Suppression of exciton recombination in symmetric GaAs0.7Sb0.3/GaAs/GaAs0.7P0.3 coupled quantum wells induced by an in-plane magnetic field


Autoria(s): Chang K; Jiang DS; Xia JB
Data(s)

2004

Resumo

Suppression of the exciton recombination in GaAs0.7Sb0.3/GaAs/GaAs0.7P0.3 coupled quantum well (CQW) induced by an external magnetic field is investigated theoretically. Unlike the usual electro-Stark effect, the exciton energy dispersion of an exciton is modified by an external in-plane magnetic field, the ground state of the magnetoexciton shifts from a zero in-plane center of mass (CM) momentum to a finite CM momentum, and the Lorentz force induces the spatial separation of electron and hole. Consequently, this effect renders the ground state of magnetoexciton stable against radiative recombination due to momentum conservation. This effect depends sensitively on the thickness and height of GaAs0.7Sb0.3 layer, therefore it could provide us useful infometion about the band alignment of CQW. (C) 2004 American Institute of Physics.

Identificador

http://ir.semi.ac.cn/handle/172111/8234

http://www.irgrid.ac.cn/handle/1471x/63711

Idioma(s)

英语

Fonte

Chang, K; Jiang, DS; Xia, JB .Suppression of exciton recombination in symmetric GaAs0.7Sb0.3/GaAs/GaAs0.7P0.3 coupled quantum wells induced by an in-plane magnetic field ,JOURNAL OF APPLIED PHYSICS,JAN 15 2004,95 (2):752-754

Palavras-Chave #半导体物理 #PHOTOLUMINESCENCE
Tipo

期刊论文