Optical and electrical properties of hydrogen-passivated gallium antimonide

The effect of hydrogen-plasma passivation on the optical and electrical properties of gallium antimonide bulk single crystals is presented. Fundamental changes of the radiative recombination after hydrogenation in undoped, zinc-doped, tellurium-doped, and codoped (with Zn and Te) GaSb are reported. The results of optical measurements indicate that passivation of acceptors is more efficient than that of the donors and, in general, the passivation efficiency depends on the doping level. Passivation of deep nonradiative centers is reflected by the gain of photoluminescence intensity and decrease in deep-level transient spectroscopy peak height. Extended defects like grain boundaries and dislocations have also been found to be passivated. The thermal stability of the passivated deep level and extended defects is higher than that of the shallow level. The kinetics of thermally released hydrogen in the bulk has been studied by reverse-bias annealing experiments.

Interface states of laser ablated BaTiO3 and Ba0.9Ca0.1TiO3 thin films in MFS structure determined by DLTS and C – V technique

BaTiO3 and Ba0.9Ca0.1TiO3 thin films were deposited on the p – type Si substrate by pulsed excimer laser ablation technique. The Capacitance – Voltage (C-V) measurement measured at 1 MHz exhibited a clockwise rotating hysteresis loop with a wide memory window for the Metal – Ferroelectric – Semiconductor (MFS) capacitor confirming the ferroelectric nature. The low frequency C – V measurements exhibited the response of the minority carriers in the inversion region while at 1 MHz the C – V is of a high frequency type with minimum capacitance in the inversion region. The interface states of both the MFS structures were calculated from the Castagne – Vaipaille method (High – low frequency C – V curve). Deep Level Transient Spectroscopy (DLTS) was used to analyze the interface traps and capture cross section present in the MFS capacitor. There were distinct peaks present in the DLTS spectrum and these peaks were attributed to the presence of the discrete interface states present at the semiconductor – ferroelectric interface. The distribution of calculated interface states were mapped with the silicon energy band gap for both the undoped and Ca doped BaTiO3 thin films using both the C – V and DLTS method. The interface states of the Ca doped BaTiO3 thin films were found to be higher than the pure BaTiO3 thin films.

Numerical simulations of CO2 migration during charnockite genesis

Charnockite is considered to be generated either through the dehydration of granitic magma by CO2 purging or by solid-state dehydration through CO2 metasomatism during granulite facies metamorphism. To understand the extent of dehydration, CO2 migration is quantitatively modeled in silicate melt and metasomatic fluid as a function of temperature, H2O wt%, pressure, basal CO2 flux and dynamic viscosity. Numerical simulations show that CO2 advection through porous and permeable high-grade metamorphic rocks can generate dehydrated patches close to the CO2 flow path, as illustrated by the occurrences of ``incipient charnockites.'' CO2 reaction-front velocity constrained by field observations is 0.69 km/m.y., a reasonable value, which matches well with other studies. On the other hand, temperature, rate of cooling, and basal CO2 flux are the critical parameters affecting CO2 diffusion through a silicate melt. CO2 diffusion through silicate melt can only occur at temperature greater than 840 degrees C and during slow cooling (<= 3.7 x 10(-5) degrees C/yr), features that are typical of magma emplacement in the lower crust. Stalling of CO2 fluxing at similar to 840 degrees C explains why some deep-level plutons contain both hydrous and anhydrous (charnockitic) mineral assemblages. CO2 diffusion through silicate melt is virtually insensitive to pressure. Addition of CO2 basal flux facilitates episodic dehydrated melt migration by generating fracture pathways.

Influence of film thickness on the properties of sprayed ZnO thin films for gas sensor applications

Transparent conducting ZnO films were prepared at substrate temperature 400 degrees C with different film thicknesses by nebulizer spray pyrolysis method on glass substrates. XRD studies reveal that the films are polycrystalline in nature having hexagonal crystal structure with preferred grain orientations along (0 0 2) and (1 0 1) directions. The crystallite size increases along (0 0 2) plane with the thickness increase and attains a maximum 109 nm for 913 nm film thickness. Analysis of structural parameters indicates that the films having thickness 913 nm are found to have minimum dislocation density and strain values. The HRSEM measurements show that the surface morphology of the films also changes with film thickness. EDAX estimates the average atomic percentage ratio of Zn and O in the ZnO films. Optical studies reveal the band gap energy decrease from 3.27 to 3.14 eV with increase of film thickness. Room temperature PL spectra show the near-band-edge emission and deep-level emission due to the presence of defects in the ZnO thin films. Impedance spectroscopy analysis indicates that grain boundary resistance decreases with the increasing ammonia concentration up to 500 ppm and the maximum sensitivity is found to be 1.7 for 500 ppm of ammonia. (C) 2014 Elsevier Ltd. All rights reserved.

Self-assembled ZnO nanoparticles on ZnO microsheet: ultrafast synthesis and tunable photoluminescence properties

We report on the tunable photoluminescence characteristics of porous ZnO microsheets fabricated within 1-5 min of microwave irradiation in the presence of a capping agent such as citric acid, and mixture of citric acid with polyvinylpyrrolidone (PVP). The UV emission intensity reduces to 60% and visible emission increases tenfold when the molar concentration of citric acid is doubled. Further diminution of the intensity of UV emission (25%) is observed when PVP is mixed with citric acid. The addition of nitrogen donor ligands to the parent precursor leads to a red shift in the visible luminescence. The deep level emission covers the entire visible spectrum and gives an impression of white light emission from these ZnO samples. The detailed luminescence mechanism of our ZnO samples is described with the help of a band diagram constructed by using the theoretical models that describe the formation energy of the defect energy levels within the energy band structure. Oxygen vacancies play the key role in the variation of the green luminescence in the ZnO microsheets. Our research findings provide an insight that it is possible to retain the microstructure and simultaneously introduce defects into ZnO. The growth of the ZnO microsheets may be due to the self assembly of the fine sheets formed during the initial stage of nucleation.

Wide-Range Thermometry at Micro/Nano Length Scales with In2O3 Octahedrons as Optical Probes

We report the temperature-dependent photoluminescence and Raman spectra of In2O3 octahedrons synthesized by an evaporation condensation process. The luminescence obtained here is due to the defect-related deep level emission, which shows highly temperature-dependent behavior in 83-573 K range. Both the position as well as the intensity varies with temperature. Similarly, Raman spectroscopy in 83-303 K range shows temperature-dependent variation in peak intensity but no change in the peak position. Interestingly, the variation of intensity for different peaks is consistent with Placzek theory which invokes the possibility of temperature sensing. We demonstrate the reversibility of peak intensity with temperature for consecutive cycles and excellent stability of the octahedrons toward cryogenic temperature sensing. Overall, both the temperature-dependent photoluminescence and Raman spectra can be explored to determine temperature in the cryogenic range at micro/nano length scales. As an example, we evaluate the temperature-dependent Raman spectra of WO3 that undergoes a phase transition around 210 K and temperature-dependent luminescence of Rhodamine 6G (Rh6G) where intensity varies with temperature.

DLTS analysis of amphoteric interface defects in high-TiO2 MOS structures prepared by sol-gel spin-coating

High-kappa TiO2 thin films have been fabricated from a facile, combined sol-gel spin - coating technique on p and n type silicon substrate. XRD and Raman studies headed the existence of anatase phase of TiO2 with a small grain size of 18 nm. The refractive index `n' quantified from ellipsometry is 2.41. AFM studies suggest a high quality, pore free films with a fairly small surface roughness of 6 angstrom. The presence of Ti in its tetravalent state is confirmed by XPS analysis. The defect parameters observed at the interface of Si/TiO2 were studied by capacitance - voltage (C - V) and deep level transient spectroscopy (DLTS). The flat - band voltage (V-FB) and the density of slow interface states estimated are -0.9, -0.44 V and 5.24x10(10), 1.03x10(11) cm(-2); for the NMOS and PMOS capacitors, respectively. The activation energies, interface state densities and capture cross -sections measured by DLTS are E-V + 0.30, E-C - 0.21 eV; 8.73x10(11), 6.41x10(11) eV(-1) cm(-2) and 5.8x10(-23), 8.11x10(-23) cm(2) for the NMOS and PMOS structures, respectively. A low value of interface state density in both P-and N-MOS structures makes it a suitable alternate dielectric layer for CMOS applications. And also very low value of capture cross section for both the carriers due to the amphoteric nature of defect indicates that the traps are not aggressive recombination centers and possibly can not contribute to the device operation to a large extent. (C) 2015 Author(s).

Nonvolatile holograms in LiNbO3 : Fe : Cu by use of the bleaching effect

We report our observation of a bleaching effect under an ultraviolet exposure in LiNbO3:Fe:Cu crystals. Two three-step recording-transferring-fixing schemes are proposed to record nonvolatile photorefractive holograms in such crystals. In the schemes two red laser beams and an ultraviolet illumination are used selectively to write the charge grating in the shallow-level Fe centers, to develop the charge grating in the deep-level Cu centers by transferring the charge grating in the Fe centers, and to fix only the charge grating in the Cu centers for unerasable read-out. Experimental results, verifications, and an optimal recording scheme are given. A comparison of the lithium niobate crystals of the same double-doping system of Fe:Mn, Ce:Mn, Ce:Cu, and Fe:Cu is outlined. (C) 2002 Optical Society of America.

Epitaxial growth of ZnO thin films on LiGaO2 substrates by pulsed-laser deposition

Lattice-matched (Delta(a/a) = 1.8-3.4%) (001) LiGaO2 substrates have been employed for the first time to grow ZnO thin films by pulsed-laser deposition at 350-650 degrees C with oxygen partial pressure of 20Pa. XRD shows that a highly c-axis-oriented ZnO film can be deposited on (001) LiGaO2 substrate at 500 degrees C. AFM images reveal the surfaces of as-deposited ZnO films are smooth and root-mean-square values are 6.662, 5.765 and 6.834 nm at 350, 500 and 650 degrees C, respectively. PL spectra indicate only near-band-edge UV emission appears in the curve of ZnO film deposited at 500 degrees C. The deep-level emission of ZnO film deposited at 650 degrees C probably results from Li diffusion into the film. All the results illustrate substrate temperature plays a pretty important role in obtaining ZnO film with a high quality on LiGaO2 substrate by pulsed-laser deposition. (c) 2006 Elsevier B.V. All rights reserved.

Annealing effect on properties of ZnO thin films grown on LiNbO3 substrates by MOCVD

ZnO films were grown on (0 0 0 1) LiNbO3 substrates by metal organic chemical vapor deposition (MOCVD). Annealing of ZnO films was performed in air for I h at 800 degrees C. The effects of annealing on the structural and optical properties of ZnO thin films on LiNbO3 substrates were investigated using X-ray diffraction (XRD), atomic force microscopy (AFM) and photoluminescence (PL) measurements. XRD patterns and AFM showed that the as-grown and the annealed ZnO films grown on LiNbO3 substrates had c-axis preferential orientation, the crystallinity of the ZnO films grown on LiNbO3 Substrates was improved, and the grain size increased by annealing. The PL spectra showed that the intensity of the UV near-band-edge peak was increased after annealing, while the intensity of visible peak (deep-level emission) decreased. (c) 2005 Elsevier B.V. All rights reserved.

Growth and properties of ZnO thin film on beta-Ga2O3(100) substrate by pulsed laser deposition

Zinc oxide (ZnO) thin films were grown on the beta-Ga2O3 (100) substrate by pulsed laser deposition (PLD). X-ray diffraction (XRD) indicated that the ZnO films are c-axis oriented. The optical and electrical properties of the films were investigated. The room temperature Photoluminescence (PL) spectrum showed a near band emission at 3.28 eV with two deep level emissions. Optical absorption indicated a visible exciton absorption at room temperature. The as-grown films had good electrical properties with the resistivities as low as 0.02 Omega cm at room temperature. Thus, beta-Ga2O3 (100) substrate is shown to be a suitable substrate for fabricating ZnO film. (c) 2006 Elsevier B.V. All rights reserved.

Ônus de argumentação, relações de prioridade e decisão jurídica: mecanismos de controle e de redução da incerteza na subidealidade do sistema jurídico

O escopo deste trabalho é investigar a natureza e as funções dos ônus de argumentação em suas relações com o sistema jurídico e com a argumentação jurídica. O pano de fundo para o desenvolvimento dessas análises é o triplo condicionamento do direito. De acordo com essa visão, o direito e a argumentação jurídica são condicionados extrínseca, intrínseca e institucionalmente. Nesse cenário, defende-se, por um lado, que os ônus argumentativos são componentes necessários de um sistema jurídico que compreende regras e princípios. Analisados estruturalmente, os ônus argumentativos são compreendidos, por outro lado, como efeitos de regras e standards que consolidam relações de prioridade normativas. A partir dessas relações, defende-se que ônus de argumentação são mecanismos de redução e controle da incerteza que caracteriza necessariamente a subidealidade do sistema jurídico ao (i) facilitarem a manutenção das relações de prioridade que os sustentam na solução de casos concretos, (ii) dificultarem a inversão dessas relações e (iii) instituírem pontos de parada na argumentação jurídica em situações nas quais o desenvolvimento de cadeias argumentativas não é capaz de garantir se, em determinado caso concreto, certa relação de prioridade deve ser mantida ou invertida.

Structure and UV emission of nanocrystal ZnO films by thermal oxidation of ZnS films

ZnO films prepared by the thermal oxidation of the ZnS films through thermal evaporation are reported. The as-deposited ZnS films have transformed to ZnO films completely at 400 degrees C. The 400-700 degrees C annealed films with a preferential c-axis (002) orientation have a hexagonal wurtzite structure. The band gap of ZnO films shifts towards longer wavelength with the increase of the annealing temperature. The relationship between the band gap energy of ZnO films and the grain size is discussed. The shift of the band gap energy can be ascribed to the quantum confinement effect in nanocrystal ZnO films. The photoluminescence spectra of ZnO films show a dominant ultraviolet emission and no deep level or trap state defect emission in the green region. It confirms the absence of interstitial zinc or oxygen vacancies in ZnO films. These results indicate that ZnO film prepared by this simple thermal oxidation method is a promising candidate for optoelectronic devices and UV laser. (c) 2005 Elsevier BN. All rights reserved.

Transforming aquatic agricultural systems towards gender equality: a five country review

Aquatic agricultural systems (AAS) are systems in which the annual production dynamics of freshwater and/or coastal ecosystems contribute significantly to total household income. Improving the livelihood security and wellbeing of the estimated 250 million poor people dependent on AAS in Bangladesh, Cambodia, the Philippines, the Solomon Islands and Zambia is the goal of the Worldfish Center-led Consortium Research Program (CRP), “Harnessing the development potential of aquatic agricultural systems for development.” One component expected to contribute to sustainably achieving this goal is enhancing the gender and wider social equity of the social, economic and political systems within which the AAS function. The CRP’s focus on social equity, and particularly gender equity, responds to the limited progress to date in enhancing the inclusiveness of development outcomes through interventions that offer improved availability of resources and technologies without addressing the wider social constraints that marginalized populations face in making use of them. The CRP aims to both offer improved availability and address the wider social constraints in order to determine whether a multi-level approach that engages with individuals, households and communities, as well as the wider social, economic and political contexts in which they function, is more successful in extending development’s benefits to women and other excluded groups. Designing the research in development initiatives to test this hypothesis requires a solid understanding of each CRP country’s social, cultural and economic contexts and of the variations across them. This paper provides an initial input into developing this knowledge, based on a review of literature on agriculture, aquaculture and gender relations within the five focal countries. Before delving into the findings of the literature review, the paper first justifies the expectation that successfully achieving lasting wellbeing improvements for poor women and men dependent on AAS rests in part on advances in gender equity, and in light of this justification, presents the AAS CRP’s conceptual framew

Tunable electronic transport characteristics of surface-architecture-controlled ZnO nanowire field effect transistors.

Surface-architecture-controlled ZnO nanowires were grown using a vapor transport method on various ZnO buffer film coated c-plane sapphire substrates with or without Au catalysts. The ZnO nanowires that were grown showed two different types of geometric properties: corrugated ZnO nanowires having a relatively smaller diameter and a strong deep-level emission photoluminescence (PL) peak and smooth ZnO nanowires having a relatively larger diameter and a weak deep-level emission PL peak. The surface morphology and size-dependent tunable electronic transport properties of the ZnO nanowires were characterized using a nanowire field effect transistor (FET) device structure. The FETs made from smooth ZnO nanowires with a larger diameter exhibited negative threshold voltages, indicating n-channel depletion-mode behavior, whereas those made from corrugated ZnO nanowires with a smaller diameter had positive threshold voltages, indicating n-channel enhancement-mode behavior.