Magnetron sputtering growth of InAs0.3Sb0.7 films on (100) GaAs substrates: Strong effect of growth conditions on film structure
Data(s) |
2005
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Resumo |
The growth of highly lattice-mismatched InAs0.3Sb0.7 films on (100) GaAs Substrates by magnetron Sputtering has been investigated and even epitaxial lnAs(0.3)Sb(0.7) films have been successfully obtained. A strong effect of the growth conditions on the film structure was observed, revealing that there was a growth mechanism transition from three-dimensional nucleation growth to epitaxial layer-by-layer growth mode when increasing the substrate temperature. A qualitative explanation for that transition was proposed and the critical conditions for the epitaxial layer-by-layer growth mode were also discussed. (c) 2005 Elsevier B.V. All rights reserved. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Peng CT; Chen NF; Wu JL; Yin ZG; Yu Y .Magnetron sputtering growth of InAs0.3Sb0.7 films on (100) GaAs substrates: Strong effect of growth conditions on film structure ,JOURNAL OF CRYSTAL GROWTH,2005,285(4):459-465 |
Palavras-Chave | #半导体材料 #crystal structure #magnetron sputtering #semiconducting III-V materials #MOLECULAR-BEAM EPITAXY #CHEMICAL-VAPOR-DEPOSITION #INAS1-XSBX #ALLOYS #INASSB #INSB |
Tipo |
期刊论文 |