Passive Q-Switching in a Flash-Lamp Pumped Nd∶YAG Laser with Ion-Implanted GaAs Wafer
| Data(s) |
2004
|
|---|---|
| Resumo |
A passive Q-switched flash-lamp-pumped Nd:YAG laser with the ion-implanted semi-insulating GaAs water is reported．The wafer is implanted with 400keV As~+ ions in the concentration of 10~(16)cm~(-2). Using GaAs wafer as an absorber and an output coupler．62ns pulse duration of single pulse is obtained. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Wang Yonggang;Li Chaoyang;Ma Xiaoyu;Zhang Zhigang.Passive Q-Switching in a Flash-Lamp Pumped Nd∶YAG Laser with Ion-Implanted GaAs Wafer,半导体学报,2004,25(2):148-151 |
| Palavras-Chave | #半导体器件 |
| Tipo |
期刊论文 |
