Structural modification of C-doped SiO2 induced by swift heavy ion irradiations
| Data(s) |
3914
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| Resumo |
Thermally grown amorphous SiO2 samples were implanted at room temperature (RT) with 120 keV C-ions to a dose ranging from 1.0 x 10(16) to 8.6 x 10(17)C ions/cm(2), then irradiated at RT with 950 MeV Pb, 345 or 1754 MeV Xe ions to a fluence in the region from 1.0 x 10(11) to 3.8 x 10(12) ions/cm(2), respectively. The irradiated samples were investigated using micro-FTIR and micro-Raman spectroscopes. It was found that new chemical bonds such as Si-C, C=C(O), C C and Si(C)-O-C bonds formed significantly in the C-doped SiO2 films after heavy ion irradiations. The evolution of Si-O-C bonds and possible mechanism of structural modification in C-doped SiO2 induced by swift heavy ion irradiations were discussed. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Wang, ZG (Wang, Z. G.); Zhao, ZM (Zhao, Z. M.); Benyagoub, A (Benyagoub, A.); Toulemonde, M (Toulemonde, M.); Levesque, F (Levesque, F.); Song, Y (Song, Y.); Jin, YF (Jin, Y. F.); Sun, YM (Sun, Y. M.); Liu, CB (Liu, C. B.); Zang, H (Zang, H.); Wei, KF (Wei, K. F.).Structural modification of C-doped SiO2 induced by swift heavy ion irradiations,NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS ,39142,256(1):288-292 |
| Palavras-Chave | #swift heavy ion irradiations #C-doped SiO2 #structural modification #FTIR and Raman spectroscopes |
| Tipo |
期刊论文 |
