Hopping conduction and persistent photoconductivity in Cu2ZnSnS4 thin films


Autoria(s): González, J. C.; Ribeiro, G. M.; Viana, E. R.; Fernandes, P. A.; Salomé, P. M. P.; Gutíerrez, K.; Abelenda, A.; Matinaga, F. M.; Leitão, J. P.; Cunha, A. F. da
Data(s)

13/01/2014

13/01/2014

2013

Resumo

The temperature dependence of electrical conductivity and the photoconductivity of polycrystalline Cu2ZnSnS4 were investigated. It was found that at high temperatures the electrical conductivity was dominated by band conduction and nearest-neighbour hopping. However, at lower temperatures, both Mott variable-range hopping (VRH) and Efros–Shklovskii VRH were observed. The analysis of electrical transport showed high doping levels and a large compensation ratio, demonstrating large degree of disorder in Cu2ZnSnS4. Photoconductivity studies showed the presence of a persistent photoconductivity effect with decay time increasing with temperature, due to the presence of random local potential fluctuations in the Cu2ZnSnS4 thin film. These random local potential fluctuations cannot be attributed to grain boundaries but to the large disorder in Cu2ZnSnS4.

Identificador

DOI 10.1088/0022-3727/46/15/155107

0022-3727

http://hdl.handle.net/10400.22/3314

Idioma(s)

eng

Publicador

IOP Science

Relação

Journal of Physics D: Applied Physics; Vol. 46, Issue 15

http://iopscience.iop.org/0022-3727/46/15/155107

Direitos

openAccess

Tipo

article