Monolithic Integration DFB Laser Array by Angling Active Stripe and Using Thin-Film Stripe Heater

国家863计划

增镀光学薄膜改善DFB激光器的光谱特性

利用增镀光学薄膜的方法，有效地将原来处于双模工作的1.3μm DFB激光器变为单模工作的激光器。选择的增镀膜层起到了抑制边模的作用。从而改变了激光器的模式特性。实验表明，增镀光学薄膜技术可望成为改善DFB激光器单模成品率的一种辅助方法。

Monolithic Integration of DFB Laser Diode and Electroabsorption Modulator by Selective Area Growth Technology

国家863计划

Monolithic Integration of MQW DFB Laser and EA Modulator in 1.55μm

国家863计划

质子注入平面掩埋条形高频DFB激光器

报道了采用质子注入制作平面掩埋条形高频DFB激光器。质子注入提高了限制层对电流的限制作用，并减小了限制层的寄生电容；DFB激光器的斜率效率由注入前的0.147mW/mA提高到0.216mW/mA；电容测试结果表明

应变补偿InGaAsP/InP量子阱DFB激光器与“扇形”光放大器的集成

该文在国内首先报道采用MOVPE技术研制成功了InGaAsP/InP应变补偿型量子阱DFB激光器与“扇形”光放大器的集成器件，实现了300mW单纵模工作，采用调制光放大器 、静态偏置DFB激光器的方法，产生了低啁啾、高功率的单纵模高频光脉冲。集成器件的研制成功，为其它含介质光栅反射器的光子集成器件的研制开辟了一条广阔的道路。

低阈值1.3μm InGaAsP/InP应变补偿多量子阱DFB激光器LP-MOCVD生长

报道了用低压－金属有机化学气相淀积(LP-MOCVD)方法制作1.3μm应变补偿多量子阱结构材料。X射线双晶衍射摇摆曲线可清晰地看到±4级卫星峰和卫星峰间的Pendellosong条纹。整个有源区的平均应变量几乎为零。用掩埋异质结(BH)条形工艺制备的含一级光栅的DFB激光器室温下阈值电流2～4mA,外量子效率0.33mW/mA,线性输出光功率达30mW,边模抑制比(SMSR)大于35dB。20～40℃下的特征温度T_0为67K。

1.3μm InGaAsP/InP应变多量子阱部分增益耦合DFB激光器

在国内首次报道了采用直接刻蚀有源区技术在应变多量子阱有源区结构基础上制作了1.3μm InGaAsP/InP部分增益耦合DFB激光器，器件采用全MOVPE生长，阈值电流10mA,边模抑制比(SMSR)大于35dB,在端面未镀膜情况下器件单纵模成品率较高。

1.27μm吸收型部分增益耦合MQW-DFB激光器

采用LP-MOCVD和LPE相结合,成功地研制出了吸收型部分增益耦合MQW-DFB激光器。扫描显微镜照片显示了清晰的被掩埋的吸收型增益耦合光栅,表明光栅掩埋生长前升温过程磷烷的保护是成功的。宽接触(broad area)脉冲电流大范围单纵模工作,条型器件室温连续直流工作阈电流为22mA至35mA,单模成品率高,边模抑制比(SMSR)超过37dB,没有观察到饱和吸收现象。

High-speed DFB laser and EMLs

High speed reliable 1.55 mum AlGaInAs multi-quantum well ridge waveguide (RW) DFB laser is developed with a 9GHz -3dB bandwidth. A high speed self aligned constricted mesa 1.55 mum DFB laser is achieved with a 9.1GHz -3dB bandwidth and a more than 20mW output power. A cost effective single RW electroabsorption modulated DFB laser (EMLs) is proposed and successfully fabricated by adopting selective area growth techniques:. a penalty free transmission at 2.5Gbps over 280Km normal G.652 single mode fiber is realized by using this EML as light source. For achieving a better performance EMLs. a gain-coupled DFB laser with etched quantum wells is successfully integrated with a electroabsorption modulator (EAM) for a high single mode yield. the wavelength of a EML is tuned in a 3.2nm range by a integrated thin-film heater for the wavelength routing. a buried heterostructure DFB laser is also successfully integrated with a RW EAM for a lower threshold current. lower EAM parasitic capacitance and higher output power.

1.5 mu m DFB integrated with vertical tapered spotsize converter fabricated by selective MOVPE

1.5 mu m DFB LD butt-joint integrated with vertical tapered spotsize converter was fabricated by LP-MOVPE. The vertical far field angle (FWHM) was decreased from 34degrees to 10degrees the threshold currents was as low as 19.8mA, the output power was 9.6mw at 100mA without HR coating and the SMSR was 35.8dB. The 1-dBm misalignment tolerance was 3.2 mu m, while the counterpart of the device without SSC was 2.2 mu m.

Investigation on integrated high speed DFB light source and narrow bandwidth RCE photodetector for WDM fiber communication network application

Electroabsorption (EA) modulator integrated with partially gain coupling distributed feedback (DFB) lasers have been fabricated and shown high single mode yield and wavelength stability. The small signal bandwidth is about 7.5 GHz. Strained Si1-chiGechi/Si multiple quantum well (MQW) resonant-cavity enhanced (RCE) photodetectors with SiO2/Si distributed Bragg reflector (DBR) as the mirrors have been fabricated and shown a clear narrow bandwidth response. The external quantum efficiency at 1.3 mum is measured to be about 3.5% under reverse bias of 16 V. A novel GaInNAs/GaAs MQW RCE p-i-n photodetector with high reflectance GaAs/ALAs DBR mirrors has also been demonstrated and shown the selectively detecting function with the FWHM of peak response of 12 nm.

Single ridge waveguide electroabsorption modulated DFB laser for 2.5Gb/s transmission

In this paper we proposed a single ridge waveguide electroabsorption modulated distributed feedback laser (EML) for long-haul high-speed optical fiber communication system. This EML was successfully fabricated by two step metal organic vapor phase epitaxy (MOVPE) including selective area growth (SAG) and helium partially implantation. No obvious changes of the threshold current (< 0.2 mA), extinction ratio (< 0.1 dB), output power (< 0.2 dBm) and isolation resistance were achieved in the preliminary aging test. With 2.5 Gb/s NRZ modulation, no power penalty was observed after the optical signal was transmitted through 280 Km normal single mode fiber.

Wavelength tunable electroabsorption modulated DFB baser with thin film heater