the Hall mobility decreases with the increase in the edge-type TD density. With the combination of secondary ion mass spectrometry and positron annihilation analysis, we suggest that donor-type point defects at the edge-type TD lines may serve as dominant donors in InN films and affect the carrier mobility.