Passive Q-switching modelocked Yb3+-doped fibre laser with GaAs absorber grown at low temperature

GaAs absorber was grown at low temperature (550degreesC) by metal organic chemical vapour deposition (MOCVD) and was used as an output coupler with which we realized Q-switching modelocked Yb3+-doped fibre laser. The shortest period of the envelope of the Q-switched modelocking is about 3mus. The modelocking threshold is 4.27W and the highest average output pulse power is 290 mW. The modelocking frequency is 12 MHz.

Simultaneous Q switching and mode locking with narrow envelope width in a microchip Nd : YVO4 laser with a composite semiconductor absorber

By using a composite semiconductor absorber and an output coupler, we demonstrated a Q-switched and mode-locked diode-pumped microchip Nd:YVO4 laser. With a 350-mu m-thick crystal, the width of the Q-switched envelope was as short as 12 ns; the repetition rate of the mode-locked pulses inside the Q-switched pulse was more than 10 GHz. The average output power was 335 mW at a maximum pump power of 1.6 W. Q-switched envelope widths of 21 and 31 ns were also achieved with crystals 0.7 and 1.0 mm thick, respectively.

Passive Q-switching of diode-pumped Yb:YAG microchip laser with ion-implanted GaAs

We reported a passive Q-switched diode laser pumped Yb:YAG microchip laser with an ion-implanted semi-insulating GaAs wafer. The wafer was implanted with 400-keV As^(+) in the concentration of 10^(16) ions/cm^(2). To decrease the non-saturable loss, we annealed the ion-implanted GaAs at 500 oC for 5 minutes and coated both sides of the ion-implanted GaAs with antireflection (AR) and highreflection (HR) films, respectively. Using GaAs wafer as an absorber and an output coupler, we obtained 52-ns pulse duration of single pulse.

Passive Q-Switching in a Flash-Lamp Pumped Nd∶YAG Laser with Ion-Implanted GaAs Wafer

A passive Q-switched flash-lamp-pumped Nd:YAG laser with the ion-implanted semi-insulating GaAs water is reported．The wafer is implanted with 400keV As~+ ions in the concentration of 10~(16)cm~(-2). Using GaAs wafer as an absorber and an output coupler．62ns pulse duration of single pulse is obtained.

Grado de aclaramiento de tatuajes y eventos adversos, posterior a una sesión con láser q-switch

Introducción: Los resultados de la remoción de tatuajes con láser de sesión a sesión según los parámetros utilizados son limitados en la literatura. Objetivo: Evaluar los cambios en el aclaramiento de tatuajes y factores asociados posterior a una sesión con láser y los efectos adversos. Materiales y Métodos: Estudio longitudinal retrospectivo de antes y después de 1 sesión de con láser para remoción de tatuajes, donde se determinaron parámetros del tratamiento, aclaramiento y efectos adversos. Resultados: Se evaluaron 35 pacientes para un total de 98 sesiones, fototipo de piel II y IV. Equipos utilizados laser Q-Switch Nd Yag 1064 (83.3%), láser Q-Switch Nd YAG 532(11.3%) y laser Q-Switch Rubí (4.1%). El aclaramiento posterior a la sesión de láser fue evaluado por dos evaluadores independientes, mostrando concordancia significativa (Kappa de 0.615, p<0.001), con aclaración en un 96% de los tatuajes después de la sesión de láser. (p< 0.001). Se encontraron cambios significativos entre la densidad de energía aplicada y las categorías de aclaramiento de la escala de 0 a 3, siendo a mayor densidad mayor el nivel de aclaramiento (p= 0.05). No se encontró asociación significativa entre el número de pases y el aclaramiento del tatuaje. Los efectos adversos fueron del 5.4%. Cicatriz 2%, hiperpigmentación 2% y hipopigmentación 1%. Conclusión: Posterior a una sesión de remoción de tatuajes con láser Q-Switch hay un aclaramiento significativo en un 96% asociado con la densidad de energía, a mayor densidad de energía mayor el nivel de aclaramiento y no al número de pases realizados.

Mid-infrared passively switched pulsed dual wavelength Ho3+ -doped fluoride fiber laser at 3 μm and 2 μm

Cascade transitions of rare earth ions involved in infrared host fiber provide the potential to generate dual or multiple wavelength lasing at mid-infrared region. In addition, the fast development of saturable absorber (SA) towards the long wavelengths motivates the realization of passively switched mid-infrared pulsed lasers. In this work, by combing the above two techniques, a new phenomenon of passively Q-switched ~3 μm and gain-switched ~2 μm pulses in a shared cavity was demonstrated with a Ho3+-doped fluoride fiber and a specifically designed semiconductor saturable absorber (SESAM) as the SA. The repetition rate of ~2 μm pulses can be tuned between half and same as that of ~3 μm pulses by changing the pump power. The proposed method here will add new capabilities and more flexibility for generating mid-infrared multiple wavelength pulses simultaneously that has important potential applications for laser surgery, material processing, laser radar, and free-space communications, and other areas.

Formation of crystalline diamond from amorphous diamond-like carbon films by pulsed laser irradiation

The formation of crystalline diamond films from amorphous diamond-like carbon films by pulsed laser irradiation with a 300 μs non-Q-switched Nd:YAG laser has been established by a combined study of transmission electron microscopy, x-ray photoelectron spectroscopy, and electrical resistivity. The films have been prepared by glow discharge decomposition of a mixture of propane, n-butane, and hydrogen in a rf plasma operating at a frequency of 13.56 MHz. Prior to laser irradiation, the films have been found to be amorphous by transmission electron microscope studies. After irradiation, the electron diffraction patterns clearly point out the formation of cubic diamond structure with a lattice spacing of 3.555 Å. However, the close similarity between diamond and graphite electron diffraction patterns could sometimes be misleading regarding the formation of a diamond structure, and hence, x-ray photoelectron spectroscopic studies have been carried out to confirm the results. A chemical shift in the C 1s core level binding energies towards higher values, viz., from 286.5 to 287.8 eV after laser irradiation, and a high electrical resistivity >1013 Ω cm are consistent with the growth of diamond structure. This novel "low-temperature, low-pressure" synthesis of diamond films offers enormous potential in terms of device compatibility with other solid-state devices.

Laser damage threshold studies on urea L-malic acid: A nonlinear optical crystal

A detailed study of surface laser damage performed on a nonlinear optical crystal, urea L-malic acid, using 7 ns laser pulses at 10 Hz repetition rate from a Q-switched Nd:YAG laser at wavelengths of 532 and 1064 nm is reported. The single shot and multiple shot surface laser damage threshold values are determined to be 26.64±0.19 and 20.60±0.36 GW cm−2 at 1064 nm and 18.44±0.31 and 7.52±0.22 GW cm−2 at 532 nm laser radiation, respectively. The laser damage anisotropy is consistent with the Vickers mechanical hardness measurement performed along three crystallographic directions. The Knoop polar plot also reflects the damage morphology. Our investigation reveals a direct correlation between the laser damage profile and hardness anisotropy. Thermal breakdown of the crystal is identified as the possible mechanism of laser induced surface damage.

Visualization of coherent structures in turbulent subsonic jet using planar laser induced fluorescence of acetone

In this paper, we present the molecular density distribution measurement in turbulent nitrogen jet (Re approximate to 3 x 10(3)), using acetone as molecular tracer. The tracer was seeded in the nitrogen jet by purging through the liquid acetone at ambient temperature. Planar laser sheet of 266 nm wavelength from frequency quadrupled, Q-switched, Nd:YAG laser was used as an excitation source. Emitted fluorescence images of jet flow field were recorded on CMOS camera. The dependence of planar laser induced fluorescence (PLIF) intensity on acetone vapor density was used to convert PLIF image of nitrogen jet into the density image on pixel-by-pixel basis. Instantaneous quantitative density image of nitrogen jet, seeded with acetone, was obtained. The arrowhead-shaped coherent turbulent structures were observed in the present work. It was found that coherent structures were non-overlapping with separate boundaries. Breaking of coherent structures into turbulence was clearly observed above four times jet width.

Gas Phase Oxygen Quenching Studies of Ketone Tracers for Laser-Induced Fluorescence Applications in Nitrogen Bath Gas

In this paper we report the quantitative oxygen quenching effect on laser-induced fluorescence of acetone, methyl ethyl ketone, and 3-pentanone at low pressures (approximate to 700torr) with oxygen partial pressures up to 450torr. Nitrogen was used as a bath gas in which these molecular tracers were added in different quantities according to their vapor pressure at room temperature. These tracers were excited by using a frequency-quadrupled, Q-switched, Nd:YAG laser (266nm). Stern-Volmer plots were found to be linear for all the tracers, suggesting that quenching is collisional in nature. Stern-Volmer coefficients (k(sv)) and quenching rate constants (k(q)) were calculated from Stern-Volmer plots. The effects of oxygen on the laser-induced fluorescence of acetone, methyl ethyl ketone, and 3-pentanone were compared with each other. Further, the Smoluchowski theory was used to calculate the quenching parameters and compared with the experimental results.

Enhanced nonlinear optical properties of graphene oxide-silver nanocomposites measured by Z-scan technique

Nonlinear optical properties (NLO) of a graphene oxide-silver (GO-Ag) nanocomposite have been investigated by the Z-scan setup at Q-switched Nd:YAG laser second harmonic radiation i.e., at 532 nm excitation in a nanosecond regime. A noteworthy enhancement in the NLO properties in the GO-Ag nanocomposite has been reported in comparison with those of the synthesized GO nanosheet. The extracted value of third order nonlinear susceptibility (chi(3)), at a peak intensity of I-0 = 0.2 GW cm(-2), for GO-Ag has been found to be 2.8 times larger than that of GO. The enhancement in NLO properties in the GO-Ag nanocomposite may be attributed to the complex energy band structures formed during the synthesis which promote resonant transition to the conduction band via surface plasmon resonance (SPR) at low laser intensities and excited state transition (ESA) to the conduction band of GO at higher intensities. Along with this photogenerated charge carriers in the conduction band of silver or the increase in defect states during the formation of the GO-Ag nanocomposite may contribute to ESA. Open aperture Z-scan measurement indicates reverse saturable absorption (RSA) behavior of the synthesized nanocomposite which is a clear indication of the optical limiting (OL) ability of the nanocomposite.

Laser drilling improving circuit board manufacturing

We reported here a novel technique for laser high speed drillings on Printed Circuit Boards (PCBs). A CNC solid laser based system is developed to drill through and blind vias as an alternative to mechanical drilling. The system employs an Acousto-Optic Q-switched Nd: YAG laser, a computer control system and an X-Y moving table which can handle up to 400 x 400 mm PCB. With a special designed cavity the laser system works in a pulsed operation in order to generate pulses with width down to 0.5 mu s and maximum peak power over 10kW at 10k repetition rate. Delivered by an improved optical beam transforming system, the focused laser beam can drill hobs including blind vias on PCBs with diameter in the range of 0.1 - 0.4 mm and at up to 300 - 500 vias per second (depending on the construction of PCBs). By means of a CNC X-Y moving system, laser pulses with pulse-to-pulse superior repeatability can be fired at desired location on a PCBs with high accuracy. This alternative technology for drilling through or blind vias on PCBs or PWBs (printed wiring boards) will obviously enhance the capability to printed boards manufacturing.

169 GHz repetition rate passively harmonically mode-locked VECSEL emitting 265 fs pulses

High repetition rate passively mode-locked sources are of significant interest due to their potential for applications including optical clocking, optical sampling, communications and others. Due to their short excited state lifetimes mode-locked VECSELs are ideally suited to high repetition rate operation, however fundamentally mode-locked quantum well-based VECSELs have not achieved repetition rates above 10 GHz due to the limitations placed on the cavity geometry by the requirement that the saturable absorber saturates more quickly than the gain. This issue has been overcome by the use of quantum dot-based saturable absorbers with lower saturation fluences leading to repetition rates up to 50 GHz, but sub-picosecond pulses have not been achieved at these repetition rates. We present a passively harmonically mode-locked VECSEL emitting pulses of 265 fs duration at a repetition rate of 169 GHz with an output power of 20 mW. The laser is based around an antiresonant 6 quantum well gain sample and is mode-locked using a semiconductor saturable absorber mirror. Harmonic modelocking is achieved by using an intracavity sapphire etalon. The sapphire then acts as a coupled cavity, setting the repetition rate of the laser while still allowing a tight focus on the saturable absorber. RF spectra of the laser output show no peaks at harmonics of the fundamental repetition rate up to 26 GHz, indicating stable harmonic modelocking. Autocorrelations reveal groups of pulses circulating in the cavity as a result of an increased tendency towards Q-switched modelocking due to the low pulse energies.

Laser action from 1,3,5,7-tetramethyl-2,6-diethyl-8-n-propyl pyrromethene-BF2

We measured spectroscopic and laser action properties of a novel 8-position substituted pyrromethene-BF2, namely 1,3,5,7-tetramethyl-2,6-diethyl-8-n-propyl pyrromethene-BF2 complex. The laser action was performed with the corresponding dye solution in ethanol, which was placed in a Littman-type laser cavity pumped by the second harmonic of a Q-switched Nd:YAG laser. The spectroscopic measurements clearly indicated that the corresponding dye solution in ethanol exhibited intense absorption in the visible spectral region with large fluorescence quantum yield. It possesses rather low triplet-triplet absorption in the spectral region 460-550 nm and almost negligible triplet-triplet absorption in the lasing spectral region. As a consequence, it lases nearly as efficiently as commercially available benchmark laser dyes such as Rhodamine-6G and outperformed them in wavelength tunability in our laser cavity and pump geometry. (C) 2002 Optical Society of America.

1ps passively mode-locked laser operation of Na, Yb : CaF2 crystal

Diode-pumped passively mode-locked laser operation of Yb3+,Na+:CaF2 single crystal has been demonstrated for the first time. By using a SESAM ( semiconductor saturable mirror), simultaneous transform-limited 1-ps passively mode-locked pulses, with the repetition rate of 183MHz, were obtained under the self-Q-switched envelope induced by the laser medium. The average output power of 360mW was attained at 1047nm for 3.34W of absorbed power at 976nm, and the corresponding pulse peak power arrived at 27kW, indicating the promising application of Yb3+,Na+-codoped CaF2 crystals in achieving ultra-short pulses and high pulse peak power. (c) 2005 Optical Society of America.