Polarized photoluminescence and temperature-dependent - Photoluminescence study of InAs quantum wires on InP(001)

InAs quantum wires (QWRs) have been fabricated on the InP(001), which has been evidenced by TEM and polarized photoluminescence measurements (PPL). The monlayer-splitting peaks (MSPs) in the PL spectrum of InAs QWRs can be clearly observed at low temperature measurements. Supposing a peak-shift of MSP identical to that of bulk material, we obtain the thermal activation energies of up to 5 MSPs. The smaller thermal activation energies for the MSPs of higher energy lead to the fast red-shift of PL peak as a whole.

Temperature-dependent bimodal size evolution of InAs quantum dots on vicinal GaAs(100) substrates

The effects of growth temperature on the bimodal size distribution of InAs quantum dots on vicinal GaAs(100) substrates grown by metal organic chemical vapor deposition are studied. An abnormal trend of the bimodal size evolution on temperature is observed. With the increase of the growth temperature, while the density of the large dots decreases continually, that of the small dots first grows larger when temperature was below 520 degrees C, and then exhibits a sudden decrease at 535 degrees C. The trend is explained by taking into account the presence of multiatomic steps on the substrates. Photoluminescence (PL) studies show that quantum dots on vicinal substrates have a narrower PL linewidth, a longer emission wavelength, and a larger PL intensity than those of the dots with exact substrates. (c) 2006 American Institute of Physics.

Synthesis and temperature-dependent near-band-edge emission of chain-like Mg-doped ZnO nanoparticles

Chain-like Mg-doped ZnO nanoparticles were prepared using a wet chemical method combined with subsequent heat treatment. The blueshifted near-band-edge emission of the doped ZnO sample with respect to the undoped one was investigated by temperature-dependent photoluminescence. Based on the energy shift of the free-exciton transition, a band gap enlargement of similar to 83 meV was estimated, which seems to result in the equivalent shift of the bound-exciton transition. At 50 K, the transformation from the donor-acceptor-pair to free-to-acceptor emissions was observed for both the undoped and doped samples. The results show that Mg doping leads to the decrease of the acceptor binding energy. (c) 2006 American Institute of Physics.

Unusual temperature-dependent optical properties of self-organized InAs/GaAs quantum dots at high excitation power

The temperature-dependent photoluminescence (PL) properties of InAs/GaAs self-organized quantum dots (QDs) have been investigated at high excitation power. The fast redshift of the ground-state and the first excited-state PL energy with increasing temperature was observed. The temperature-dependent linewidth of the QD ground state with high carrier density is different from that with low carrier density. Furthermore, we observed an increasing PL intensity of the first excited state of QDs with respect to that of the ground state and demonstrate a local equilibrium distribution of carriers between the ground state and the first excited state for the QD ensemble at high temperature (T > 80 K). These results provide evidence for the slowdown of carrier relaxation from the first excited state to the ground state in InAs/GaAs quantum dots.

Anomalous temperature-dependent bimodal size evolution of InAs quantum dots on vicinal GaAs(100) substrates

Temperature-dependent bimodal size evolution of InAs quantum dots on vicinal GaAs(100) substrates grown by metalorganic chemical vapor deposition (MOCVD) is studied. An abnormal trend of the evolution on temperature is observed. With the increase of the growth temperature, while the density of the large dots decreases continually, that of the small dots first grows larger when temperature was below 520 degrees C, and then there is a sudden decrease at 535 degrees C. Photoluminescence (PL) studies show that QDs on vicinal substrates have a narrower PL line width, a longer emission wavelength and a larger PL intensity.

Temperature-dependent modulation characteristics for 1.3 mu m InAs/GaAs quantum dot lasers

Temperature-dependent modulation characteristics of 1.3 mu m InAs/GaAs quantum dot (QD) lasers under small signals have been carefully studied at various bias currents. Based on experimental observations, it is found that the modulation bandwidth significantly increases when excited state (ES) lasing emerges at high temperature. This is attributed to additional photons emitted by ES lasing which contribute to the modulation response. A rate equation model including two discrete electron energy levels and the level of wetting layer has been used to investigate the temperature-dependent dynamic behavior of the QD lasers. Numerical investigations confirm that the significant jump for the small signal modulation response is indeed caused by ES photons. Furthermore, we identify how the electron occupation probabilities of the two discrete energy levels can influence the photon density of different states and finally the modulation rate. Both experiments and numerical analysis show that the modulation bandwidth of QD lasers at high temperature can be increased by injecting more carriers into the ES that has larger electron state degeneracy and faster carrier's relaxation time than the ground state.

Temperature dependent photoluminescence of an In(Ga)As/GaAs quantum dot system with different areal density

We have systematically studied the temperature dependent photoluminescence of a self-assembled In(Ga)As/GaAs quantum dot (QD) system with different areal densities from similar to 10(9) to similar to 10(11) cm(-2). Different carrier channels are revealed experimentally and confirmed theoretically via a modified carrier equation model considering a new carrier transfer channel, i.e. continuum states ( CS). The wetting layer is demonstrated to be the carrier quenching channel for the low-density QDs but the carrier transfer channel for the high-density QDs. In particular, for the InGaAs/GaAs QDs with a medium density of similar to 10(10) cm(-2), the CS is verified to be an additional carrier transfer channel in the low temperature regime of 10-60 K, which is studied in detail via our models. The possible carrier channels that act on different temperature regimes are further discussed, and it is demonstrated that density is not a crucial factor in determining the carrier lateral coupling strength.

Abnormal temperature dependent photoluminescence of self-assembled InAs/GaAs surface quantum dots with high areal density

We have investigated temperature dependent photoluminescence of both buried and surface self-assembled InAs/GaAs quantum dots with an areal density up to similar to 10(11)/cm(2). Different from the buried quantum dots, the peak energy of surface quantum dots shows a blueshift relative to the bulk material variation from 15 to 130K. Besides the line width and the integrated intensity both first decrease and then increase in this temperature interval. The observed phenomena can be explained by carrier trapping effects by some shallow localized centers near the surface quantum dots.

A temperature-dependent interaction of neutral red with calf thymus DNA

Neutral red (NR) is used as a probe to study the temperature and concentration dependent interaction of a cationic dye with nucleic acid. A temperature-dependent interaction of NR with calf thymus DNA (CT DNA) has been studied by differential pulse voltammetry (DPV), UV-Visible absorption, circular dichroism (CD) and fluorescence spectroscopy. The experimental results of increasing peak current, changes in the UV-Visible absorption and fluorescence spectra of NR and decreasing the induced circular dichroism (ICD) intensity show that (i) the binding mode of NR molecules is changed from intercalating into DNA base pairs to aggregating along the DNA double helix and (ii) the orientation of NR chromophore in DNA double helix is also changed with the temperature.