Micro-Raman and Spreading Resistance Analysis on Beveled Implanted Germanium for Layer Transfer Applications

Raman and spreading resistance profiling have been used to analyze defects in germanium caused by hydrogen and helium implants, of typical fluences used in layer transfer applications. Beveling has been used to facilitate probing beyond the laser penetration depth. Results of Raman mapping along the projection area reveal that after post-implant annealing at 400°C, some crystal damage remains, while at 600°C, the crystal damage has been repaired. Helium implants create acceptor states beyond the projected range, and for both hydrogen and helium, 1×1016 acceptors/cm2 remain after 600°C. These are thought to be vacancy-related point defect clusters.

Characterization of Nickel Germanide Schottky Contacts for the Fabrication of Germanium p-channel MOSFETs

Nickel germanide Schottky contacts, formed by rapid thermal annealing of thin nickel films, have been characterized on n-type germanium wafers for a range of RTA temperatures. The highest Schottky barrier heights for electrons (= 0.6-0.7 eV) were obtained for RTA temperatures of approximately 300°C. For this RTA schedule, the corresponding barrier height for holes is close to zero, ideal for Schottky contacted p-channel germanium MOSFETs. When the RTA temperature was increased to 400oC, a dramatic reduction in electron barrier height (< 0.1 eV) was observed. This RTA schedule, therefore, appears ideal for ohmic source/drain contacts to n channel germanium MOSFETs. From sheet resistance measurements and XRD characterization, nickel germanide formation was found to occur at 300oC and above. The NiGe phase was dominant for RTA temperatures up to at least 435oC.

(Invited) Germanium on Sapphire Technology

Silicon-on-sapphire (SOS) substrates have been proven to offer significant advantages in the integration of passive and active devices in RF circuits. Germanium on insulator technology is a candidate for future higher performance circuits. Thus the advantages of employing a low loss dielectric substrate other than a silicon-dioxide layer on silicon will be even greater. This paper covers the production of germanium on sapphire (GeOS) substrates by wafer bonding. The quality of the germanium back interface is studied and a tungsten self-aligned gate process MOST process has been developed. High low field mobilities of 450-500 cm2/V-s have been achieved for p-channel MOSTs produced on GeOS substrates. Thick germanium on alumina (GOAL) substrates have also been produced.

Design, Manufacture and Performance of Germanium Bipolar Transistors

Germanium NPN bipolar transistors have been manufactured using phosphorus and boron ion implantation processes. Implantation and subsequent activation processes have been investigated for both dopants. Full activation of phosphorus implants has been achieved with RTA schedules at 535?C without significant junction diffusion. However, boron implant activation was limited and diffusion from a polysilicon source was not practical for base contact formation. Transistors with good output characteristics were achieved with an Early voltage of 55V and common emitter current gain of 30. Both Silvaco process and device simulation tools have been successfully adapted to model the Ge BJT(bipolar junction transistor) performance.

Optical source model for the 23.2-23.6 nm radiation from the multielement germanium soft X-ray laser

Distributions of source intensity in two dimensions (designated the source model), averaged over a single laser pulse, based on experimental measurements of spatial coherence, are considered for radiation from the unresolved 23.2/23.6 nm spectral lines from the germanium collisional X-ray laser. The model derives from measurements of the visibility of Young slit interference fringes determined by a method based on the Wiener-Khinchin theorem. Output from amplifiers comprising three and four target elements have similar coherence properties in directions within the horizontal plane corresponding to strong plasma refraction effects and fitting the coherence data shows source dimensions (FWHM) are similar to 26 mu m (horizontal), significantly smaller than expected by direct imaging, and similar to 125 mu m (vertical: equivalent to the height of the driver excitation). (C) 1999 Elsevier Science B.V. All rights reserved.

Dependence of spatial coherence of 23.2-23.6-nm radiation on the geometry of a multielement germanium x-ray laser target

The spatial coherence of a nanosecond pulsed germanium collisionally excited x-ray laser is measured experimentally for three target configurations. The diagnostic is based on Young's slit interference fringes with a dispersing element to resolve the 23.2- and 23.6-nm spectral lines. Target configurations include a double-slab target, known as the injector, and geometries in which the injector image is image relayed to seed either an additional single-slab target or a second double-slab target. A special feature of this study is the observation of the change in the apparent source size with angle of refraction across the diverging laser beam. Source sizes derived with a Gaussian source model decrease from 44 mu m for the injector target by a variable factor of as much as 2, according to target configuration, for beams leaving the additional amplifiers after strong refraction in the plasma. (C) 1998 Optical Society of America [S0740-3224(98)00810-8].

Observation of high transient gain in the germanium x-ray laser at 19.6 nm

The transient-excitation pumping scheme, in which a picosecond duration pulse rapidly heats the plasma preformed by a low-intensity nanosecond pulse, was used to pump the Ne-like germanium, J = 0-1 transition at 19.6 nm. A small-signal gain coefficient of 30 cm(-1) was measured for targets less than or equal to 5 mm long. (C) 1998 Optical Society of America.

Time dependence of the spatial coherence of the 23.6- and 23.2-nm radiation from the germanium soft-x-ray laser

The time dependence of the spatial coherence of the combined spectral lines at 23.2 and 23.6 nm from the Ge XXIII collisionally pumped soft-x-ray laser with a double-slab target is examined within a single nanosecond pulse by use of Young's interference fringes and a streak camera. High source intensity is linked with low spatial coherence and vice verse. Calculations of the source intensity, size, and position have also been made; these calculations refer to a single-slab source. Comparison between the observed and calculated intensities, and of the source sizes both calculated and derived from the Young's fringes by interpretation with a Gaussian model of source emission, show good agreement in general trends. (C) 1998 Optical Society of America [S0740-3224(98)01905-5].

Spatial coherence of x-ray laser emission from neonlike germanium after prepulse

The time-integrated spatial coherence of neonlike germanium x-ray laser radiation has been studied with a new dispersing coherence diagnostic. Angle-dependent spatial coherence data are recorded by sampling the diverging beam at each lasing wavelength in several directions simultaneously. Measurements of the spatial coherence, and hence effective source sizes, relevant to the output beams from double-slab targets for the J = 2-1 spectral lines at wavelengths 28.6, 23.6, and 23.2 nm and for the J = 0-1 line at 19.6 nm show differences, which indicate different conditions in the plasma volume amplifying these emissions. Targets are pumped by subnanosecond pulse drivers, with and without a prepulse, but 19.6 nm emission is detected only in the prepulsed case. The differences are discussed in terms of the time evolution of the spectral lines. (C) 1997 Optical Society of America.