Influence of tire geometry on the horn effect

A reciprocal-configuration Boundary Element Method calculation of acoustic radiation characteristics has been implemented for a generic tire geometry. The influence of the geometric parameters on the radiation characteristics has been studied. The degree of amplification of noise sources on the tire belt is strongly affected by the overall tire width. In contrast, the tire radius predominantly influences the pattern of the varying amplification around the belt, rather than its absolute level. Radiusing the tire's 'shoulder' region is potentially beneficial in terms of lowering amplification levels, for a tire of fixed overall width. However, it is less effective than maintaining sharp shoulders and reducing the overall width. Thus, for an acoustically optimal belted tire, the overall width should be as small as possible, even if this leads to a larger diameter. The width should not be increased in order to accommodate a radiused crown region. Copyright © (2012) by the Institute of Noise Control Engineering (INCE).

Functional domains and the antiviral effect of the double-stranded RNA-dependent protein kinase PKR from Paralichthys olivaceus

The double-stranded RNA (dsRNA)-dependent protein kinase PKR is thought to mediate a conserved antiviral pathway by inhibiting viral protein synthesis via the phosphorylation of the alpha subunit of eukaryotic initiation factor 2 (eIF2 alpha). However, little is known about the data related to the lower vertebrates, including fish. Recently, the identification of PKR-like, or PKZ, has addressed the question of whether there is an orthologous PKR in fish. Here, we identify the first fish PKR gene from the Japanese flounder Paralichthys olivaceus (PoPKR). PoPKR encodes a protein that shows a conserved structure that is characteristic of mammalian PKRs, having both the N-terminal region for dsRNA binding and the C-terminal region for the inhibition of protein translation. The catalytic activity of PoPKR is further evidence that it is required for protein translation inhibition in vitro. PoPKR is constitutively transcribed at low levels and is highly induced after virus infection. Strikingly, PoPKR overexpression increases eIF2 alpha phosphorylation and inhibits the replication of Scophthalmus maximus rhabdovirus (SMRV) in flounder embryonic cells, whereas phosphorylation and antiviral effects are impaired in transfected cells expressing the catalytically inactive PKR-K421R variant, indicating that PoPKR inhibits virus replication by phosphorylating substrate eIF2 alpha. The interaction between PoPKR and eIF2 alpha is demonstrated by coimmunoprecipitation assays, and the transfection of PoPKR-specific short interfering RNA further reveals that the enhanced eIF2 alpha phosphorylation is catalyzed by PoPKR during SMRV infection. The current data provide significant evidence for the existence of a PKR-mediated antiviral pathway in fish and reveal considerable conservation in the functional domains and the antiviral effect of PKR proteins between fish and mammals.

Microcalorimetric study on the toxic effect of Pb2+ to Tetrahymena

The toxic effect of Pb2+ has been studied in eukaryotic cells by using Tetrahymena as a target. The maximum power (P (m)) and the growth rate constant (k) were determined, which showed that values of P (m) and k were linked to the concentration (C) of Pb2+. The addition of Pb2+ caused a decrease of the maximum heat production and growth rate constant, indicating that Tetrahymena growth was inhibited in the presence of Pb2+, and Pb2+ took part in the metabolism of cells. From micrographs, morphological changes of Tetrahymena were observed with addition of Pb2+, indicating that the toxic effect of Pb2+ derived from destroying the membrane of surface of Tetrahymena. According to the thermogenic curves and photos of Tetrahymena under different conditions, it is clear that metabolic mechanism of Halobacterium halobium R1 growth has been changed with the addition of Pb2+.

The dynamic effect of a piled-foundation building on an incident vibration field from an underground railway tunnel

This paper presents a three-dimensional comprehensive model for the calculation of vibration in a building based on pile-foundation due to moving trains in a nearby underground tunnel. The model calculates the Power Spectral Density (PSD) of the building's responses due to trains moving on floating-slab tracks with random roughness. The tunnel and its surrounding soil are modelled as a cylindrical shell embedded in half-space using the well-known PiP model. The building and its piles are modelled as a 2D frame using the dynamic stiffness matrix. Coupling between the foundation and the ground is performed using the theory of joining subsystems in the frequency domain. The latter requires calculations of transfer functions of a half-space model. A convenient choice based on the thin-layer method is selected in this work for the calculations of responses in a half-space due to circular strip loadings. The coupling considers the influence of the building's dynamics on the incident wave field from the tunnel, but ignores any reflections of building's waves from the tunnel. The derivation made in the paper shows that the incident vibration field at the building's foundation gets modified by a term reflecting the coupling and the dynamics of the building and its foundation. The comparisons presented in the paper show that the dynamics of the building and its foundation significantly change the incident vibration field from the tunnel and they can lead to loss of accuracy of predictions if not considered in the calculation.

The Hartman effect in graphene

We investigate theoretically the Hartman effect in quantum tunneling through single and double barriers in a single graphene layer. The numerical results indicate that the Hartman effect in graphene depends heavily on the incident angle and the energy of the carrier in the tunneling process through single and double barriers. We find that the Hartman effect disappears for normal incidence and appears when the incident angle and energy are larger than some critical values.

Spin-dependent tunneling through a symmetric semiconductor barrier: The Dresselhaus effect

Spin-dependent tunneling through a symmetric semiconductor barrier is studied including the k(3) Dresselhaus effect. The spin-dependent transmission of an electron can be obtained analytically. By comparing with previous work [Phys. Rev. B 67, 201304(R) (2003) and Phys. Rev. Lett. 93, 056601 (2004)], it is shown that the spin polarization and interface current are changed significantly by including the off-diagonal elements in the current operator, and can be enhanced considerably by the Dresselhaus effect in the contact regions.

The Stark effect on excitons in a bilayer system

The Stark effect on excitons in a bilayer system is investigated theoretically within the framework of the effective-mass approximation. The calculations indicate that the energy of the excitons decreases as the value of the in-plane electric field F increases at a fixed value of the distance d between the layers. However, the energy of the excitons increases with d at a fixed value of F. In particular, it increases linearly at small values of d but increases as 1/d at large values. Therefore, it can be concluded that excitons in a bilayer system have a small binding energy equal to the absolute value of the excitonic energy at large d or small F. In addition, the radiative lifetime of heavy-hole excitons in this system is calculated and is found to be short at small values of both F and d. The radiative lifetime of heavy-hole excitons in a bilayer system can be increased by two orders by an in-plane electric field of 2 kV/cm when d is twice the excitonic Rydberg. (c) 2006 American Institute of Physics.

Monte Carlo simulation of the modulated effect induced by the dislocation to the quantum dot growth

Performing an event-based continuous kinetic Monte Carlo simulation, we investigate the modulated effect induced by the dislocation on the substrate to the growth of semiconductor quantum dots (QDs). The relative positions between the QDs and the dislocations are studied. The stress effects to the growth of the QDs are considered in simulation. The simulation results are compared with the experiment and the agreement between them indicates that this simulation is useful to study the growth mode and the atomic kinetics during the growth of the semiconductor QDs. (c) 2006 Elsevier Ltd. All rights reserved.

Optical investigation on the annealing effect and its mechanism of GaInAs/GaNAs quantum wells

Thermal annealing of GaInAs/GaNAs quantum wells (QWs) as well as other nitrogen- and indium-contained QW structures grown by molecular beam epitaxy and its effect on optical properties are investigated. The photoluminescence (PL) and photovoltaic (PV) spectra of annealed GaInAs/GaNAs QWs show that the luminescence properties become degraded due to the N diffusion from the GaNAs barrier layers to the GaInAs well layer. Meantime, the annealing-induced blueshift of the PL peak in this QW system is mainly induced by the change of In distribution, suggesting that the In reorganization is greatly assisted by the N-induced defects. The elucidation of annealing effect in GaInAs/GaNAs QW samples is helpful for a better understanding to the annealing effect in the GaInNAs/GaAs QWs. (C) 2003 Elsevier Science B.V. All rights reserved.

Blocking of the polaron effect and spin-split cyclotron resonance in a two-dimensional electron gas

Cyclotron resonance (CR) of high density GaAs quantum wells exhibits well-resolved spin splitting above the LO-phonon frequency. The spin-up and spin-down CR frequencies are reversed relative to the order expected from simple band nonparabolicity. We demonstrate that this is a consequence of the blocking of the polaron interaction which is a sensitive function of the filling of the Landau levels.

Monte Carlo simulation of the modulated effect induced by the dislocation to the quantum dot growth

Performing an event-based continuous kinetic Monte Carlo simulation, we investigate the modulated effect induced by the dislocation on the substrate to the growth of semiconductor quantum dots (QDs). The relative positions between the QDs and the dislocations are studied. The stress effects to the growth of the QDs are considered in simulation. The simulation results are compared with the experiment and the agreement between them indicates that this simulation is useful to study the growth mode and the atomic kinetics during the growth of the semiconductor QDs. (c) 2006 Elsevier Ltd. All rights reserved.