Abnormal temperature dependent photoluminescence of self-assembled InAs/GaAs surface quantum dots with high areal density

We have investigated temperature dependent photoluminescence of both buried and surface self-assembled InAs/GaAs quantum dots with an areal density up to similar to 10(11)/cm(2). Different from the buried quantum dots, the peak energy of surface quantum dots shows a blueshift relative to the bulk material variation from 15 to 130K. Besides the line width and the integrated intensity both first decrease and then increase in this temperature interval. The observed phenomena can be explained by carrier trapping effects by some shallow localized centers near the surface quantum dots.

Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-09-07T12:59:33Z No. of bitstreams: 1 Abnormal temperature dependent photoluminescence of self-assembled InAsGaAs surface quantum dots with high areal density.pdf: 540608 bytes, checksum: f015d76e710d3167bcadd0d34e53fa28 (MD5)

Approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-09-07T13:11:17Z (GMT) No. of bitstreams: 1 Abnormal temperature dependent photoluminescence of self-assembled InAsGaAs surface quantum dots with high areal density.pdf: 540608 bytes, checksum: f015d76e710d3167bcadd0d34e53fa28 (MD5)

Made available in DSpace on 2010-09-07T13:11:17Z (GMT). No. of bitstreams: 1 Abnormal temperature dependent photoluminescence of self-assembled InAsGaAs surface quantum dots with high areal density.pdf: 540608 bytes, checksum: f015d76e710d3167bcadd0d34e53fa28 (MD5) Previous issue date: 2010

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