Circular geometry transistors fabricated on germanium-on-alumina bonded substrates
Data(s) |
01/10/2010
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Identificador | |
Idioma(s) |
eng |
Direitos |
info:eu-repo/semantics/restrictedAccess |
Fonte |
Baine , P , Low , Y , Rainey , P , Gamble , H , Armstrong , M , Mitchell , N & McNeill , D 2010 , ' Circular geometry transistors fabricated on germanium-on-alumina bonded substrates ' Paper presented at 218th ECS Meeting, Semiconductor Wafer Bonding: Science, Technology & Applications , Las Vegas , United States , 01/10/2010 - 01/10/2010 , pp. 0-0 . |
Tipo |
conferenceObject |