Highly conductive nb-doped BaTiO3 epitaxial thin films grown by laser molecular beam epitaxy
| Data(s) |
2001
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| Resumo |
于2010-11-23批量导入 zhangdi于2010-11-23 13:11:29导入数据到SEMI-IR的IR Made available in DSpace on 2010-11-23T05:11:29Z (GMT). No. of bitstreams: 1 5562.pdf: 957221 bytes, checksum: d46df56769033907b394d35451ada3b8 (MD5) Previous issue date: 2001 中科院半导体所 |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Yan Lei;Lu Huibin;Chen Zhenghao;Dai Shouyu;Tan Guotai;Yang Guozhen.Highly conductive nb-doped BaTiO3 epitaxial thin films grown by laser molecular beam epitaxy,Chinese Physics Letters,2001,18(11):1513 |
| Palavras-Chave | #半导体材料 |
| Tipo |
期刊论文 |
