Electronic structure in GaAs/AlxGa1-xAs spherical quantum dots


Autoria(s): Wang, CD
Data(s)

2008

Resumo

In this paper, how the dots' radius, At concentration and external electric field affect the single electron energy states in GaAs/AlxGa1-xAs spherical quantum dots are discussed in detail. Furthermore, the modification of the energy states is calculated when the difference in effective electron mass in GaAs and AlxGa1-xAs are considered. In addition, both the analytical method and the plane wave method are used in calculation and the results are compared, showing that they are in good agreement with each other. The results and methods can provide useful information for the future research and potential applications of quantum dots.

Identificador

http://ir.semi.ac.cn/handle/172111/6838

http://www.irgrid.ac.cn/handle/1471x/63157

Idioma(s)

中文

Fonte

Wang, CD .Electronic structure in GaAs/AlxGa1-xAs spherical quantum dots ,ACTA PHYSICA SINICA,2008 ,57(2): 1091-1096

Palavras-Chave #半导体物理 #spherical quantum dot #analytical method #plane wave method #effective mass
Tipo

期刊论文