Assessment of SET Logic Robustness Through Noise Margin Modeling

A compact model for noise margin (NM) of single-electron transistor (SET) logic is developed, which is a function of device capacitances and background charge (zeta). Noise margin is, then, used as a metric to evaluate the robustness of SET logic against background charge, temperature, and variation of SET gate and tunnel junction capacitances (CG and CT). It is shown that choosing alpha=CT/CG=1/3 maximizes the NM. An estimate of the maximum tolerable zeta is shown to be equal to plusmn0.03 e. Finally, the effect of mismatch in device parameters on the NM is studied through exhaustive simulations, which indicates that a isin [0.3, 0.4] provides maximum robustness. It is also observed that mismatch can have a significant impact on static power dissipation.

Modeling and Analysis of Noise Margin in SET Logic

In this paper the static noise margin for SET (single electron transistor) logic is defined and compact models for the noise margin are developed by making use of the MIB (Mahapatra-Ionescu-Banerjee) model. The variation of the noise margin with temperature and background charge is also studied. A chain of SET inverters is simulated to validate the definition of various logic levels (like VIH, VOH, etc.) and noise margin. Finally the noise immunity of SET logic is compared with current CMOS logic.

Quantum theoretic explanation of the Schwarz-Hora effect

Following the path-integral approach we show that the Schwarz-Hora effect is a one-electron quantum-mechanical phenomenon in that the de Broglie wave associated with a single electron is modulated by the oscillating electric field. The treatment brings out the crucial role played by the crystal in providing a discontinuity in the longitudinal component of the electric field. The expression derived for the resulting current density shows the appropriate oscillatory behaviour in time and distance. The possibility of there being a temporal counterpart of Aharonov-Bohm effect is briefly discussed in this context.

The role of Compton and Raman scattering in the quasar continuum

There are three ways in which an electromagnetic wave can undergo scattering in a plasma: (i) when the scattering of radiation occurs by a single electron, it is called Compton Scattering (CS); (ii) if it occurs by a longitudinal electron plasma mode, it is called Stimulated Raman Scattering (SRS), and (iii) if it occurs by a highly damped electron plasma mode, it is called Stimulated Compton Scattering (SCS). The non-thermal continuum of quasars is believed to be produced through the combined action of synchrotron and inverse Compton processes, which are essentially single-particle processes. Here, we investigate the role of SRS and SCS in the generation of continuum radiation from these compact objects. It is shown as an example that the complete spectrum of 3C 273 can be reproduced by suitably combining SCS and SRS. The differential contributions of SCS and SRS under different values of the plasma parameters are also calculated.

Pumped double quantum dot with spin-orbit coupling

We study driven by an external electric field quantum orbital and spin dynamics of electron in a one-dimensional double quantum dot with spin-orbit coupling. Two types of external perturbation are considered: a periodic field at the Zeeman frequency and a single half-period pulse. Spin-orbit coupling leads to a nontrivial evolution in the spin and orbital channels and to a strongly spin-dependent probability density distribution. Both the interdot tunneling and the driven motion contribute into the spin evolution. These results can be important for the design of the spin manipulation schemes in semiconductor nanostructures.

脉冲啁啾对于阿秒脉冲的影响

采用单电子近似和软核势模型，通过数值求解一维含时薛定谔方程，理论研究了当脉冲分别带有正、负啁啾的情况下所产生的阿秒脉冲，分析了不同脉冲啁啾特性对阿秒脉冲的强度和宽度的影响，研究结果表明，无论是正啁啾还是负啁啾，随着啁啾量的增加，都将使激光脉冲由产生单个阿秒脉冲趋向于产生阿秒脉冲链，正啁啾和负啁啾对于阿秒脉冲宽度的影响是不同的，负啁啾对于阿秒脉冲宽度影响很小，适当的负啁啾有利于缩小阿秒脉冲的宽度；而正啁啾脉冲产生的阿秒脉冲较无啁啾时展宽，且随着啁啾量的增加，其阿秒脉冲宽度迅速增大。

飞秒强激光作用下电子振荡导致的谐波辐射频谱的展宽和红移

采用单电子模型研究了圆偏振飞秒脉冲激光作用下电子振荡导致的谐波辐射频谱的特性。研究发现随着激光强度的增加，电子在激光场中运动的相对论效应可以导致谐波辐射，并且发现谐波辐射频谱随着激光强度的增加发生了展宽和红移。电子与强激光脉冲相互作用，电子除了在激光场的作用下做横向振荡运动之外，激光脉冲的纵向有质动力对电子还有推动作用，这是产生谐波频谱红移的原因，而谐波辐射频谱展宽是由电子纵向速度的变化引起的。分析激光场中电子在不同方向的辐射频谱表明：随着谐波阶数的升高，红移在有规律地变大；在θ=3π／4方向上电子频谱的

Design, Synthesis, and Study of Novel Platforms for Iron-N2 Chemistry and Photoinduced, Copper-mediated C-N Bond Formation

Several new ligand platforms designed to support iron dinitrogen chemistry have been developed. First, we report Fe complexes of a tris(phosphino)alkyl (CP^iPr₃) ligand featuring an axial carbon donor intended to conceptually model the interstitial carbide atom of the nitrogenase iron-molybdenum cofactor (FeMoco). It is established that in this scaffold, the iron center binds dinitrogen trans to the C_alkyl anchor in three structurally characterized oxidation states. Fe-C_alkyl lengthening is observed upon reduction, reflective of significant ionic character in the Fe-C_alkyl interaction. The anionic (CP^iPr₃)FeN₂^- species can be functionalized by a silyl electrophile to generate (CP^iPr₃)Fe-N₂SiR₃. This species also functions as a modest catalyst for the reduction of N₂ to NH₃. Next, we introduce a new binucleating ligand scaffold that supports an Fe(μ-SAr)Fe diiron subunit that coordinates dinitrogen (N₂-Fe(μ-SAr)Fe-N₂) across at least three oxidation states (Fe^IIFe^II, Fe^IIFe^I, and Fe^IFe^I). Despite the sulfur-rich coordination environment of iron in FeMoco, synthetic examples of transition metal model complexes that bind N₂ and also feature sulfur donor ligands remain scarce; these complexes thus represent an unusual series of low-valent diiron complexes featuring thiolate and dinitrogen ligands. The (N₂-Fe(μ-SAr)Fe-N₂) system undergoes reduction of the bound N₂ to produce NH₃ (~50% yield) and can efficiently catalyze the disproportionation of N₂H₄ to NH₃ and N₂. The present scaffold also supports dinitrogen binding concomitant with hydride as a co-ligand. Next, inspired by the importance of secondary-sphere interactions in many metalloenzymes, we present complexes of iron in two new ligand scaffolds ([SiP^NMe₃] and [SiP^iPr₂P^NMe]) that incorporate hydrogen-bond acceptors (tertiary amines) which engage in interactions with nitrogenous substrates bound to the iron center (NH₃ and N₂H₄). Cation binding is also facilitated in anionic Fe(0)-N₂ complexes. While Fe-N₂ complexes of a related ligand ([SiP^iPr₃]) lacking hydrogen-bond acceptors produce a substantial amount of ammonia when treated with acid and reductant, the presence of the pendant amines instead facilitates the formation of metal hydride species.

Additionally, we present the development and mechanistic study of copper-mediated and copper-catalyzed photoinduced C-N bond forming reactions. Irradiation of a copper-amido complex, ((m-tol)₃P)₂Cu(carbazolide), in the presence of aryl halides furnishes N-phenylcarbazole under mild conditions. The mechanism likely proceeds via single-electron transfer from an excited state of the copper complex to the aryl halide, generating an aryl radical. An array of experimental data are consistent with a radical intermediate, including a cyclization/stereochemical investigation and a reactivity study, providing the first substantial experimental support for the viability of a radical pathway for Ullmann C-N bond formation. The copper complex can also be used as a precatalyst for Ullmann C-N couplings. We also disclose further study of catalytic C_alkyl-N couplings using a CuI precatalyst, and discuss the likely role of [Cu(carbazolide)₂]^- and [Cu(carbazolide)₃]^- species as intermediates in these reactions.

Finally, we report a series of four-coordinate, pseudotetrahedral P₃Fe^II-X complexes supported by tris(phosphine)borate ([PhBP₃Fe^R]^-) and phosphiniminato X-type ligands (-N=PR'₃) that in combination tune the spin-crossover behavior of the system. Low-coordinate transition metal complexes such as these that undergo reversible spin-crossover remain rare, and the spin equilibria of these systems have been studied in detail by a suite of spectroscopic techniques.

Electrical detection of trapped charge displacements using an ultra-thin SOI percolation transistor

Electrical detection of solid-state charge qubits requires ultrasensitive charge measurement, typically using a quantum point contact or single-electron-transistor, which imposes strict limits on operating temperature, voltage and current. A conventional FET offers relaxed operating conditions, but the back-action of the channel charge is a problem for such small quantum systems. Here, we discuss the use of a percolation transistor as a measurement device, with regard to charge sensing and backaction. The transistor is based on a 10nm thick SOI channel layer and is designed to measure the displacement of trapped charges in a nearby dielectric. At cryogenic temperatures, the trapped charges result in strong disorder in the channel layer, so that current is constrained to a percolation pathway in sub-threshold conditions. A microwave driven spatial Rabi oscillation of the trapped charge causes a change in the percolation pathway, which results in a measurable change in channel current. © The Electrochemical Society.

Electronic structure in GaAs/AlxGa1-xAs spherical quantum dots

In this paper, how the dots' radius, At concentration and external electric field affect the single electron energy states in GaAs/AlxGa1-xAs spherical quantum dots are discussed in detail. Furthermore, the modification of the energy states is calculated when the difference in effective electron mass in GaAs and AlxGa1-xAs are considered. In addition, both the analytical method and the plane wave method are used in calculation and the results are compared, showing that they are in good agreement with each other. The results and methods can provide useful information for the future research and potential applications of quantum dots.

Compact universal logic gates realized using quantization of current in nanodevices

This paper proposes novel universal logic gates using the current quantization characteristics of nanodevices. In nanodevices like the electron waveguide (EW) and single-electron (SE) turnstile, the channel current is a staircase quantized function of its control voltage. We use this unique characteristic to compactly realize Boolean functions. First we present the concept of the periodic-threshold threshold logic gate (PTTG), and we build a compact PTTG using EW and SE turnstiles. We show that an arbitrary three-input Boolean function can be realized with a single PTTG, and an arbitrary four-input Boolean function can be realized by using two PTTGs. We then use one PTTG to build a universal programmable two-input logic gate which can be used to realize all two-input Boolean functions. We also build a programmable three-input logic gate by using one PTTG. Compared with linear threshold logic gates, with the PTTG one can build digital circuits more compactly. The proposed PTTGs are promising for future smart nanoscale digital system use.

Reduced dynamics with renormalization in solid-state charge qubit measurement

Quantum measurement will inevitably cause backaction on the measured system, resulting in the well-known dephasing and relaxation. In this paper, in the context of solid-state qubit measurement by a mesoscopic detector, we show that an alternative backaction known as renormalization is important under some circumstances. This effect is largely overlooked in the theory of quantum measurement.

Electronic transport through self-assembled quantum disks

In this paper we study a single electron tunneling through a vertically stacked self-assembled quantum disks structure using a transfer matrix technique in the framework of effective mass approximation. In the disks, the electron is confined both laterally and vertically; we separate the motion in the vertical and lateral directions within the adiabatic approximation and treat the energy levels of the latter as an effective confining potential. The influence of a constant applied electric field is taken into account using an exact Airy-function formalism and the current density is calculated at zero temperature. By increasing the widths of the barriers, we find the peaks of the current density shift toward lower voltage region; meanwhile, they can become even sharper. (C) 2004 Elsevier Ltd. All rights reserved.

Photon-assisted Fano resonance and corresponding shot noise in a quantum dot

We have studied the Fano resonance in photon-assisted transport through a quantum dot. Both the coherent current and the spectral density of shot noise have been calculated. It is predicted that the shape of the Fano profile will also appear in satellite peaks. It is found that the variations of Fano profiles with the strengths of nonresonant transmissions are not synchronous in absorption and emission sidebands. The effect of interference on photon-assisted pumped current has also been investigated. We further predict the current and spectral density of shot noise as a periodic function of the phase, which exhibits an intrinsic property of resonant and nonresonant channels in the structures.

Current-voltage characteristics in strongly correlated double quantum dots

We have studied the current-voltage properties of a double quantum dot (DQD) connected by leads in arrangements that vary from series to symmetrical parallel configurations, in the presence of strong intradot Coulomb interaction. The influences of the connecting configurations and the difference between dot levels on the magnitude and symmetry of the total current are examined. We find that the connecting configurations of the dots can determine the number of the current paths and in turn determine the magnitude of the current, while the coupling strengths between the dots and the leads together with the difference of dot levels determine the current-voltage symmetry. The negative differential conductance observed in serial DQD can be explained in terms of the reduction of the current paths. (c) 2005 American Institute of Physics.