Photothermal deflection measurement on heat transport in GaAs epitaxial layers

In this paper, we report the in-plane and cross-plane measurements of the thermal diffusivity of double epitaxial layers of n-type GaAs doped with various concentrations of Si and a p-type Be-doped GaAs layer grown on a GaAs substrate by the molecular beam epitaxial method, using the laser-induced nondestructive photothermal deflection technique. The thermal diffusivity value is evaluated from the slope of the graph of the phase of the photothermal deflection signal as a function of pump-probe offset. Analysis of the data shows that the cross-plane thermal diffusivity is less than that of the in-plane thermal diffusivity. It is also seen that the doping concentration has a great influence on the thermal diffusivity value. Measurement of p-type Be-doped samples shows that the nature of the dopant also influences the effective thermal diffusivity value. The results are interpreted in terms of a phonon-assisted heat transfer mechanism and the various scattering process involved in the propagation of phonons

Photothermal beam deflection for non-destructive evaluation of semiconductor thin films

Non-destructive testing (NDT) is the use of non-invasive techniques to determine the integrity of a material, component, or structure. Engineers and scientists use NDT in a variety of applications, including medical imaging, materials analysis, and process control.Photothermal beam deflection technique is one of the most promising NDT technologies. Tremendous R&D effort has been made for improving the efficiency and simplicity of this technique. It is a popular technique because it can probe surfaces irrespective of the size of the sample and its surroundings. This technique has been used to characterize several semiconductor materials, because of its non-destructive and non-contact evaluation strategy. Its application further extends to analysis of wide variety of materials. Instrumentation of a NDT technique is very crucial for any material analysis. Chapter two explores the various excitation sources, source modulation techniques, detection and signal processing schemes currently practised. The features of the experimental arrangement including the steps for alignment, automation, data acquisition and data analysis are explained giving due importance to details.Theoretical studies form the backbone of photothermal techniques. The outcome of a theoretical work is the foundation of an application.The reliability of the theoretical model developed and used is proven from the studies done on crystalline.The technique is applied for analysis of transport properties such as thermal diffusivity, mobility, surface recombination velocity and minority carrier life time of the material and thermal imaging of solar cell absorber layer materials like CuInS2, CuInSe2 and SnS thin films.analysis of In2S3 thin films, which are used as buffer layer material in solar cells. The various influences of film composition, chlorine and silver incorporation in this material is brought out from the measurement of transport properties and analysis of sub band gap levels.The application of photothermal deflection technique for characterization of solar cells is a relatively new area that requires considerable attention.The application of photothermal deflection technique for characterization of solar cells is a relatively new area that requires considerable attention. Chapter six thus elucidates the theoretical aspects of application of photothermal techniques for solar cell analysis. The experimental design and method for determination of solar cell efficiency, optimum load resistance and series resistance with results from the analysis of CuInS2/In2S3 based solar cell forms the skeleton of this chapter.

Photothermal deflection studies on heat transport in intrinsic and extrinsic InP

Laser induced transverse photothermal deflection technique has been employed to determine the thermal parameters of InP doped with Sn, S and Fe as well as intrinsic InP. The thermal diffusivity values of these various samples are evaluated from the slope of the curve plotted between the phase of photothermal deflection signal and pump-probe offset. Analysis of the data shows that heat transport and hence the thermal diffusivity value, is greatly affected by the introduction of dopant. It is also seen that the direction of heat flow with respect to the plane of cleavage of semiconductor wafers influences the thermal diffusivity value. The results are explained in terms of dominating phonon assisted heat transfer mechanism in semiconductors.

Determination of the laser-induced damage threshold of bulk polymer samples at 1.06 mu m using the pulsed photothermal deflection technique

A pulsed Nd-YAG laser beam is used to produce a transient refractive index gradient in air adjoining the plane surface of the sample material. This refractive index gradient is probed by a continuous He-Ne laser beam propagating parallel to the sample surface. The observed deflection signals produced by the probe beam exhibit drastic variations when the pump laser energy density crosses the damage threshold for the sample. The measurements are used to estimate the damage threshold for a few polymer samples. The present values are found to be in good agreement with those determined by other methods.

Application of laser beam deflection technique to study the diffusion process in electrolyte solutions

A simple method based on laser beam deflection to study the variation of diffusion coefficient with concentration in a solution is presented. When a properly fanned out laser beam is passed through a rectangular cell filled with solution having concentration gradient, the emergent beam traces out a curved pattern on a screen. By taking measurements on the pattern at different concentrations, the variation of diffusion coefficient with concentration can be determined.

Photothermal deflection studies of GaAs epitaxial layers

Photothermal beam deflection studies were carried out with GaAs epitaxial double layers grown on semi-insulating GaAs substrates. The impurity densities in thin epitaxial layers were found to influence the effective thermal diffusivity of the entire structure.

Studies on Heat Diffusion in Selected Conducting Polymers using Probe Beam Deflection and Photoacoustic Techniques

In the present study, radio frequency plasma polymerization technique is used to prepare thin films of polyaniline, polypyrrole, poly N-methyl pyrrole and polythiophene. The thermal characterization of these films is carried out using transverse probe beam deflection method. Electrical conductivity and band gaps are also determined. The effect of iodine doping on electrical conductivity and the rate of heat diffusion is explored.Bulk samples of poyaniline and polypyrrole in powder form are synthesized by chemical route. Open photoacoustic cell configuration is employed for the thermal characterization of these samples. The effect of acid doping on heat diffusion in these bulk samples of polyaniline is also investigated. The variation of electrical conductivity of doped polyaniline and polypyrrole with temperature is also studied for drawing conclusion on the nature of conduction in these samples. In order to improve the processability of polyaniline and polypyrrole, these polymers are incorporated into a host matrix of poly vinyl chloride. Measurements of thermal diffusivity and electrical conductivity of these samples are carried out to investigate the variation of these quantities as a function of the content of polyvinyl chloride.

Measurement of laser ablation threshold on doped BiSrCaCuO high temperature superconductors by the pulsed photothermal deflection technique

Laser‐induced damage and ablation thresholds of bulk superconducting samples of Bi2(SrCa)xCu3Oy(x=2, 2.2, 2.6, 2.8, 3) and Bi1.6 (Pb)xSr2Ca2Cu3 Oy (x=0, 0.1, 0.2, 0.3, 0.4) for irradiation with a 1.06 μm beam from a Nd‐YAG laser have been determined as a function of x by the pulsed photothermal deflection technique. The threshold values of power density for ablation as well as damage are found to increase with increasing values of x in both systems while in the Pb‐doped system the threshold values decrease above a specific value of x, coinciding with the point at which the Tc also begins to fall.  

Damage threshold determination of bulk polymer samples using pulsed photothermal deflection technique

Photothermal deflection technique was used for determining the laser damage threshold of polymer samples of teflon (PTFE) and nylon. The experiment was conducted using a Q-switched Nd-YAG laser operating at its fundamental wavelength (1-06μm, pulse width 10 nS FWHM) as irradiation source and a He-Ne laser as the probe beam, along with a position sensitive detector. The damage threshold values determined by photothermal deflection method were in good agreement with those determined by other methods.

Photoacoustic and photothermal deflection studies on certain selected photonic materials“

The emergence of lasers in the early sixties has not only revolutionized the field of optics and communication but also paved new ways in the field of material characterization. Material studies using photothermal techniques possess certain unique characteristics and advantages over conventional methods. The most important aspect of photothennal techniques is their ability to perform noncontact and nondestructive measurement. Photoacoustics, photothermal deflection, thermal lens, photothermal radiometry and photopyroelectric methods are some of the commonly used and powerful techniques for the thermal and optical characterization of materials using lasers. In this thesis the applications of photoacoustic and photothermal deflection techniques for the thermal and optical characterization of different photonic materials, namely, semiconductors, liquid crystals and dye-doped polymers are discussed

Non-destructive evaluation of carrier transport properties in CuInS2 and CuInSe2 thin films using photothermal deflection technique

Photothermal deflection technique (PTD) is a non-destructive tool for measuring the temperature distribution in and around a sample, due to various non-radiative decay processes occurring within the material. This tool was used to measure the carrier transport properties of CuInS2 and CuInSe2 thin films. Films with thickness <1 μm were prepared with different Cu/In ratios to vary the electrical properties. The surface recombination velocity was least for Cu-rich films (5×105 cm/s for CuInS2, 1×103 cm/s for CuInSe2), while stoichiometric films exhibited high mobility (0.6 cm2/V s for CuInS2, 32 cm2/V s for CuInSe2) and high minority carrier lifetime (0.35 μs for CuInS2, 12 μs for CuInSe2

Elektrochemo- und mikromechanisches Verhalten elektronisch leitfähiger Polymere

Intrinsisch leitfähige Polymere sind durch eine Reihe materialspezifischer Eigenschaften gekennzeichnet. In Abhängigkeit des angelegten Potenzials und der chemischen Umgebung zeigen sie elektrochromes Verhalten, Veränderungen der Masse, des Volumens und der elektronischen Leitfähigkeit. Basierend auf diesen Eigenschaften eignen sich halbleitende organische Polymere als funktionales Material für Anwendungen in der Mikro- und Nanotechnologie, insbesondere für miniaturisierte chemische Sensoren und Aktoren. Im Gegensatz zu konventionellen Piezo-Aktoren operieren diese Aktoren z. B. bei Spannungen unterhalb 1 V. Diese Arbeit befasst sich mit den elektrochemomechanischen Eigenschaften der ausgewählten Polymere Polyanilin und Polypyrrol, d. h. mit den potenzialkontrollierten Veränderungen des Volumens, der Struktur und der mechanischen Eigenschaften. Bei diesem Prozess werden positive Ladungen innerhalb der Polymerphase generiert. Um die für den Ladungsausgleich benötigten Gegenionen bereitzustellen, werden alle Messungen in Anwesenheit eines wässrigen Elektrolyten durchgeführt. Der Ladungstransport und die Volumenänderungen werden mit den Methoden der zyklischen Voltammetrie, der elektrochemischen Quarzmikrowaage und der Rastersondenmikroskopie untersucht. Signifikante Ergebnisse können für dünne homogene Polymerschichten erhalten werden, wobei Schichtdicken oberhalb 150 nm aufgrund der insbesondere bei Polyanilin einsetzenden Bildung von Fadenstrukturen (Fibrillen) vermieden werden. Von besonderem Interesse im Rahmen dieser Arbeit ist die Kombination der funktionalen Polymere mit Strukturen auf Siliziumbasis, insbesondere mit mikrostrukturierten Cantilevern. Die zuvor erhaltenen Ergebnisse bilden die Grundlage für das Design und die Dimensionierung der Mikroaktoren. Diese bestehen aus Siliziumcantilevern, die eine Elektrodenschicht aus Gold oder Platin tragen. Auf der Elektrode wird mittels Elektrodeposition eine homogene Schicht Polymer mit Schichtdicken bis zu 150 nm aufgebracht. Die Aktorcharakteristik, die Biegung des Cantilevers aufgrund des angelegten Potenzials, wird mit dem aus der Rastersondenmikroskopie bekannten Lichtzeigerverfahren gemessen. Das Aktorsystem wird hinsichtlich des angelegten Potenzials, des Elektrolyten und der Redox-Kinetik charakterisiert. Die verschiedenen Beiträge zum Aktorverhalten werden in situ während des Schichtwachstums untersucht. Das beobachtete Verhalten kann als Superposition verschiedener Effekte beschrieben werden. Darunter sind die Elektrodenaufladung (Elektrokapillarität), die Veränderungen der Elektrodenoberfläche durch dünne Oxidschichten und die Elektrochemomechanik des Polymers.

A Motion compensated filtering approach to remove sunlight flicker in shallow water images

A common problem in video surveys in very shallow waters is the presence of strong light fluctuations, due to sun light refraction. Refracted sunlight casts fast moving patterns, which can significantly degrade the quality of the acquired data. Motivated by the growing need to improve the quality of shallow water imagery, we propose a method to remove sunlight patterns in video sequences. The method exploits the fact that video sequences allow several observations of the same area of the sea floor, over time. It is based on computing the image difference between a given reference frame and the temporal median of a registered set of neighboring images. A key observation is that this difference will have two components with separable spectral content. One is related to the illumination field (lower spatial frequencies) and the other to the registration error (higher frequencies). The illumination field, recovered by lowpass filtering, is used to correct the reference image. In addition to removing the sunflickering patterns, an important advantage of the approach is the ability to preserve the sharpness in corrected image, even in the presence of registration inaccuracies. The effectiveness of the method is illustrated in image sets acquired under strong camera motion containing non-rigid benthic structures. The results testify the good performance and generality of the approach

El ritme i l'expressió : de la marxa al rock and roll. 'El ritmo y la expresión : de la marcha al rock and roll'.

Crédito del área de música y educación física para alumnos de 14-16 años. Se pretende que el alumno desarrolle sus posibilidades expresivas utilizando elementos y acciones que formen parte de su vida cotidiana como el baile. Los objetivos son que el alumno sea capaz de: identificar y utilizar formas de comunicación expresivas con su propio cuerpo; tener una visión integradora del área artística; conseguir trasladar la experiencia entre música, color, forma y movimiento; expresar intereses latentes referentes a la expresión artística. Se trabajan los sigientes contenidos: cualidades del sonido; elementos del lenguaje musical; danza y música; la música jazz; elementos técnicos que configuran el balet clásico y la danza jazz.