国产I-4C型OBS在西南印度洋中脊的试验

以汕头市6区1县为研究区域,以2003年区域变更调整数据和2007年现状土地利用数

不同淀积厚度InAs量子点的喇曼散射

利用喇曼散射方法在77K温度下对不同淀积厚度的InAs/GaAs量子点材料进行了研究.在高于InAs体材料LO模的频率范围内观察到了量子点的喇曼特征峰,分析表明应变效应是影响QD声子频率的主要因素.实验显示,随着量子点层淀积厚度L的增加,InAs量子点的声子频率由于应变释放发生红移.在加入InAlAs应变缓冲层的样品中,类AlAs声子峰随L增大发生了蓝移,从侧面证实了InAs量子点层的应变释放过程.

Sensitivity of Total-Dose Radiation Hardness of SIMOX Buried Oxides to Doses of Nitrogen Implantation into Buried Oxides

In order to improve the total-dose radiation hardness of the buried oxides(BOX) in the structure of separa tion-by-implanted-oxygen(SIMOX) silicon-on-insulator(SOI), nitrogen ions are implanted into the buried oxides with two different doses,2 × 1015 and 3 × 1015 cm-2 , respectively. The experimental results show that the radiation hardness of the buried oxides is very sensitive to the doses of nitrogen implantation for a lower dose of irradiation with a Co-60 source. Despite the small difference between the doses of nitrogen implantation, the nitrogen-implanted 2 × 1015 cm-2 BOX has a much higher hardness than the control sample (i. e. the buried oxide without receiving nitrogen implantation) for a total-dose irradiation of 5 × 104rad(Si), whereas the nitrogen-implanted 3 × 1015 cm-2 BOX has a lower hardness than the control sample. However,this sensitivity of radiation hardness to the doses of nitrogen implantation reduces with the increasing total-dose of irradiation (from 5 × 104 to 5 × 105 rad (Si)). The radiation hardness of BOX is characterized by MOS high-frequency (HF) capacitance-voltage (C-V) technique after the top silicon layers are removed. In addition, the abnormal HF C-V curve of the metal-silicon-BOX-silicon(MSOS) structure is observed and explained.

Optimization of InGaAs Quantum Dots for Optoelectronic Applications

Self-assembled In_0.35Ga_0.65As/GaAs quantum dots with low indium content are grown under different growth temperature and investigated using contact atomic force microscopy(AFM). In order to obtain high density and high uniformityu of quantum dots, optimized conditions are concluded for MBE growth. Optimized growth condi-tions also compared with these of InAs/GaAs quantum dots. This will be very useful for InGaAs/GaAs QDs opto-electronic applications, such as quantum dots lasers and quantum dots infrared photodetectors.

Experimental Study on the Subthreshold Swing of Silicon Nanowire Transistors

SOI based wrap-gate silicon nanowire FETs are fabricated through electron beam lithography and wet etching. Dry thermal oxidation is used to further reduce the patterned fins cross section and transfer them into nanowires. Silicon nanowire FETs with different nanowire widths varying from 60 nm to 200 nm are fabricated and the number of the nanowires contained in a channel is also varied. The on-current (I-ON) and off-current (I-OFF) of the fabricated silicon nanowire FET are 0.59 mu A and 0.19 nA respectively. The subthreshold swing (SS) and the drain induced barrier lowering are 580 mV/dec and 149 mVN respectively due to the 30 nm thick gate oxide and 1015 cm(-3) lightly doped silicon nanowire channel. The nanowire width dependence of SS is shown and attributed to the fact that the side-gate parts of a wrap gate play a more effectual role as the nanowires in a channel get narrower. It seems the nanowire number in a channel has no effect on SS because the side-gate parts fill in the space between two adjacent nanowires.

~(142)Ce的新激发态及其经验壳模型研究

利用 42 0MeV　82 Se轰击1 39La引起的深部非弹反应和在束γ谱学方法研究了1 4 2 Ce的中高自旋激发态 .识别出了激发能为 2 62 5,2 995和 3 83 4keV的 3个新能级 ,自旋、宇称分别被指定为 8+,9(- ) 和 1 1 (- ) .发现这些能级非常好地符合N=84偶偶核转晕能级的系统性 .利用经验壳模型计算了1 4 2 Ce的中高自旋激发态的激发能 ,计算结果比较好地重现了实验值 .对它们的结构进行了讨论 ,表明在1 4 2 Ce的中高自旋激发态中以单粒子激发为主

土壤侵蚀的中子活化示踪法研究

利用中子活化示踪法研究坡面土壤的侵蚀过程 ,发现坡面的相对侵蚀量从坡脚到坡顶随坡长的变化符合 Weibull分布 ,其形状参数主要受降雨量、降雨历时和径流深度的影响 ,尺度参数主要与平均雨强、I3 0 相关。坡面在侵蚀的同时也发生沉积 ,一般来说短历时高强度的降雨沉积量较小 ,而长历时低强度的降雨沉积量较大 ,某一部位侵蚀产沙的沉积量与其距离之间有 y=axb的关系。坡面径流直接影响着坡面的输移比 ,当径流深和径流系数较高时 ,输移比接近于 1,否则输移比降低

应用Vc发酵弃渣防治保护地病害

The prevention and control of tomato plant diseases were conducted in protective ground using Vc fermentation waste residue treated by enzymolysis and ultrasonic wave. The results showed that the seedlings planted for 3 weeks on the protective ground soil continuously cropped tomato plant for 9 years and fertilized 75, 150 and 300 kg·hm -2 grew well. Their biomass were increased by 123%, 164% and 182%, and the disease incidence rates were decreased by 59%, 78% and 85%, respectively. Under application of 300 kg·hm -2 Vc fermentation waste residue, the products of tomato grown for 10 weeks on the soil continuously cropped tomato plant for 9, 6 and 2 years were increased by 60%, 43% and 14%, respectively, and the disease incidence rates were all decreased by 50%.

Multilayer structured carbon nanotubes/poly-L-lysine/laccase composite cathode for glucose/O-2 biofuel cell

Multilayer film of laccase, poly-L-lysine (PLL) and multi-walled carbon nanotubes (MWNTs) were prepared by a layer-by-layer self-assembly technique. The results of the UV-vis spectroscopy and scanning electron microscopy studies demonstrated a uniform growth of the multilayer. The catalytic behavior of the modified electrode was investigated. The (MWNTs/PLL/laccase)(n) multilayer modified electrode catalyzed four-electron reduction of O-2 to water, without any mediator.

Surface modification of bioactive glass nanoparticles and the mechanical and biological properties of poly(L-lactide) composites

Novel bioactive glass (13G) nanoparticles/poly(L-lactide) (PLLA) composites were prepared as promising bone-repairing materials. The BG nanoparticles (Si:P:Ca = 29:13:58 weight ratio) of about 40 run diameter were prepared via the sol-gel method. In order to improve the phase compatibility between the polymer and the inorganic phase, PLLA (M-n = 9700 Da) was linked to the surface of the BG particles by diisocyanate. The grafting ratio of PLLA was in the vicinity of 20 wt.%. The grafting modification could improve the tensile strength, tensile modulus and impact energy of the composites by increasing the phase compatibility.