Quantum confinement effect in thin quantum wires

The electronic states and optical transition properties of three semiconductor wires Si? GaAs, and ZnSe are studied by the empirical pseudopotential homojunction model. The energy levels, wave functions, optical transition matrix elements, and lifetimes are obtained for wires of square cross section with width from 2 to 5 (root 2a/2), where a is the lattice constant. It is found that these three kinds of wires have different quantum confinement properties. For Si wires, the energy gap is pseudodirect, and the wave function of the electronic ground state consists mainly of four bulk Delta states. The optical transition matrix elements are much smaller than that of a direct transition, and increase with decreasing wire width. Where the width of wire is 7.7 Angstrom, the Si wire changes from an indirect energy gap to a direct energy gap due to mixing of the bulk Gamma(15) state. For GaAs wires. the energy gap is also pseudodirect in the width range considered, but the optical transition matrix elements are larger than those of Si wires by two orders of magnitude for the same width. However, there is no transfer to a direct energy gap as the wire width decreases. For ZnSe wires, the energy gap is always direct, and the optical transition matrix elements are comparable to those of the direct energy gap bulk semiconductors. They decrease with decreasing wire width due to mixing of the bulk Gamma(1) state with other states. All quantum confinement properties are discussed and explained by our theoretical model and the semiconductor energy band structures derived. The calculated lifetimes of the Si wire, and the positions of photoluminescence peaks, are in good agreement with experimental results.

Linear polarization of photoluminescence in quantum wires

The linear character of the polarization of the luminescence in porous Si is studied experimentally, and the corresponding luminescence characteristics in quantum wires are studied theoretically using a quantum cylindrical model in the framework of the effective-mass theory. From the experimental and theoretical results it is concluded that there is a stronger linear polarization parallel to the wire direction than there is perpendicular to the wire, and that it is connected with the valence band structure in quantum confinement in two directions. The theoretical photoluminescence spectra of the parallel and perpendicular polarization directions, and the degree of polarization as functions of the radius of the wire and the temperature are obtained for In0.53Ga0.47As quantum wires and porous silicon. From the theory, we demonstrated that the degree of polarization decreases with increasing temperature and radius, and that this effect is more apparent for porous Si. The theoretical results are in good agreement with the experimental results for the InGaAs quantum wires, and in qualitative agreement with those for the porous silicon.

Exciton states in isolated quantum wires

The exciton states in isolated and semi-isolated quantum wires are studied. It is found that the image charges have a large effect on the effective Coulomb potential in wires. For the isolated wire the effective potential approaches the Coulomb potential in vacuum at large z distance. For the semi-isolated wire the effective potential is intermediate between the Coulomb potential in vacuum and the screened Coulomb potential at large distance. The exciton binding energy in the isolated wire is about ten times larger than that in the quantum well, and that in the semi-isolated wire is also intermediate between those in the isolated wire and in the quantum well. When the lateral width increases the binding energy decreases further, and approaches that in the quantum well. The real valence-band structure is taken into account, the exciton wave functions of the ground state in the zero-order approximation are given, and the reduced mass is calculated. The effect of the coupling between the ground and excited states are considered by the degenerate perturbation method, and it is found the coupling effect is small compared to the binding energy.

Electronic structure of quantum spheres and quantum wires

The electronic structures of quantum spheres and quantum wires are studied in the framework of the effective-mass theory. The spin-orbital coupling (SOC) effect is taken into account. On the basis of the zero SOC limit and strong SOC limit the hole quantum energy levels as functions of SOC parameter lambda are obtained. There is a fan region in which the ground and low-lying excited states approach those in the strong SOC limit as lambda increases. Besides, some theoretical results on the corrugated superlattices (CSL) are given.

InAs Wires on InP （001）

The heterostructure of InAs/In0.52Al0.48As/InP is unique in that InAs wires instead of dots self-assemble in molecular beam epitaxy. These InAs wires have some distinctive features in their growth and structure. This paper summarizes the investigations of the growth and structural properties of InAs wires that have been performed in our laboratory recently.

Binding Energy of Biexcitons in GaAs Quantum-Well Wires

The binding energy of a biexciton in GaAs quantum-well wires is calculated variationally by use of a two-parameter trial wavefunction and a one-dimensional equivalent potential model. There is no artificial parameter added in our calculation. Our results agree fairly well with the previous results. It is found that the binding energies are closely correlative to the size of wire. The binding energy of biexcitons is smaller than that of neutral bound excitons in GaAs quantum-well wires when the dopant is located at the centre of the wires.

Highly conductive nb-doped BaTiO3 epitaxial thin films grown by laser molecular beam epitaxy

于2010-11-23批量导入

Self-assembled InAs quantum wires on InP(001)

Self-assembled InAs quantum wires (QWRs) embedded in In0.52Al0.48As In0.53Ga0.47As, and (In0.52Al0.48As)(2)/(In(0.53)Ga(0.47)AS)(2)-short-period-lattice matrixes on InP (001) were fabricated with molecular beam epitaxy (MBE). These QWR lines are along [110], x4 direction in the 2x4 reconstructed (001) surface as revealed with high energy electron diffraction (RHEED). Alignment of quantum wires in a multilayer structure depends on the composition of spacer layers.

Self-assembled quantum dots, wires and quantum-dot lasers

Molecular beam epitaxy-grown self-assembled In(Ga)As/GaAs and InAs/InAlAs/InP quantum dots (QDs) and quantum wires (QWRs) have been studied. By adjusting growth conditions, surprising alignment. preferential elongation, and pronounced sequential coalescence of dots and wires under specific condition are realized. The lateral ordering of QDs and the vertical anti-correlation of QWRs are theoretically discussed. Room-temperature (RT) continuous-wave (CW) lasing at the wavelength of 960 nm with output power of 3.6 W from both uncoated facets is achieved fi-om vertical coupled InAs/GaAs QDs ensemble. The RT threshold current density is 218 A/cm(2). A RT CW output power of 0.6 W/facet ensures at least 3570 h lasing (only drops 0.83 dB). (C) 2001 Elsevier Science B.V, All rights reserved.

High proton conductive advanced hybrid membrane based on sulfonated Si-SBA-15

Composite membranes based on Sulfonated poly(ether ether ketone) (SPEEK) and sulfonated organically modified Si-SBA-15 (S-SBA-15) were investigated with the purpose of increasing the proton conductivity. The novelty of the composite membranes was attributed to two special structures and different ion exchange capacities (IEC) of S-SBA-15 fillers, which were embedded in membranes. The typical hexagonal channels array of S-SBA-15 was confirmed by XRD and TEM. The regular vermiculate and amorphous structures of the inorganic fillers were proved by SEM. Composite membranes were prepared through common solvent casting method. SEM images indicated that the inorganic filler with regular structure dispersed homogeneously in the composite membranes, but the amorphous filler caused an agglomeration phenomenon at the same loading content.

Highly conductive, methanol resistant fuel cell membranes fabricated by layer-by-layer self-assembly of inorganic heteropolyacid

Layer-by-layer (LBL) self-assembly is a simple and elegant method of constructing organic-inorganic composite thin films from environmentally benign aqueous solutions. In this paper, we utilize this method to develop proton-exchange membranes for fuel cells. The multilayer film is constructed onto the surface of sulfonated poly(arylene ether ketone) (SPAEK-COOH) membrane by LBL self-assembly of polycation chitosan (CTS) and negatively charged inorganic particle phosphotungstic acid (VIA). The highly conductive inorganic nanoparticles ensure SPAEK-COOH-(CTS/PTA)(n) membranes to maintain high proton conductivity values up to 0.086 S cm(-1) at 25 degrees C and 0.24S cm(-1) at 80 degrees C, which are superior than previous LBL assembled electrolyte systems.

Electrostatic interaction hybrids from water-borne conductive polyaniline and inorganic precursor containing carboxyl group

Electrostatic interaction conductive hybrids were prepared in water/ethanol solution by the sol-gel process from inorganic sol containing carboxyl group and water-borne conductive polyaniline (cPANI). The electrostatic interaction hybrids film displayed 1-2 orders of magnitude higher electrical conductivity in comparison with common hybrids film, showing remarkable conductivity stability against water soaking. Most strikingly, it displayed ideal electrochemical activity even in a solution with pH = 14, which enlarged the conducting polyaniline application window to strong alkaline media.

Conductive hybrid film from polyaniline and polyurethane-silica

In order to improve the mechanical performance and water resistance of water-borne conducting polyaniline film, conducting polyaniline/polyurethane-silica hybrid film was prepared in aqueous solution employing silanol-terminated polyurethane and methyltriethoxysilane as sol-gel precursors. The hybrid film showed surface resistivity of 10(8) Omega even though the conducting polyaniline loading was only 10 wt% (or 1.5 wt% of polyaniline), and the mechanical performance as well as water resistance was significantly improved, making it suitable for antistatic application. Therefore, a practical route to water-borne processing of conducting polyaniline is disclosed.