Optical investigation on the annealing effect and its mechanism of GaInAs/GaNAs quantum wells
Data(s) |
2003
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Resumo |
Thermal annealing of GaInAs/GaNAs quantum wells (QWs) as well as other nitrogen- and indium-contained QW structures grown by molecular beam epitaxy and its effect on optical properties are investigated. The photoluminescence (PL) and photovoltaic (PV) spectra of annealed GaInAs/GaNAs QWs show that the luminescence properties become degraded due to the N diffusion from the GaNAs barrier layers to the GaInAs well layer. Meantime, the annealing-induced blueshift of the PL peak in this QW system is mainly induced by the change of In distribution, suggesting that the In reorganization is greatly assisted by the N-induced defects. The elucidation of annealing effect in GaInAs/GaNAs QW samples is helpful for a better understanding to the annealing effect in the GaInNAs/GaAs QWs. (C) 2003 Elsevier Science B.V. All rights reserved. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Bian LF; Jiang DS; Lu SL .Optical investigation on the annealing effect and its mechanism of GaInAs/GaNAs quantum wells ,JOURNAL OF CRYSTAL GROWTH,2003 ,253 (1-4):155-160 |
Palavras-Chave | #半导体材料 #interdiffusion #post-annealing #quantum wells #GaInNAs/GaAs #MOLECULAR-BEAM EPITAXY #CARRIER LOCALIZATION #GAINNAS #LUMINESCENCE #ORIGIN #GAASN |
Tipo |
期刊论文 |