Monte Carlo simulation of the modulated effect induced by the dislocation to the quantum dot growth


Autoria(s): Zhao C; Chen YH; Zhao M; Zhang CL; Xu B; Yu LK; Sun J; Lei W; Wang ZG
Data(s)

2006

Resumo

Performing an event-based continuous kinetic Monte Carlo simulation, we investigate the modulated effect induced by the dislocation on the substrate to the growth of semiconductor quantum dots (QDs). The relative positions between the QDs and the dislocations are studied. The stress effects to the growth of the QDs are considered in simulation. The simulation results are compared with the experiment and the agreement between them indicates that this simulation is useful to study the growth mode and the atomic kinetics during the growth of the semiconductor QDs. (c) 2006 Elsevier Ltd. All rights reserved.

Performing an event-based continuous kinetic Monte Carlo simulation, we investigate the modulated effect induced by the dislocation on the substrate to the growth of semiconductor quantum dots (QDs). The relative positions between the QDs and the dislocations are studied. The stress effects to the growth of the QDs are considered in simulation. The simulation results are compared with the experiment and the agreement between them indicates that this simulation is useful to study the growth mode and the atomic kinetics during the growth of the semiconductor QDs. (c) 2006 Elsevier Ltd. All rights reserved.

zhangdi于2010-03-29批量导入

zhangdi于2010-03-29批量导入

Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China; Beijing Inst Petrochem & Technol, Dept Math & Phys, Beijing 102617, Peoples R China

Identificador

http://ir.semi.ac.cn/handle/172111/9992

http://www.irgrid.ac.cn/handle/1471x/65997

Idioma(s)

英语

Publicador

ELSEVIER SCI LTD

THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, OXON, ENGLAND

Fonte

Zhao, C (Zhao, C.); Chen, YH (Chen, Y. H.); Zhao, M (Zhao, Man); Zhang, CL (Zhang, C. L.); Xu, B (Xu, B.); Yu, LK (Yu, L. K.); Sun, J (Sun, J.); Lei, W (Lei, W.); Wang, ZG (Wang, Z. G.) .Monte Carlo simulation of the modulated effect induced by the dislocation to the quantum dot growth .见:ELSEVIER SCI LTD .MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, OXON, ENGLAND ,FEB-JUN 2006,9 (1-3): 31-35

Palavras-Chave #半导体材料 #Monte Carlo simulation
Tipo

会议论文