Textured PbZr0.3Ti0.7O3 thin films produced by polymeric precursor method using microwave oven

PbZr0.3Ti0.7O3 (PZT) films were produced by polymeric precursor route and deposited by spin-coater technique on Pt(111)/Ti/SiO2/Si(100) substrates. The films were heat-treated using different furnaces: (a) a conventional furnace, at 700 degrees C; and (b) a domestic microwave oven, at 600 degrees C. The X-ray patterns revealed that both films are single phase and reflections were identified as belongs to the PZT phase. The intensity of these reflections showed a (111), (001) and (100) preferred orientation. Morphological and electrical characterizations showed that all samples present a rather different microstructure and both with high spontaneous polarization.

Low temperature synthesis and electrical properties of PbTiO3 thin films prepared by the polymeric precursor method

Ferroelectric PbTiO3 thin films were successfully prepared on a Pt(111)Ti/SiO2/Si(100) substrate for the first time by spin coating, using the polymeric precursor method. X-ray diffraction patterns of the films indicate that they are polycrystalline in nature. This method allows low temperature (500 degrees C) synthesis and high electrical properties. The multilayer PbTiO3 thin films were granular in structure with a grain size of approximately 110-120 nm. A 380-nm-thick film was obtained by carrying out four cycles of the spin-coating/heating process. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) analyses showed the surface of these thin films to be smooth, dense and crack-free with low surface roughness (=3.4 nm). At room temperature and at a frequency of 100 kHz, the dielectric constant and the dissipation factor were, respectively, 570 and 0.016. The C-V characteristics of perovskite thin film prepared at low temperature show normal ferrolectric behavior. The remanent polarization and coercive field for the films deposited were 13.62 mu C/cm(2) and 121.43 kV/cm, respectively. The high electrical property values are attributed to the excellent microstrutural quality and chemical homogeneity of thin films obtained by the polymeric precursor method. (C) 2000 Elsevier B.V. S.A. All rights reserved.

Ferroelectric characteristics of BiFeO3 thin films prepared via a simple chemical solution deposition

BiFeO3 (BFO) thin films were fabricated on Pt(111)/Ti/SiO2/Si substrates by using a polymeric precursor solution under appropriate crystallization conditions. The capacitance dependence on voltage is strongly nonlinear, confirming the ferroelectric properties of the films resulting from the domain switching. The leakage current density increases with annealing temperature. The polarization electric field curves could be obtained in BFO films annealed at 500 degrees C, free of secondary phases. X-ray photoelectron spectroscopy spectra of films annealed at 500 degrees C indicated that the oxidation state of Fe was purely 3+, demonstrating that our films possess stable chemical configurations. (c) 2007 American Institute of Physics.

Dielectric properties and microstructure of SrTiO3/BaTiO3 multilayer thin films prepared by a chemical route

Multilayer thin films with perovskite structures were produced by the polymeric precursor method. SrTiO3/BaTiO3 (STO/BTO) multilayers were deposited on Pt(111)/Ti/SiO2/Si(100) substrates by the spin-coating technique and heated in air at 700 degreesC. The microstructure and crystalline phase of the multilayered thin films were examined by field-emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), resolution-high transmission electron microscopy (HRTEM), atomic force microscopy (AFM) and X-ray diffraction. The SrTiO3/BaTiO3 multilayer thin films consisted of grainy structures with an approximate grain size of 60 nm. The multilayered thin films showed a very clear interface between the components. The SrTiO3/BaTiO3 multilayer thin films revealed dielectric constants of approximately 527 and loss tangents of 0.03 at 100 kHz. The dielectric constant calculated for this multilayer film system is the value of the sum of each individual component of the film, i.e. The total value of the sum of each SrTiO3 (STO) and BaTiO3 (BTO) layer. The multilayer SrTiO3/BaTiO3 obtained by the polymeric precursor method, also showed a ferroelectric behavior with a remanent polarization of 2.5 muC/cm(2) and a coercive field of 30 kV/cm. The multilayer films displayed good fatigue characteristics under bipolar stressing after application of 10(10) switching cycles. (C) 2001 Published by Elsevier B.V. B.V. All rights reserved.

Microstructure and electrical properties of perovskite (Pb, La)TiO3 thin film deposited at low temperature by the polymeric precursor method

High-quality (Pb, La)TiO3 ferroelectric thin films were successfully prepared on a Pt(111)/Ti/SiO2/Si(100) substrate for the first time by spin coating, using the polymeric precursor method. The X-ray diffraction patterns show that the films are polycrystalline in nature. This method allows for low temperature (500 degrees C) synthesis, a high quality microstructure and superior dielectric properties. The effects on the microstructure and electrical properties were studied by changing the La content. The films annealed at 500 degreesC have a single perovskite phase with only a tetragonal or pseudocubic structure. As the La content is increased, the dielectric constant of PLT thin films increases from 570 up to 1138 at room temperature. The C-V and P-E characteristics of perovskite thin films prepared at a low temperature show normal ferroelectric behavior, representing the ferroelectric switching property. The remanent polarization and coercive field of the films deposited decreased due to the transformation from the ferroelectric to the paraelectric phase with an increased La content. (C) 2001 Kluwer Academic Publishers.

Strain behavior of lanthanum modified BiFeO3 thin films prepared via soft chemical method

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Crystallization and optical properties of CCTO thin films under pressure influence

CCTO thin films were deposited on Pt(111)/Ti/SiO 2/Si substrates using a chemical (polymeric precursor) and pressure method. The pressure effects on the CCTO thin films were evaluated by XRD, FEG-SEM and optical properties. Pressure films were found to be more homogeneous and dense than chemical deposition films. Pressure also leaded to an increase in the photoluminescence emission; it is suggested that the displacement of Ti in the titanate clusters, favors the charge transference from TiO 6 to [TiO 5V o z], TiO 5V o z] to [CaO 11V o z] and [TiO 5V o z] to [CuO 4] x. The low synthesis temperature used in the pressure method allows the deposition of films on less expensive substrates (i.e. glass, aluminum, polymer and others).

Thickness dependence of structure and piezoelectric properties at nanoscale of polycrystalline PZT thin films

Lead zirconate titanate Pb(Zr 0.50Ti 0.50)O 3 (PZT) thin films were deposited by a polymeric chemical method on Pt(111)/Ti/SiO2/Si substrates to understand the mechanisms of phase transformations and the effect of film thickness on the structure, dielectric and piezoelectric properties in these films. PZT films pyrolyzed at temperatures higher than 350 °C present a coexistence of pyrochlore and perovskite phases, while only perovskite phase grows in films pyrolyzed at temperatures lower than 300 °C. For pyrochlore-free PZT thin films, a small (100) orientation tendency near the film-substrate interface was observed. Finally, we demonstrate the existence of a self-polarization effect in the studied PZT thin films. Results suggest that Schottky barriers and/or mechanical coupling near the filmsubstrate interface are not primarily responsible for the observed self-polarization effect in our films. © 2012 IEEE.

Piezoresponse force microscopy characterization of rare-earth doped BiFeO3 thin films grown by the soft chemical method

The multiferroic behavior with ion modification using rare-earth cations on crystal structures, along with the insulating properties of BiFeO3 (BFO) thin films was investigated using piezoresponse force microscopy. Rare-earth-substituted BFO films with chemical compositions of (Bi 1.00-xRExFe1.00O3 (x=0; 0.15), RE=La and Nd were fabricated on Pt (111)/Ti/SiO2/Si substrates using a chemical solution deposition technique. A crystalline phase of tetragonal BFO was obtained by heat treatment in ambient atmosphere at 500 °C for 2 h. Ion modification using La3+ and Nd3+ cations lowered the leakage current density of the BFO films at room temperature from approximately 10-6 down to 10-8 A/cm2. The observed improved magnetism of the Nd3+ substituted BFO thin films can be related to the plate-like morphology in a nanometer scale. We observed that various types of domain behavior such as 71° and 180° domain switching, and pinned domain formation occurred. The maximum magnetoelectric coefficient in the longitudinal direction was close to 12 V/cm Oe. © 2012 Elsevier Ltd and Techna Group S.r.l.

Thickness dependence of structure and piezoelectric properties at nanoscale of polycrystalline lead zirconate titanate thin films

Lead zirconate titanate Pb(Zr0.50Ti0.50)O3 (PZT) thin films were deposited by a polymeric chemical method on Pt(111)/Ti/SiO2/Si substrates to understand the mechanisms of phase transformations and the effect of film thickness on the structure, dielectric, and piezoelectric properties in these films. PZT films pyrolyzed at temperatures higher than 350 °C present a coexistence of pyrochlore and perovskite phases, while only perovskite phase grows in films pyrolyzed at temperatures lower than 300 °C. For pyrochlore-free PZT thin films, a small (100)-orientation tendency near the film-substrate interface was observed. Finally, we demonstrate the existence of a self-polarization effect in the studied PZT thin films. The increase of self-polarization with the film thickness increasing from 200 nm to 710 nm suggests that Schottky barriers and/or mechanical coupling near the film-substrate interface are not primarily responsible for the observed self-polarization effect in our films. © 2013 AIP Publishing LLC.

Propriedades magnéticas de nanoestruturas adsorvidas em superfícies metálicas

Neste trabalho, utilizamos o método de primeiros princípios RS-LMTO-ASA (Real Space – Linear Muffin-Tin Orbital - Atomic Sphere Approximation) baseado na Teoria do Funcional da Densidade (DFT - Density Functional Theory) e implementado para o cálculo de estruturas magnéticas não-colineares, para investigar as propriedades magnéticas de nanoestruturas adsorvidas em superfícies metálicas. Consideramos aglomerados com diferentes geometrias e tamanhos como adátomos, dímeros, trímeros, nanofios e nanoestruturas de geometria triangular de Fe, Fe-Co e Fe-Pt adsorvidos sobre a superfície de Pt(111) e tratamos também nanoestruturas de Mn sobre a superfície de Ag(111). Mostramos que os nanofios de Fe-Co sobre a superfície de Pt(111) apresentam um ordenamento ferromagnético. Devido à redução do número de coordenação presente na superfície, os momentos de spin e orbital nos sítios de Fe e Co mostram-se elevados comparados com os respectivos valores dos momentos destes metais como bulk. Analisamos também como estes momentos variam em função da concentração destes elementos nos nanofios. Para os sistemas compostos por nanofios Fe-Pt adsorvidos em Pt(111), mostramos que é possível sintonizar as interações de troca entre os adátomos magnéticos Fe através da introdução de um diferente número de átomos Pt para ligá-los. Por exemplo, a interação de troca entre os adátomos de Fe pode ser consideravelmente aumentada pela introdução de cadeias de Pt que os conectem e tanto configurações ferromagnéticas, antiferromagnéticas ou não-colineares entre os adátomos de Fe podem ser estabilizadas, dependendo da espessura do espaçador Pt. Para os aglomerados Mn sobre a Ag(111) mostramos que a interação de troca entre os sítios de Mn depende não somente da distância entre os átomos, mas também do número de coordenação de cada sítio. Desta forma, verificamos um magnetismo não-colinear nestas nanoestruturas causado tanto por frustração geométrica, quanto pela competição de interações de curto e longo alcance. Nossos resultados estão em boa concordância com os resultados experimentais da literatura e com os resultados teóricos obtidos por outros métodos, quando existentes.

Metodologia computacional baseada em DFT, para compreensão de processos eletródicos em fases intermetálicas ordenadas

Pós-graduação em Ciência e Tecnologia de Materiais - FC

Very Intense Distinct Blue and Red Photoluminescence Emission in MgTiO 3 Thin Films Prepared by the Polymeric Precursor Method: An Experimental and Theoretical Approach

MgTiO3 (MTO) thin films were prepared by the polymeric precursor method with posterior spin-coating deposition. The films were deposited on Pt(111)/Ti/SiO2/Si(100) substrates and heat treated at 350 °C for 2 h and then heat treated at 400, 450, 500, 550, 600, 650 and 700 °C for 2 h. The degree of structural order−disorder, optical properties, and morphology of the MTO thin films were investigated by X-ray diffraction (XRD), micro-Raman spectroscopy (MR), ultraviolet− visible (UV−vis) absorption spectroscopy, photoluminescence (PL) measurements, and field-emission gun scanning electron microscopy (FEG-SEM) to investigate the morphology. XRD revealed that an increase in the annealing temperature resulted in a structural organization of MTO thin films. First-principles quantum mechanical calculations based on density functional theory (B3LYP level) were employed to study the electronic structure of ordered and disordered asymmetric models. The electronic properties were analyzed, and the relevance of the present theoretical and experimental results was discussed in the light of PL behavior. The presence of localized electronic levels and a charge gradient in the band gap due to a break in the symmetry are responsible for the PL in disordered MTO lattice.

Thickness-dependent piezoelectric behaviour and dielectric properties of lanthanum modified BiFeO3 thin films

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Ethanol and Water Adsorption on Close-Packed 3d, 4d, and 5d Transition-Metal Surfaces: A Density Functional Theory Investigation with van der Waals Correction

Nowadays, there is a great interest in the economic success of direct ethanol fuel cells; however, our atomistic understanding of the designing of stable and low-cost catalysts for the steam reforming of ethanol is still far from satisfactory, in particular due to the large number of undesirable intermediates. In this study, we will report a first-principles investigation of the adsorption properties of ethanol and water at low coverage on close-packed transition-metal (TM) surfaces, namely, Fe(110), Co(0001), Ni(111), Cu(111), Ru(0001), Rh(111), Pd(111), Ag(111), Os(0001), Ir(111), Pt(111), and Au(111), employing density functional theory (DFT) calculations. We employed the generalized gradient approximation with the formulation proposed by Perdew, Burke, and Erzenholf (PBE) to the exchange correlation functional and the empirical correction proposed by S. Grimme (DFT+D3) for the van der Waals correction. We found that both adsorbates binds preferentially near or on the on top sites of the TM surfaces through the 0 atoms. The PBE adsorption energies of ethanol and water decreases almost linearly with the increased occupation of the 4d and 5d d-band, while there is a deviation for the 3d systems. The van der Waals correction affects the linear behavior and increases the adsorption energy for both adsorbates, which is expected as the van der Waals energy due to the correlation effects is strongly underestimated by DFT-PBE for weak interacting systems. The geometric parameters for water/TM are not affected by the van der Waals correction, i.e., both DFT and DFT+D3 yield an almost parallel orientation for water on the TM surfaces; however, DFT+D3 changes drastically the ethanol orientation. For example, DFT yields an almost perpendicular orientation of the C-C bond to the TM surface, while the C-C bond is almost parallel to the surface using DFT +D3 for all systems, except for ethanol/Fe(110). Thus, the van der Waals correction decreases the distance of the C atoms to the TM surfaces, which might contribute to break the C-C bond. The work function decreases upon the adsorption of ethanol and water, and both follow the same trends, however, with different magnitude (larger for ethanol/TM) due to the weak binding of water to the surface. The electron density increases mainly in the region between the topmost layer and the adsorbates, which explains the reduction of the substrate work function.