VCSEL to waveguide coupling for optical backplanes

Hybrid OECB (Opto-Electrical Circuit Boards) are expected to make a significant impact in the telecomm switches arena within the next five years, creating optical backplanes with high speed point-to-point optical interconnects. The critical aspect in the manufacture of the optical backplane is the successful coupling between VCSEL (Vertical Cavity Surface Emitting Laser) device and embedded waveguide in the OECB. Optical performance will be affected by CTE mismatch in the material properties, and manufacturing tolerances. This paper will discuss results from a multidisciplinary research project involving both experimentation and modelling. Key process parameters are being investigated using Design of Experiments and Finite Element Modelling. Simulations have been undertaken that predict the temperature in the VCSEL during normal operation, and the subsequent misalignment that this imposes. The results from the thermomechanical analysis are being used with optimisation software and the experimental DOE (Design of Experiments) to identify packaging parameters that minimise misalignment. These results are also imported into an optical model which solves optical energy and attenuation from the VCSEL aperture into, and then through, the waveguide. Results from the thermomechanical and optical models will be discussed as will the experimental results from the DOE.

Propagation of low power low divergence Gaussian fields in unbiased self-defocusing photorefractive media and their interactions

Many optical networks are limited in speed and processing capability due to the necessity for the optical signal to be converted to an electrical signal and back again. In addition, electronically manipulated interconnects in an otherwise optical network lead to overly complicated systems. Optical spatial solitons are optical beams that propagate without spatial divergence. They are capable of phase dependent interactions, and have therefore been extensively researched as suitable all optical interconnects for over 20 years. However, they require additional external components, initially high voltage power sources were required, several years later, high power background illumination had replaced the high voltage. However, these additional components have always remained as the greatest hurdle in realising the applications of the interactions of spatial optical solitons as all optical interconnects. Recently however, self-focusing was observed in an otherwise self-defocusing photorefractive crystal. This observation raises the possibility of the formation of soliton-like fields in unbiased self-defocusing media, without the need for an applied electrical field or background illumination. This thesis will present an examination of the possibility of the formation of soliton-like low divergence fields in unbiased self-defocusing photorefractive media. The optimal incident beam and photorefractive media parameters for the formation of these fields will be presented, together with an analytical and numerical study of the effect of these parameters. In addition, preliminary examination of the interactions of two of these fields will be presented. In order to complete an analytical examination of the field propagating through the photorefractive medium, the spatial profile of the beam after propagation through the medium was determined. For a low power solution, it was found that an incident Gaussian field maintains its Gaussian profile as it propagates. This allowed the beam at all times to be described by an individual complex beam parameter, while also allowing simple analytical solutions to the appropriate wave equation. An analytical model was developed to describe the effect of the photorefractive medium on the Gaussian beam. Using this model, expressions for the required intensity dependent change in both the real and imaginary components of the refractive index were found. Numerical investigation showed that under certain conditions, a low powered Gaussian field could propagate in self-defocusing photorefractive media with divergence of approximately 0.1 % per metre. An investigation into the parameters of a Ce:BaTiO3 crystal showed that the intensity dependent absorption is wavelength dependent, and can in fact transition to intensity dependent transparency. Thus, with careful wavelength selection, the required intensity dependent change in both the real and imaginary components of the refractive index for the formation of a low divergence Gaussian field are physically realisable. A theoretical model incorporating the dependence of the change in real and imaginary components of the refractive index on propagation distance was developed. Analytical and numerical results from this model are congruent with the results from the previous model, showing low divergence fields with divergence less than 0.003 % over the propagation length of the photorefractive medium. In addition, this approach also confirmed the previously mentioned self-focusing effect of the self-defocusing media, and provided an analogy to a negative index GRIN lens with an intensity dependent focal length. Experimental results supported the findings of the numerical analysis. Two low divergence fields were found to possess the ability to interact in a Ce:BaTiO3 crystal in a soliton-like fashion. The strength of these interactions was found to be dependent on the degree of divergence of the individual beams. This research found that low-divergence fields are possible in unbiased self-defocusing photorefractive media, and that soliton-like interactions between two of these fields are possible. However, in order for these types of fields to be used in future all optical interconnects, the manipulation of these interactions, together with the ability for these fields to guide a second beam at a different wavelength, must be investigated.

Dielectric Studies of laser ablated Ca doped BaTiO3 thin films

Recently, there has been growing interest in Ca modified BaTiO3 structures due to their larger electro-optic coefficients for their use in optical storage of information over conventional BaTiO3 crystals. Barium Calcium Titanate (BCT) shows promising applications in advanced laser systems, optical interconnects and optical storage devices. BaTiO3 thin films of varied Ca (3 at. % - 15 at. %) doping were deposited using pulsed laser ablation (KrF excimer laser) technique over Pt/Si substrates. The stoichiometric and the compositional analysis were carried out using EDAX and SIMS. The dielectric studies were done at the frequency regime of 40 Hz to 100 kHz at different ambient temperatures from 200 K to 600 K. The BCT thin films exhibited diffuse phase transition, which was of a typical non lead relaxor behavior and had high dielectric constant and low dielectric loss. The phase transition for the different compositions of BCT thin films was near the room temperature, showing a marked departure from the bulk phase transition. The C - V and the hysteresis behavior confirmed the ferroelectric nature below the phase transition and paraelectric at the room temperature.

自由空间相干光通信技术及发展

对比了相干探测和直接探测，以及自由空间相干光通信和光纤相干通信，对相干自由空间激光通信系统的特点和关键技术进行了讨论，回顾了近年来国外在自由空间相干光通信领域内开展的有关研究计划。最后对相干光通信技术的应用前景进行了展望。

卫星激光通信Ⅰ链路和终端技术

卫星激光通信具有巨大的潜在应用价值, 国际上已实现高码率、小型化、轻量化和低功耗激光通信终端, 全文的第一部分即“链路和终端技术”综述了卫星激光通信的国外进展, 介绍了终端的关键技术, 讨论了终端设计思想。第二部分(另文)将讨论和介绍卫星激光通信终端地面检测和验证技术。

空间激光通信中的分集接收与分集均衡技术

全面对采用空间分集技术和时域Rake接收机分集的带限空间光通信系统的原理进行了模拟和分析，首次在空间激光通信领域提出了综合了分集接收和均衡技术的联合信道均衡器方法，通过计算机仿真分析，研究了不同空间分集方法在非相关空间光开关键控信号下的误比特率，在不同符号间干扰条件下采用rake接收时的误比特率，以及在不同信噪比和不同信道数时采用联合分集均衡的误码率。研究的结果确认联合分集均衡方法能够明显的提高空间光通信系统的性能。

基于RS编码及网格编码调制的光PPM通信纠错技术

分析了RS（Reed-Solomon）纠错码和网格编码调制（Trellis Coded Modulation，TCM）技术在光脉冲位置调制通信中的应用．在此基础上，提出了以RS码作为外码，以网格编码调制技术作为内码，用于光脉冲位置调制通信的新编码方案，能以几乎不减少通信速率的优势，提高传统RS码系统在时变带限光信道中的通信性能．模拟研究了在不同空间光信道条件下，传统RS码的符号正确传输率和误码率，并对网格编码调制的编码增益、RS码与网格编码调制级联时的编码增益进行了仿真研究，证实了本方案的有效性．

空间激光跟瞄中指向驱动电机运动特性研究

设计了一种深空非合作目标的激光扫描、捕获、跟踪地面实验装置,通过模拟深空同轨道运动的两颗卫星跟瞄过程,在理论上计算了跟瞄装置中光束指向驱动电机的最小加速度和其在跟踪过程中的运动特性。理论分析与仿真结果表明,当卫星偏离光斑中心一定距离时,指向驱动电机先加速后减速,补偿这个偏心,重新捕获跟踪卫星;重新捕获到跟踪所需时间受电机加速度和望远镜探测精度以及探测器响应处理时间影响,其中探测器精度对重新捕获到跟踪所需时间影响较大,探测器响应处理时间要减小到最小;为了使从捕获到跟踪过程中卫星始终在扫描光斑范围内,经纬仪驱动电机的最小角加速度为25.5°/s2。

Room temperature all-silicon photonic crystal nanocavity light emitting diode at sub-bandgap wavelengths

Silicon is now firmly established as a high performance photonic material. Its only weakness is the lack of a native electrically driven light emitter that operates CW at room temperature, exhibits a narrow linewidth in the technologically important 1300-1600 nm wavelength window, is small and operates with low power consumption. Here, an electrically pumped all-silicon nano light source around 1300-1600 nm range is demonstrated at room temperature. Using hydrogen plasma treatment, nano-scale optically active defects are introduced into silicon, which then feed the photonic crystal nanocavity to enhance the electrically driven emission in a device via Purcell effect. A narrow (Δλ=0.5 nm) emission line at 1515 nm wavelength with a power density of 0.4mW/cm2 is observed, which represents the highest spectral power density ever reported from any silicon emitter. A number of possible improvements are also discussed, that make this scheme a very promising light source for optical interconnects and other important silicon photonics applications. © 2012 by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

面向硅基光互连应用的无源光子集成器件研究进展

光互连是突破传统微电子IC性能瓶颈的重要技术手段,对推进"后摩尔时代"微电子技术的发展和高性能计算技术的实现具有关键性意义.本文在归纳总结不同层次光互连结构特点的基础上,对片上光互连(on-chip or intra-chip optical interconnects)所涉及的若干种无源光子集成器件的设计制备及性能特点进行了分析介绍,这些器件包括SOI亚波长光子线波导、SOI光子晶体波导、MMI分束/合束器、微环/微盘谐振腔滤波器、光子晶体微腔耦合滤波器、光子晶体反射镜等,是硅基片上光互连的基本构成单元.本文对这些关键性光子集成器件的国内最新研究进展进行了报道.

The Incident Angle Dependence of Quantum Efficiency of GaAs Based RCE Photodetectors

The theoretical analysis and experimental measurement on the incident angle dependence of quantum efficiency of GaAs based resonant cavity enhanced (RCE) photodetector is presented. By changing the angle of incoming light, about 40 nm wavelength variation of peak quantum efficiency is obtained. The peak quantum efficiency and optical bandwidth at different mode corresponding to different angle incidence is characterized with different absorption dependence on wavelength. The convenient angle tuning of resonant mode will be helpful to relax the strict constraint of RCE photodetector to light source with narrow emission spectrum such applications in space optical detections and communications.

16-channel 0.35 mu m CMOS/VCSEL optoelectronic devices

We report some investigations on vertical cavity surface emitting laser (VCSEL) arrays and VCSEL based optoelectronic smart photonic multiple chip modules (MCM), consisting of 1 x 16 vertical cavity surface emitting laser array and 16-channel lasers driver 0.35 mum CMOS circuit. The hybrid integrated multiple chip modules based on VCSEL operate at more than 2GHz in -3dB frequency bandwidth.

Hybrid CMOS/VCSEL optoelectronic modules

We report some investigations on vertical cavity surface emitting laser (VCSEL) arrays and VCSEL based optoelectronic smart photonic multiple chip modules (MCM), consisting of 1x16 vertical cavity surface emitting laser array and 16-channel lasers driver 0.35 Pin CMOS circuit. The hybrid integrated multiple chip modules based on VCSEL operate at more than 2GHz in -3dB frequency bandwidth.

Analysis for the angle dependence of GaAs based RCE photodetectors

The theoretical analysis and experimental measurement on the angle dependence of quantum efficiency of GaAs based resonant cavity enhanced (RCE) photodetector is presented. By changing the angle of incoming light, about 40mn wavelength variation of peak quantum efficiency has been experimentally obtained. The peak quantum efficiency and optical bandwidth at different mode corresponding to different angle incidence have been characterized with different absorption dependence on wavelength. The convenient angle tuning of resonant mode will be helpful to relax the strict constraint of RCE photodetector to light source with narrow emission spectrum while especially applied in space optical detections and communications.

VCSEL based optoelectronic multiple chip modules

We report on optoelectronic multiple chip modules, consisting of vertical cavity surface emitting laser(VCSEL), photodetector and 1.2 mum CMOS electronic circuit, The hybrid integrated components operate at a date rate of 155Mb/s, which could be used in optical interconnects for multiple computers.