965 resultados para Magnetron discharges


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The growth of highly lattice-mismatched InAs0.3Sb0.7 films on (100) GaAs Substrates by magnetron Sputtering has been investigated and even epitaxial lnAs(0.3)Sb(0.7) films have been successfully obtained. A strong effect of the growth conditions on the film structure was observed, revealing that there was a growth mechanism transition from three-dimensional nucleation growth to epitaxial layer-by-layer growth mode when increasing the substrate temperature. A qualitative explanation for that transition was proposed and the critical conditions for the epitaxial layer-by-layer growth mode were also discussed. (c) 2005 Elsevier B.V. All rights reserved.

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Zn1-xCdxO crystal thin films with different compositions were prepared on silicon and sapphire substrates by the dc reactive magnetron sputtering technique. X-ray diffraction measurements show that the Zn1-xCdxO films are of completely (002)-preferred orientation for x less than or equal to 0.6. For x = 0.8, the Elm is a mixture of ZnO hexagonal wurtzite crystals and CdO cubic crystals. For pure CdO, it is highly (200) preferential-oriented. Photoluminescence spectrum measurement shows that the Zn1-xCdxO (x = 0.2) thin film has a redshift of 0.14 eV from that of ZnO reported previously.

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Amorphous Sic films are deposited on Si (111) substrates by rf magnetron sputtering and then annealed at 1200 degreesC for different times by a dc self-heating method in a vacuum annealing system. The crystallization of the amorphous Sic is determined by Raman scattering at room temperature and X-ray diffraction. The experimental result indicates that the Sic nanocrystals have formed in the films. The topography of the as-annealed films is characterized by atomic force microscopy. Measurements of photoluminescence of the as-annealed films show blue or violet light emission from the nanocrystalline Sic films and photoluminescence peak shifts to short wavelength side as the annealing time decreases.

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Amorphous Sic films are deposited on Si (111) substrates by rf magnetron sputtering and then annealed at 1200 degreesC for different times by a dc self-heating method in a vacuum annealing system. The crystallization of the amorphous Sic is determined by Raman scattering at room temperature and X-ray diffraction. The experimental result indicates that the Sic nanocrystals have formed in the films. The topography of the as-annealed films is characterized by atomic force microscopy. Measurements of photoluminescence of the as-annealed films show blue or violet light emission from the nanocrystalline Sic films and photoluminescence peak shifts to short wavelength side as the annealing time decreases.

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Pd and Pd-Ag (24 wt.%) alloy composite membrane were prepared by electroless plating and magnetron sputtering, respectively. The membranes were characterized by scanning electron microscopy (SEM) and H-2 permeation measurement. Commercial microfiltration ceramic membrane were coated with gamma-Al2O3-based layer by the sol-gel method and used as substrate of Pd and Pd-Ag alloy film. Both the as-prepared membranes were shown: to be He gas-tight at room temperature with a thickness of <1 mu m. Permeation results showed that H-2 permeation through these composite membranes is mainly dominated by the surface chemistry of H-2 on or/and in the membranes. The membranes exhibited a high permeation rate of H-2 and a H-2/N-2 permselectivity of higher than 60 in the optimized operation conditions. (C) 2000 Elsevier Science B.V. All rights reserved.

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A Pd-Ag (24 wt%) alloy composite membrane was prepared by the magnetron sputtering. A gamma-Al2O3 membrane was synthesized by the sol-gel method and used as substrate of the Pd-Ag alloy film. The process parameters of the magnetron sputtering were optimized as a function of the compactness of the Pd-Ag alloy film. The best membrane with a thickness of 1 mu m was produced with a sputtering pressure of 2.7 Pa and a substrate temperature of 400 degrees C. The membrane had an H-2/N-2 permselectivity of 51.5-1000 and an H-2 permeation rate of 0.036-1.17 x 10(-5)cm(3)/cm(2).s. Pa, depending on operating conditions.

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Reproducible modulations in low-pressure, inductively coupled discharges operating in chlorine and argon-chlorine mixtures have been observed and studied. Changes in the light output, floating potential, negative ion fraction, and charged particle densities were observed. Here we report two types of unstable operational modes in an inductively coupled discharge. On the one hand, when the discharge was matched, to minimize reflected power, instabilities were observed in argon-chlorine plasmas over limited operating conditions of input power and gas pressure. The instability window decreased with increasing chlorine content and was observed for chlorine concentrations between 30% and 60% only. However, when operating at pressures below 5 mTorr and the discharge circuit detuned to increase the reflected power, modulations were observed in a pure chlorine discharge. These modulations varied in nature from a series of sharp bursts to a very periodic behavior and can be controlled, by variation of the matching conditions, to produce an apparent pulsed plasma environment. (C) 2005 American Institute of Physics.

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The reliable measurement of the electron energy distribution function (EEDF) of plasmas is one of the most important subjects of plasma diagnostics, because this piece of information is the key to understand basic discharge mechanisms. Specific problems arise in the case of RF-excited plasmas, since the properties of electrons are subject to changes on a nanosecond time scale and show pronounced spatial anisotropy. We report on a novel spectroscopic method for phase- and space-resolved measurements of the electron energy distribution function of energetic (> 12 eV) electrons in RF discharges. These electrons dominate excitation and ionization processes and are therefore of particular interest. The technique is based on time-dependent measurements during the RF cycle of excited-state populations of rare gases admixed in small fractions. These measurements yield � in combination with an analytical model � detailed information on the excitation processes. Phase-resolved optical emission spectroscopy allows us to overcome the difficulties connected with the very low densities (107�109 cm�3) and the transient character of the electrons in the sheath region. The EEDF of electrons accelerated in the sheath region can be described by a shifted Maxwellian with a drift velocity component in direction of the electric field. The method yields the high-energy tail of the EEDF on an absolute scale. The applicability of the method is demonstrated at a capacitively coupled RF discharge in hydrogen.

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Sterilization of bio-medical materials using radio frequency (RF) excited inductively coupled plasmas (ICPs) has been investigated. A double ICP has been developed and studied for homogenous treatment of three-dimensional objects. Sterilization is achieved through a combination of ultraviolet light, ion bombardment and radical treatment. For temperature sensitive materials, the process temperature is a crucial parameter. Pulsing of the plasma reduces the time average heat strain and also provides additional control of the various sterilization mechanisms. Certain aspects of pulsed plasmas are, however, not yet fully understood. Phase resolved optical emission spectroscopy and time resolved ion energy analysis illustrate that a pulsed ICP ignites capacitively before reaching a stable inductive mode. Time resolved investigations of the post-discharge, after switching off the RF power, show that the plasma boundary sheath in front of a substrate does not fully collapse for the case of hydrogen discharges. This is explained by electron heating through super-elastic collisions with vibrationally excited hydrogen molecules.