Fabrication and characterization of active and sequential circuits utilizing Schottky-wrap-gate-controlled GaAs hexagonal nanowire network structures

For realization of hexagonal BDD-based digital systems, active and sequential circuits including inverters, flip flops and ring oscillators are designed and fabricated on GaAs-based hexagonal nanowire networks controlled by Schottky wrap gates (WPGs), and their operations are characterized. Fabricated inverters show comparatively high transfer gain of more than 10. Clear and correct operation of hexagonal set-reset flip flops (SR-FFs) is obtained at room temperature. Fabricated hexagonal D-type flip flop (D-FF) circuits integrating twelve WPG field effect transistors (FETs) show capturing input signal by triggering although the output swing is small. Oscillatory output is successfully obtained in a fabricated 7-stage hexagonal ring oscillator. Obtained results confirm that a good possibility to realize practical digital systems can be implemented by the present circuit approach.

Whispering-gallery microcavity semiconductor lasers suitable for photonic integrated circuits and optical interconnects

The characteristics of whispering-gallery-like modes in the equilateral triangle and square microresonators are introduced, including directional emission triangle and square microlasers connected to an output waveguide. We propose a photonic interconnect scheme by connecting two directional emission microlasers with an optical waveguide on silicon integrated circuit chip. The measurement indicates that the triangle microlasers can work as a resonance enhanced photodetector for optical interconnect.

Design of two-dimensional photonic crystal edge emitting laser for photonic integrated circuits

An edge emitting laser based on two-dimensional photonic crystal slabs is proposed. The device consists of a square lattice microcavity, which is composed of two structures with the same period but different radius of air-holes, and a waveguide. In the cavity, laser resonance in the inner structure benelits from not only the anomalous dispersion characteristic of the first band-edge at the M point in the first Brillouin-zone but also zero photon states in the outer structure. A line defect waveguide is introduced in the outer structure for extracting photons from the inner cavity. Three-dimensional finite-difference time-domain simulations apparently show the in-plane laser output from the waveguide. The microcavity has an effective mode volume of about 3.2(lambda/eta(slab))(3) for oscillation -mode and the quality factor of the device including line defect waveguide is estimated to be as high as 1300.

Magnetic properties and rectifying behaviour of silicon doped with gadolinium

The magnetic/nonmagnetic p-n junction was prepared by implanting gadolinium into the n-type silicon with low-energy dual-ion-beam epitaxy technology. The magnetic layer GdxSi1-x shows excellent magnetic properties at room temperature. High magnetic moment 10mu(B) per Gd atom is observed, which is interpreted by RKKY mechanism. Magnetic/nonmagnetic p-n junctions show rectifying behaviour, but no magnetoresistance is observed.

Mode analysis of photonic crystal polarization beam splitter and its application in integrated circuits design - art. no. 698437

In this work, the guided modes of a photonic crystal polarization beam splitter (PC-PBS) are studied. We demonstrate that the transmission of a low-loss photonic crystal 120 degrees waveguide bend integrated with the PBS will be influenced if the PBS is multi-moded. We propose a single-moded PC-PBS structure by introducing deformed structures, and it shows twice the enhancement of the transmission. This device with remarkable improvement of performance is promising in the use of photonic crystal integrated circuits design.

Low Power Integrated Circuits for Wireless Neural Recording Applications

A group of prototype integrated circuits are presented for a wireless neural recording micro-system. An inductive link was built for transcutaneous wireless power transfer and data transmission. Power and data were transmitted by a pair of coils on a same carrier frequency. The integrated receiver circuitry was composed of a full-wave bridge rectifier, a voltage regulator, a date recovery circuit, a clock recovery circuit and a power detector. The amplifiers were designed with a limited bandwidth for neural signals acquisition. An integrated FM transmitter was used to transmit the extracted neural signals to external equipments. 16.5 mW power and 50 bps - 2.5 Kbps command data can be received over 1 MHz carrier within 10 mm. The total gain of 60 dB was obtained by the preamplifier and a main amplifier at 0.95Hz - 13.41 KHz with 0.215 mW power dissipation. The power consumption of the 100 MHz ASK transmitter is 0.374 mW. All the integrated circuits operated under a 3.3 V power supply except the voltage regulator.

Potential light source for photonic integrated circuits based on the equilateral triangle resonator

The semiconductor microlasers based on the equilateral triangle resonator (ETR) can be fabricated from the edge-emitting laser wafer by dry-etching technique, and the directional emission can be obtained by connecting an output waveguide to one of the vertices of the ETR. We investigate the mode characteristics, especially the mode quality factor, for the ETR with imperfect vertices, which is inevitable in the real technique process. The numerical simulations show that the confined modes can still have a high quality factor in the ETR with imperfect vertices. We can expect that the microlasers is a suitable light source for photonic integrated circuits.

Silicon: the promising material for phontonic integrated circuits platform

The development of optical network demands integrated arid multiple functionality modules to lowing cost and acquire highly reliability. Among the various contender materials to be photonic integrated circuits platform, silicon exhibits dominant characteristics and is the most promising platform materials. The paper compares the characteristics of some candidate materials with silicon and reviews recent progress in silicon based photonic integration technology. Tile challenges to silicon for optical integration for optical networking application arc also indicated.

Thermal rectifying effect in macroscopic size

We address the problem of the rectifying effect of heat conduction at macroscopic size. A design for a macroscopic thermal rectifier based on the macroscopic thermal conductivity of materials is introduced, and then realizations of the design are shown by numerical simulations and phenomenological estimations.

Organic heterojunction with reverse rectifying characteristics and its application in field-effect transistors

A diode with a reverse rectifying characteristics was fabricated based on the organic heterojunction of copper phthalocyanine (CuPc) and copper-hexadecafluoro-phthalocyanine (F16CuPc). At the heterojunction interface, HOMO of CuPc is bended upwards and LUMO of F16CuPc is bended downwards, since the charge carriers were accumulated at both side of the interface, electrons in F16CuPc and holes in CuPc. The thickness of holes accumulated at the CuPc layer is about 10 nm. which was determined by fabricating organic field-effect transistors with active layers in series of thickness. By utilizing the heterojunction-effect, the threshold voltage in organic transistors can be modified.

Networks with hexagonal circuits in co-ordination polymers of metal ions (Zn-II, Cd-II) with 1,1 '-(1,4-butanediyl)bis(imidazole)

Three new compounds, [ZnL1.5(H2O)(SO4)]. 6H(2)O 1, [ZnL1.5(H2O)(2)][NO3](2). 2H(2)O 2 and [CdL1.5(H2O)(2)(SO4)]. 4H(2)O 3 were obtained from self-assembly of the corresponding metal salts with 1,1'-(1,4-butanediyl)bis(imidazole) (L). In both 1 and 2 zinc ion is five-co-ordinated, showing a less-common trigonal bipyramidal co-ordination polyhedron, while cadmium ion of 3 is six-co-ordinated with a common octahedral arrangement. The sulfate ions of 1 and 3 are co-ordinated, however the nitrate ions of 2 are not. Each of the three compounds is composed of a (6, 3) network with the hexagonal smallest circuit containing six metal ions and six L; each L is co-ordinated to two metal ions, acting as a bridging ligand. In 1 the 2-D sheet of (6, 3) networks is interpenetrated in an inclined mode by symmetry related, identical sheets to give an interlocked 3-D structure, while the (6, 3) networks of both 2 and 3 stack in a parallel fashion to construct frameworks having channels.