Distribution and bioaccumulation of microcystins in water columns: A systematic investigation into the environmental fate and the risks associated with microcystins in Meiliang Bay, Lake Taihu

For the purpose of understanding the environmental fate of microcystins (MCs) and the potential health risks caused by toxic cyanobacterial blooms in Lake Taihu, a systematic investigation was carried out from February 2005 to January 2006. The distribution of MCs in the water column, and toxin bioaccumulations in aquatic organisms were surveyed. The results suggested that Lake Taihu is heavily polluted during summer months by toxic cyanobacterial blooms (with a maximum biovolume of 6.7 x 10(8) cells/L) and MCs. The maximum concentration of cell-bound toxins was 1.81 mg/g (DW) and the dissolved MCs reached a maximum level of 6.69 mu g/L. Dissolved MCs were always found in the entire water column at all sampling sites throughout the year. Our results emphasized the need for tracking MCs not only in the entire water column but also at the interface between water and sediment. Seasonal changes of MC concentrations in four species of hydrophytes (Eichhornic crassipes, Potamogeton maackianus, Alternanthera philoxeroides and Myriophyllum spicatum) ranged from 129 to 1317, 147 to 1534, 169 to 3945 and 124 to 956 ng/g (DW), respectively. Toxin accumulations in four aquatic species (Carassius auratus auratu, Macrobrachium nipponensis, Bellamya aeruginosa and Cristaria plicata) were also analyzed. Maximum toxin concentrations in the edible organs and non-edible visceral organs ranged from 378 to 730 and 754 to 3629 ng/g (DW), respectively. Based on field studies in Lake Taihu, risk assessments were carried out, taking into account the WHO guidelines and the tolerable daily intake (TDI) for MCs. Our findings suggest that the third largest lake in China poses serious health threats when serving as a source of drinking water and for recreational use. In addition, it is likely to be unsafe to consume aquatic species harvested in Lake Taihu due to the high-concentrations of accumulated MCs. (C) 2007 Elsevier Ltd. All rights reserved.

Suppression of exciton recombination in symmetric GaAs0.7Sb0.3/GaAs/GaAs0.7P0.3 coupled quantum wells induced by an in-plane magnetic field

Suppression of the exciton recombination in GaAs0.7Sb0.3/GaAs/GaAs0.7P0.3 coupled quantum well (CQW) induced by an external magnetic field is investigated theoretically. Unlike the usual electro-Stark effect, the exciton energy dispersion of an exciton is modified by an external in-plane magnetic field, the ground state of the magnetoexciton shifts from a zero in-plane center of mass (CM) momentum to a finite CM momentum, and the Lorentz force induces the spatial separation of electron and hole. Consequently, this effect renders the ground state of magnetoexciton stable against radiative recombination due to momentum conservation. This effect depends sensitively on the thickness and height of GaAs0.7Sb0.3 layer, therefore it could provide us useful infometion about the band alignment of CQW. (C) 2004 American Institute of Physics.

Fabrication of ultra-low density and long-wavelength emission InAs quantum dots

By optimizing the molecular beam epitaxy growth conditions of self-organized InAs/GaAs quantum dots (QDs), we obtained an ultra-low density system of InAs QDs (4 x 10(6)cm(-2)). Photoluminescence (PL) spectroscopy reveals the emission wavelength at room temperature to be longer than 1300 nm with a GaAs capping layer. (c) 2007 Elsevier B.V. All rights reserved.

The keys to get high transconductance of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs devices

There are two key points to get high transconductance of pseudomorphic HEMTS (pHEMTs) devices. From the point view of materials, the transfer efficiency of the electrons from the delta -doped AlGaAs layer to the InGaAs channel must be high. From the point view of device processing, the gate recess depth must be carefully controlled. In the present work, AlGaAs/InGaAs/GaAs pHEMTs structures were grown by molecular beam epitaxy. Layer structures of the pHEMTs were optimized to get high transfer efficiency of the electrons. Gate recess depth was also optimized. A 0.2 mum pHEMT was fabricated on the materials with optimized layer structure using the optimized gate recess depth. The maximum transconductance of 650 mS/mm and the cut-off frequency of 81 GHz were achieved. (C) 2001 published by Elsevier Science Ltd.

利用代理签名构造基于身份的优化公平交换协议

为公平交换协议引入了一个自然的范例——基于身份的部分代理签名,给出其形式化的安全模型,同时提出了一个高效可证安全的部分代理签名方案.这是一个完全基于身份的优化公平交换协议.与以前协议不同的是,该方案没有使用任何零知识证明,有效地避免了大量计算.

HIRFL-CSR团簇靶的优化(英文)

为HIRFL-CSR团簇内靶设计加工了新的供气系统,拆换了原有的喷嘴,对氢气和氩气进行了新的实验,获得了氢气和氩气的稳定团簇束,解决了困扰团簇靶稳定运行的喷嘴堵塞问题.获得的氢团簇束密度为1.75x10~(13)atoms/cm~3,好于德国GSI内靶对氢束所达到的1x10~(13)atoms/cm~3.研究了团簇束的衰减,测量了氢束和氩束的有效靶厚,研究了团簇靶系统对这两种工作气体的长期运行稳定性.对氢和氩两种工作气体,各级气压呈现了良好的稳定性,说明在实验的时间范围内,团簇靶运行稳定.

高能Xe离子辐照引起的注碳a:SiO_2中新结构的形成

先用120 keV的碳离子注入非晶二氧化硅a:SiO2薄膜,再用能量为1 754 MeV的Xe离子辐照。注碳量为5.0×1016—8.6×1017ion/cm2,Xe离子辐照剂量为1.0×1011和5.0×1011ion/cm2。辐照后的样品中形成的新结构用显微傅立叶变换红外光谱仪进行测试分析。结果表明,Xe离子辐照引起了注碳a:SiO2中Si—C,C—C,Si—O—C键以及CO和CO2分子的形成与演化。在注碳量较高时,Xe离子辐照在样品中产生了大量的Si—C键。与注入未辐照和辐照的低注碳量样品比较,增强的Si—C键的形成,预示着辐照可引起注碳a:SiO2样品中的SiC结构相变。

Mid-Holocene climate variations recorded by palaeolake in marginal area of east Asian monsoon: A multi-proxy study

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