Annealing effect on properties of ZnO thin films grown on LiNbO3 substrates by MOCVD


Autoria(s): Wang YZ; Wang HL; 李抒智; 周圣明; Hang Y; 徐军; Ye JD; Gu SL; Zhang R
Data(s)

2005

Resumo

ZnO films were grown on (0 0 0 1) LiNbO3 substrates by metal organic chemical vapor deposition (MOCVD). Annealing of ZnO films was performed in air for I h at 800 degrees C. The effects of annealing on the structural and optical properties of ZnO thin films on LiNbO3 substrates were investigated using X-ray diffraction (XRD), atomic force microscopy (AFM) and photoluminescence (PL) measurements. XRD patterns and AFM showed that the as-grown and the annealed ZnO films grown on LiNbO3 substrates had c-axis preferential orientation, the crystallinity of the ZnO films grown on LiNbO3 Substrates was improved, and the grain size increased by annealing. The PL spectra showed that the intensity of the UV near-band-edge peak was increased after annealing, while the intensity of visible peak (deep-level emission) decreased. (c) 2005 Elsevier B.V. All rights reserved.

Identificador

http://ir.siom.ac.cn/handle/181231/5513

http://www.irgrid.ac.cn/handle/1471x/12228

Idioma(s)

英语

Fonte

Wang YZ;Wang HL;李抒智;周圣明;Hang Y;徐军;Ye JD;Gu SL;Zhang R.,J. Cryst. Growth,2005,284(3~4):319-323

Palavras-Chave #光学材料;晶体 #annealing #LiNbO3 #PL #XRD #MOCVD #ZnO thin films
Tipo

期刊论文