Photothermal deflection studies of GaAs epitaxial layers
| Data(s) |
03/11/2011
03/11/2011
01/08/2002
|
|---|---|
| Resumo |
Photothermal beam deflection studies were carried out with GaAs epitaxial double layers grown on semi-insulating GaAs substrates. The impurity densities in thin epitaxial layers were found to influence the effective thermal diffusivity of the entire structure. Cochin University of Science and Technology |
| Identificador |
Applied Optics, Vol. 41, Issue 24, pp. 5179-5184 (2002) |
| Idioma(s) |
en |
| Publicador |
Optical Society of America |
| Palavras-Chave | #Photothermal beam defiection #GaAs epitaxial double layer |
| Tipo |
Working Paper |
