Applications of Heavy Ion Irradiation in Photonic Crystal Research

Photonic crystals (PC) have received extensive attention for the photonic band gap (PBG). The polystyrene (PS) particles bottom-up approach is a productive method for photonic crystal manufacture, this kind of photonic crystals having an unique PBG that depends on the particle's shape, sizes and defects. Heavy ion irradiation is a very useful method to induce defects in PC and change the shapes of the particles to tune the PBG. MeV heavy ion irradiation leads to an anisotropic deformation of the particles from spherical to ellipsoidal, the aspect ratio of which can be precisely controlled by using the ion energy and flux. Sub-micrometer PS particles were deposited on a Cu substrate and were irradiated at 230 K by using heavy ion energy and fluence in the range from 2 to 10 MeV and 1 x 10(14) cm(-2) to 1 x 10(15) cm(-2); respectively.

Applications of Heavy Ion Irradiation in Photonic Crystal Research

Photonic crystals (PC) have received extensive attention for the photonic band gap (PBG). The polystyrene (PS) particles bottom-up approach is a productive method for photonic crystal manufacture, this kind of photonic crystals having an unique PBG that depends on the particle's shape, sizes and defects. Heavy ion irradiation is a very useful method to induce defects in PC and change the shapes of the particles to tune the PBG. MeV heavy ion irradiation leads to an anisotropic deformation of the particles from spherical to ellipsoidal, the aspect ratio of which can be precisely controlled by using the ion energy and flux. Sub-micrometer PS particles were deposited on a Cu substrate and were irradiated at 230 K by using heavy ion energy and fluence in the range from 2 to 10 MeV and 1 x 10(14) cm(-2) to 1 x 10(15) cm(-2); respectively.

土壤微生物和酶对大气CO2浓度与温度升高的响应

土壤微生物(Soil microbes)是生态系统的重要组成部分，它参与土壤中复杂有机物质的分解和再合成，也参与C、N、S、P等的循环。土壤酶(Soil enzyme)是土壤中具有生物活性的蛋白质，它与微生物一起推动着土壤的生物化学过程，并在树木营养物质的转化中起着重要的作用。鉴于土壤微生物和土壤酶对环境变化的敏感性，它们在CO2浓度和温度升高时的反应将在很大程度上影响森林生态系统的结构和功能。因此，要全面评价大气CO2浓度和温度升高对整个生态系统的影响，有必要对CO2浓度和温度升高条件下的土壤微生物的反应进行深入的研究与探讨。本文应用自控、封闭、独立的生长室系统，研究了川西亚高山岷江冷杉（Abies faxoniana）根际、非根际土壤微生物数量，红桦（Betula albosinensis）根际微生物数量以及根际、非根际土壤酶活性对大气CO2浓度(环境CO2浓度+350±25μmol·mol-1，EC)和温度(环境温度+2.0±0.5℃，ET)升高及两者同时升高(ECT)的响应。结果表明： 1) EC和ET显著增加岷江冷杉根际微生物数量，但不同微生物种类对EC和ET的反应有所差异。6、8和10月，岷江冷杉根际微生物数量与对照(CK)相比，EC处理的根际细菌数量分别增加了35%、164%和312%，ET处理增加了30%、115%和209%；EC和ET处理对根际放线菌和根际真菌数量影响不显著。ECT处理的根际放线菌数量分别增加了49%、50%和96%，根际真菌数量增加了151%、57%和48%；而ECT对根际细菌数量影响不显著。EC、ET和ECT处理对岷江冷杉土壤微生物总数的根际效应明显，其R/S值分别为1.93、1.37和1.46(CK的R/S值为0.81)。 2) 红桦根际微生物数量对EC、ET和ECT的响应不同。生长季节(5~10月)，高密度的红桦根际细菌数量与CK 相比，EC的根际细菌数量分别增加28%、33%、423%、65%、43%和79%，而低密度的红桦根际细菌数量增加不显著。ET能显著增加根际细菌数量(7~10月)，其中高密度的根际细菌数量分别增加了377%、107%、35%、22%，而低密度的根际细菌数量分别增加了27%、27%、64%、48%；ECT对两个密度水平下根际细菌数量均未产生有显著的影响。高、低密度的红桦根际放线菌和根际真菌数量与 CK 相比，EC显著增加了低密度的红桦根际放线菌数量，而对高密度的根际放线菌数量无显著影响；ET和ECT对高低密度的红桦根际放线菌数量均未产生显著影响。EC和ET对高低密度的根际真菌数量也无显著影响，而ECT却显著增加了高低密度的根际真菌数量。 3) EC、ET和ECT处理的低密度红桦根际微生物(细菌、放线菌和真菌)数量没有显著高于或低于高密度根际微生物数量，表明短期内密度对红桦根际微生物数量不产生影响。 4) 不同种类的氧化还原酶对EC、ET和ECT的响应不同。5~10月，EC的红桦根际过氧化氢酶活性是CK 的1.44、1.06、1.11、1.10、1.12和1.24倍，差异显著(6月除外)；ET和ECT处理根际过氧化氢酶活性无显著增加。EC的红桦根际多酚氧化酶活性比CK显著增加；ET的根际多酚氧化酶活性显著高于CK(8月除外)。ECT的根际多酚氧化酶活性高于CK，差异不显著。EC的根际脱氢酶活性分别增加了46%、40%、133%、48%、17%和26%，差异显著。5~7月，ET和ECT的根际脱氢酶活性高于CK的脱氢酶活性，而8~9月则相反，差异性均不显著。 5) EC、ET和ECT对不同种类的水解酶的影响不同。EC能显著增加红桦根际脲酶活性，5~10月分别增加了29%、42%，、70%、67%、59%和57%。ET和ECT 对根际脲酶活性未产生显著影响。EC显著提高根际转化酶活性，5、6和9月EC的根际转化酶活性分别比CK高51%、42%和40%。5和10月，ET的根际转化酶活性低于CK，而其余月份却高于CK，但均具有显著性差异。ECT的根际转化酶活性与CK的根际转化酶活性有显著性差异(9月除外)，5、6和7月的根际转化酶活性分别提高了94%、198%和67%。 6) 与CK相比，EC、ET和ECT的非根际土壤微生物数量以及非根际土壤酶活性均无显著提高。EC、ET和ECT的过氧化氢酶、脲酶的根际效应明显，而多酚氧化酶和脱氢酶根际效应不明显。EC和ECT的转化酶根际效应明显，而ET的转化酶根际效应不明显。 It is well known that atmospheric CO2 concentration and temperature are increasing as a consequence of human activities. In past decades, considerable efforts had been put into investigating the effects of climate change on processes of forest ecological system. In general, studies had been mainly focused on the effects of elevated atmospheric CO2 on plant physiology and development, litter quality, and soil microorganisms. Studies showed that there was variation in the responses of root development and below-ground processes to climate between different plant communities. Since the concentration of CO2 in soil was much higher (10~50 times) than in the atmosphere, increasing levels of atmospheric CO2 may not directly in fluence below ground processes. Betula albosinensis and Abies faxoniana, as the dominated tree species of subalpine dark coniferous forest in the western Sichuan province, which play an important role in the structure and function of this kind of forest ecosystem. In our study, effects of elevated atmospheric CO2 concentration (350±25μmol·mol-1), increased temperature (2.0±0.5℃) and both of the two on the number of rhizospheric microbe and rhizospheric enzyme activity were studied by the independent and enclosed-top chamber’ system under high-frigid conditions. Responses of rhizospheric bacteria, actinomycetes and fungi number of Betula albosinensis and Abies faxoniana under different densities(high density with 84 stems·m-2, low density with 28 stems·m-2 ), and rhizospheric enzyme activity of Betula albo-sinensis to elevated CO2 concentration and increased temperature were analyzed and discussed. The results are as the following, 1) In comparion with the control, the numbers of rhizospheric bacteria of Abies faxoniana were increased by 35%, 164% and 312% significantly in June, August and October respectively of EC, and were increased by 30%, 115% and 209% respectively of ET.However the effect of EC and ET on rhizospheric actinomycetes and fungi was not significant. The number of rhizospheric actinomycetes of ECT were increased significantly by 49%, 50% and 96% respectively, and the increment of rhizospheric fungi were 151%, 57% and 48% respectively .The effect of ECT on rhizospheric bacteria was not significant. Rhizospheric effect of soil microbe for all treatments was significant, with the R/S of 1.93, 1.27 and 1.46 for EC, ET and ECT, respectively. 2) Treatment EC improved the number of rhizospheric bacteria of Betula albosinensis under high density significantly in comparison with the control, over the growing season, the greatest increment of rhizospheric bacteria was from July. However, EC had no effect on the number of rhizospheric bacteria under low density. Except May and June, treatment ET improved the number of rhizospheric signifcantly. The effect of treatment ECT on the number of rhizospheric bacteria under different densities was not significant. Of treatment EC, the number of rhizospheric actinomycetes of Betula albosinensis under low density were increased significantly, however, treatment EC did not stimulate the number of rhizospheric actinomycetes under high density. Simultaneously, treatment ET and ECT did not stimulate the number of rhizospheric actinomycetes. Finally, in treatment ECT, the number of rhizospheric fungi under high density were increased significantly, however treatment EC and ET did not stimulate the number of rhizospheric fungi under different densities. 3) Of treatment EC, ET and ECT, the number of rhizospheric microbe of Betula albosinensis under low density were not more or fewer than that of microbe under hign density along the growing season, which showed that plant density had no effect on the nmber of microbe. 4) From May to October, 2004，rhizospheric catalase activity of Betula albosinensis of treatment EC was 1.44, 1.06, 1.11, 1.10, 1.12 and 1.24 times as treatment CK respectively, and the difference was statistically significant(except June). Treatment ET and ECT did not increase rhizospheric catalase activity significantly. In treatment EC, the rhizospheric pohyphenol oxidase activity was higher than treatment CK significantly. The rhizospheric pohyphenol oxidase activity of treatment ET was higher than CK significantly (except August). The rhizospheric pohyphenol oxidase activity of treatment ECT was higher than CK, but the difference was not statistically significant. Over the growing period, the rhizospheric dehydrogenase activity were increased 46%, 40%, 133%, 48%, 17% and 26% respectively by treatment EC, and the difference was statistically significant. From May to July, the rhizospheric dehydrogenase activity in treatment ET and ECT was higher than CK, but from August to October, the rhizospheric dehydrogenase activity was lower than CK, the difference was not significant. 5) Treatment EC increased rhizospheric urease activity significantly, from May to October, rhizospheric urease activity were increased 29%, 42%, 70%, 67%, 59% and 57% respectively by EC. Treatment ET and ECT had no effect on rhizospheric urease activity. Treatment EC improved rhizospheric invertase activity significantly, in May, June and September, the rhizospheric invertase activity of treatment EC were increased 51%, 42% and 40% in comparison with the control. Except May and October, the rhizospheric invertase activity of treatment ET was markly higher than CK. The rhizospheric invertase activity of treatment ECT was significantly different from CK (except September), in May, June and July treatment ECT increased rhizospheric invertase activity by 94%, 198% and 67% respectively. 6) In comparison with the control, treatment EC, ET, and ECT had no effect on the number of non-rhizospheric microbe and non-rhizospheric enzyme activity. Rhizospheric effect of catalase and urease for all treatments was significant, but rhizospheric effect of pohyphenol oxidase and dehydrogenase was not significant. Rhizospheric effect of invertase of EC and ECT was significant, but rhizospheric effect of invertase of ET was not significant.

Photoluminescence character of Xe ion irradiated sapphire

In the present work the photoluminescence (PL) character of sapphire implanted with 180 keV Xe and irradiated with 308 MeV Xe ions was studied. The virgin, implanted and irradiated samples were investigated by PL and Fourier transform infrared (FTIR) spectra measurements. The obtained PL spectra showed the maximum emission bands at 2.75, 3.0 and 3.26 eV for the implanted fluence of 1.0 x 10(15) ions/cm(2) and at 2.4 and 3.47 eV for the irradiated fluence of 1.0 x 10(13) ions/cm(2). The FTIR spectra showed a broaden absorption band between 460 and 630 cm(-1), indicating that strong damaged region formed in Al2O3.

The influence of the microstructure evolution on the surface morphology in the annealing process of helium-implanted spinel

Single-crystalline spinel (MgAl2O4) specimens were implanted with helium ions of 100 keV at three successively increasing fluences of (0.5, 2.0 and 8.0) x 10(16) ions/cm(2) at room temperature. The specimens were subsequently annealed in vacuum at different temperatures ranging from 500 to 1100 degrees C. Different techniques, including Fourier transformed infrared spectroscopy (FTIR), thermal desorption spectrometry (TDS), atomic force microscopy (AFM) and scanning electron microscopy (SEM) were used to investigate the specimens, It was found that the absorbance peak in the FTIR due to the stretching vibration of the Al-O bond shifts to smaller wave numbers with increasing fluence, shifting back to larger wave numbers with an increase of annealing temperature. The absorbance peak shift has a linear relationship with the fluence increase in the as-implanted state, while it does not have a linear relationship with the fluence increase after the annealing process. Surface deformation occurred in the specimens implanted with fluences of 2.0 and 8.0 x 10(16) ions/cm(2) in the annealing process. The phenomena described above can be attributed to differences in defect formation in the specimens. (C) 2008 Elsevier B.V. All rights reserved.

Modification of ZnO films under high energy Xe-ion irradiations

ZnO films were deposited on (100) Si substrate by radio frequency magnetron sputtering. These films were irradiated at room temperature with 308 MeV Xe-ions to a fluence of 1.0 x 10(12), 1.0 x 10(13) or 1.0 x 10(14) Xe/cm(2). Then the samples were investigated using RBS, XRD, FESEM and PL analyses. The obtained experimental results showed that the deposited ZnO films were highly c-axis orientated and of high purity, 308 MeV Xe-ion irradiations could not change the c-axis oriented. The topography and PL properties of the ZnO films varied with increasing the Xe-ion irradiation fluence. For 1.0 x 10(13) or 1.0 x 10(14) Xe/cm(2) irradiated samples, surface cracks were observed. Furthermore, it was found that the 1.0 x 10(14) Xe/cm(2) irradiated sample exhibiting the strongest PL ability. The modification of structure and PL properties induced by 308 MeV Xe-ion irradiations were briefly discussed. (C) 2008 Elsevier B.V. All rights reserved.

纳秒激光诱导C60分子碎裂中轻碎片离子C+n(n＜30)的产生机理研究

The time of flight mass spectrometric technique was used to determine the initial mean kinetic energy of small fragment ions C-n(+) (n <= 11) produced from C-60 excited by 532 nm nanosecond laser pulses. The measured kinetic energy shows little variation with the fragment mass and the laser fluence in a broad range. Based on the assumption that C-30(+) is produced predominantly by a single electron emission followed by successive C-2 evaporation from hot C-60 in the nanosecond laser field, the formation of small fragments is interpreted as the complete breakup of the unstable C-30(+) cage structure. The interpretation is consistent with the previously observed results.

Study of He-induced nano-cavities as sinks of oxygen for forming silicon-on-insulator

In the present work, a Cz-Silicon wafer is implanted with helium ions to produce a buried porous layer, and then thermally annealed in a dry oxygen atmosphere to make oxygen transport into the cavities. The formation of the buried oxide layer in the case of internal oxidation (ITOX) of the buried porous layer of cavities in the silicon sample is studied by positron beam annihilation (PBA). The cavities are formed by 15 keV He implantation at a fluence of 2 x 10(16) cm(-2) and followed by thermal annealing at 673 K for 30 min in vacuum. The internal oxidation is carried out at temperatures ranging from 1073 to 1473 K for 2 h in a dry oxygen atmosphere. The layered structures evolved in the silicon are detected by using the PBA and the thicknesses of their layers and nature are also investigated. It is found that rather high temperatures must be chosen to establish a sufficient flux of oxygen into the cavity layer. On the other hand high temperatures lead to coarsening the cavities and removing the cavity layer finally.

Modification of Fe/Cu multilayers under 400 keV Xe20+ irradiation

Two kinds of Fe/Cu multilayers with different modulation wavelength were deposited on cleaved Si(100) substrates and then irradiated at room temperature using 400 keV Xe20+ in a wide range of irradiation fluences. As a comparison, thermal annealing at 300-900 degrees C was also carried out in vacuum. Then the samples were analyzed by XRD and the evolution of crystallite structures induced by irradiation was investigated. The obtained XRD patterns showed that, with increase of the irradiation fluence, the peaks of Fe became weaker, the peaks related to Cu-based fcc solid solution and Fe-based bcc solid solution phase became visible and the former became strong gradually. This implied that the intermixing at the Fe/Cu interface induced by ion irradiation resulted in the formation of the new phases which could not be achieved by thermal annealing. The possible intermixing mechanism of Fe/Cu multilayers induced by energetic ion irradiation was briefly discussed.

Raman spectroscopy of apatite irradiated with swift heavy ions with and without simultaneous exertion of high pressure

Durango apatite was irradiated with energetic U ions of 2.64 GeV and Kr ions of 2.1 GeV, with and without simultaneous exposure to a pressure of 10.5 GPa. Analysis by confocal Raman spectroscopy gives evidence of vibrational changes being marginal for fluences below 5x10(11) ions/cm(2) but becoming dominant when increasing the fluence to 8x10(12) ions/cm(2). Samples irradiated with U ions experience severe strain resulting in crystal cracking and finally breakage at high fluences. These radiation effects are directly linked to the formation of amorphous tracks and the fraction of amorphized material increasing with fluence. Raman spectroscopy of pressurized irradiated samples shows small shifts of the band positions with decreasing pressure but without a significant change of the Gruneisen parameter. Compared to irradiations at ambient conditions, the Raman spectra of apatite irradiated at 10.5 GPa exhibit fewer modifications, suggesting a higher radiation stability of the lattice by the pressure applied.

Damage accumulation in gallium nitride irradiated with various energetic heavy ions

In this work a study of damage production in gallium nitride via elastic collision process (nuclear energy deposition) and inelastic collision process (electronic energy deposition) using various heavy ions is presented. Ordinary low-energy heavy ions (Fe+ and Mo+ ions of 110 keV), swift heavy ions (Pb-208(27+) ions of 1.1 MeV/u) and slow highly-charged heavy ions (Xen+ ions of 180 keV) were employed in the irradiation. Damage accumulation in the GaN crystal films as a function of ion fluence and temperature was studied with RBS-channeling technique, Raman scattering technique, scanning electron microscopy (SEM) and transmission electron microscopy (TEM). For ordinary low-energy heavy ion irradiation, the temperature dependence of damage production is moderate up to about 413 K resulting in amorphization of the damaged layer. Enhanced dynamic annealing of defects dominates at higher temperatures. Correlation of amorphization with material decomposition and nitrogen bubble formation was found. In the irradiation of swift heavy ions, rapid damage accumulation and efficient erosion of the irradiated layer occur at a rather low value of electronic energy deposition (about 1.3 keV/nm(3)),. which also varies with irradiation temperature. In the irradiation of slow highly-charged heavy ions (SHCI), enhanced amorphization and surface erosion due to potential energy deposition of SHCI was found. It is indicated that damage production in GaN is remarkably more sensitive to electronic energy loss via excitation and ionization than to nuclear energy loss via elastic collisions.

Microstructural evolution in silicon implanted with chlorine ions

In the present work p-type Si specimens were implanted with Cl ions of 100 keV to successively increasing fluences of 1 x 10(15), 5 x 10(15), 1 x 10(16) and 5 x 10(16) ions cm(-2) and subsequently annealed at 1073 K for 30 min. The microstructure was investigated with the transmission electron microscopy (TEM) in both the plane-view and the cross-sectional view. The implanted layer was amorphized after chlorine implantation even at the lowest ion fluence, while re-crystallization of the implanted layer occurs on subsequent annealing at 1073 K. In the annealed specimens implanted above the lowest fluence three layers along depth with different microstructures were found, which include a shallow polycrystalline porous layer, a deeper single-crystalline layer containing high density of gas bubbles, a well separated deeper layer composed of dislocation loops in low density. With increasing ion fluence the thickness of the porous polycrystalline layer increases. It is indicated that chlorine can suppress the epitaxial re-crystallization of implanted silicon, when the implant fluence of Cl ions exceeds a certain level.

Structural modification of C-doped SiO2 induced by swift heavy ion irradiations

Thermally grown amorphous SiO2 samples were implanted at room temperature (RT) with 120 keV C-ions to a dose ranging from 1.0 x 10(16) to 8.6 x 10(17)C ions/cm(2), then irradiated at RT with 950 MeV Pb, 345 or 1754 MeV Xe ions to a fluence in the region from 1.0 x 10(11) to 3.8 x 10(12) ions/cm(2), respectively. The irradiated samples were investigated using micro-FTIR and micro-Raman spectroscopes. It was found that new chemical bonds such as Si-C, C=C(O), C C and Si(C)-O-C bonds formed significantly in the C-doped SiO2 films after heavy ion irradiations. The evolution of Si-O-C bonds and possible mechanism of structural modification in C-doped SiO2 induced by swift heavy ion irradiations were discussed.

Photoluminescence of inert-gas ion implanted sapphire after 230-MeV Pb ion irradiation

In the present work the photoluminescence (PL) character of sapphire implanted with 110-keV He, Ar or Ne ions and subsequently irradiated with 230-MeV Pb was studied. The implantation was performed at 320 and 600 K using fluences from 5.0 x 10(16) to 2.0 x 10(17) ions/cm(2). The Pb ion irradiation was carried out at 320 K. The obtained PL spectra showed peaks at 375, 413 and 450 nm with maximum intensity at an implantation fluence of 5.0 x 10(16) ions/cm(2) and a new peak at 390 nm appeared in the He-implanted and subsequently Pb-irradiated samples. Infrared spectra showed a broadening of the absorption band between 460 and 510 nm indicating strongly damaged regions formed in the Al2O3 samples. A possible PL mechanism is discussed.