967 resultados para conduction
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We report on chevrons (herringbonelike patterns) observed in homeotropically aligned liquid crystals with high electric conductivity. We focus our attention on two types of chevrons observed in the conduction regime. The threshold voltage and the characteristic double periodicity of chevrons (i.e., the short wavelength lambda(1) of the striated rolls and the long wavelength lambda(2) Of the chevron bands) have been measured as functions of the applied electric frequency f. With the aid of a crossed polarizer set, we have, in addition, determined the director field which shows a periodic in-plane rotation for our chevrons (with a wavelength lambda(2)) We arrived at the types of chevrons after qualitatively different bifurcation sequences with increasing voltage. The frequency dependence of lambda(2) also shows a qualitatively different behavior with respect to the two types of chevrons. The experimental results are discussed in terms of recent theoretical investigations.
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Recent research on Variable Stiffness (VS) laminates, which are constructed by steering the fiber orientation as a spatial function of location, have shown to improve laminate performance under mechanical loads. Two distinct cases of stiffness variation can be achieved either by variation of the fiber orientation in the direction of the global x-axis, or perpendicular to it. In the present paper, thermal analysis of a VS laminate is performed to study the effect of steering fibers on transient heat conduction under uniform heat flux using finite element method. The goal of the present paper is a parametric study of the effect of variable stiffness properties on transient response including time to reach steady state and temperature profile. Also, stress resultants and maximum stress location are investigated under different boundary conditions. A FEM algorithm is applied to exactly incorporate the boundary conditions for stress resultant analysis.
Resumo:
Recent research on Variable Stiffness (VS) laminates, which are constructed by steering the fiber orientation as a spatial function of location, have shown to improve laminate performance under mechanical loads. Two distinct cases of stiffness variation can be achieved either by variation of the fiber orientation in the direction of the global x-axis, or perpendicular to it. In the present paper, thermal analysis of VS laminate is performed to study the effect of steering fibers on transient heat conduction under uniform heat flux using finite element method. The goal of the present paper is a parametric study of the
effect of variable stiffness properties on transient response including time to reach steady state and temperature profile. Also, stress resultants and maximum stress location are investigated under different boundary conditions. A FEM algorithm is applied to exactly incorporate the boundary conditions.
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Recent experiments on Au break junctions [Phys. Rev. Lett. 88 (2002) 216803] have characterized the nonlinear conductance of stretched short Au nanowires. They reveal in the voltage range 10-20 meV the signatures of dissipation effects, likely due to phonons in the nanowire, reducing the conductance below the quantized value of 2e(2)/h. We present here a theory, based on a model tight-binding Hamiltonian and on non-equilibrium Green's function techniques, which accounts for the main features of the experiment. The theory helps in revealing details of the experiment which need to be addressed with a more realistic, less idealized, theoretical framework. (C) 2004 Elsevier B.V. All rights reserved.
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Two mechanisms of conduction were identified from temperature dependent (120 K-340 K) DC electrical resistivity measurements of composites of poly(c-caprolactone) (PCL) and multi-walled carbon nanotubes (MWCNTs). Activation of variable range hopping (VRH) occurred at lower temperatures than that for temperature fluctuation induced tunneling (TFIT). Experimental data was in good agreement with the VRH model in contrast to the TFIT model, where broadening of tunnel junctions and increasing electrical resistivity at T > T-g is a consequence of a large difference in the coefficients of thermal expansion of PCL and MWCNTs. A numerical model was developed to explain this behavior accounting for a thermal expansion effect by supposing the large increase in electrical resistivity corresponds to the larger relative deformation due to thermal expansion associated with disintegration of the conductive MWCNT network. MWCNTs had a significant nucleating effect on PCL resulting in increased PCL crystallinity and an electrically insulating layer between MWCNTs. The onset of rheological percolation at similar to 0.18 vol% MWCNTs was clearly evident as storage modulus, G' and complex viscosity, vertical bar eta*vertical bar increased by several orders of magnitude. From Cole-Cole and Van Gurp-Palmen plots, and extraction of crossover points (G(c)) from overlaying plots of G' and G '' as a function of frequency, the onset of rheological percolation at 0.18 vol% MWCNTs was confirmed, a similar MWCNT loading to that determined for electrical percolation.
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The temperature dependence of electrical conductivity and the photoconductivity of polycrystalline Cu2ZnSnS4 were investigated. It was found that at high temperatures the electrical conductivity was dominated by band conduction and nearest-neighbour hopping. However, at lower temperatures, both Mott variable-range hopping (VRH) and Efros–Shklovskii VRH were observed. The analysis of electrical transport showed high doping levels and a large compensation ratio, demonstrating large degree of disorder in Cu2ZnSnS4. Photoconductivity studies showed the presence of a persistent photoconductivity effect with decay time increasing with temperature, due to the presence of random local potential fluctuations in the Cu2ZnSnS4 thin film. These random local potential fluctuations cannot be attributed to grain boundaries but to the large disorder in Cu2ZnSnS4.
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This document could not have been completed without the hard work of a number of individuals. First and foremost, my supervisor, Dr. David Gabriel deserves the utmost recognition for the immense effort and time spent guiding the production of this document through the various stages of completion. Also, aiding in the data collection, technical support, and general thought processing were Lab Technician Greig Inglis and fellow members of the Electromyographic Kinesiology Laboratory Jon Howard, Sean Lenhardt, Lara Robbins, and Corrine Davies-Schinkel. The input of Drs. Ted Clancy, Phil Sullivan and external examiner Dr. Anita Christie, all members ofthe assessment committee, was incredibly important and vital to the completion of this work. Their expertise provided a strong source of knowledge and went to ensure that this project was completed at exemplary level. There were a number of other individuals who were an immense help in getting this project off the ground and completed. The donation of their time and efforts was very generous and much needed in order to fulfill the requirements needed for completion of this study. Finally, I cannot exclude the contributions of my family throughout this project especially that of my parents whose support never wavers.
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Mémoire numérisé par la Division de la gestion de documents et des archives de l'Université de Montréal.
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Polyfurfural thin films lying in the thickness range of 1300–2000 A˚ were prepared by ac plasma polymerization technique. The current–voltage characteristics in symmetric and asymmetric electrode configuration were studied with a view to determining the dominant conduction mechanism.It was found that the Schottky conduction mechanism is dominant in plasma polymerized furfural thin films.The predominance of Schottky mechanism was further confirmed based on the thermally stimulated current measurements.
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Dept.of Instrumentation,Cochin University of Science and Technology
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A brief account of the several methods used for the production of thin films is presented in this Chapter. The discussions stress on the important methods used for the fabrication of a-si:H thin films. This review' also reveals ‘that almost all the general methods, like vacuum evaporation, sputtering, glow discharge and even chemical methods are currently employed for the production of a-Si:H thin films. Each method has its own advantages and disadvantages. However, certain methods are generally preferred. Subsequently a detailed account of the method used here for the preparation of amorphous silicon thin films and their hydrogenation is presented. The metal chamber used for the electrical and dielectric measurements is also described. A brief mention is made-on the electrode structure, film area and film geometry.