Novel regrowth-free vertical active-passive integration scheme with improved fabrication tolerance

We present a novel vertically-coupled active-passive integration architecture that provides an order of magnitude reduction in coupling coefficient variation between misaligned waveguides when compared with a conventional vertically-coupled structure. © 2005 Optical Society of America.

Novel regrowth-free vertical active-passive integration scheme with improved fabrication tolerance

We present a novel vertically-coupled active-passive integration architecture that provides an order of magnitude reduction in coupling coefficient variation between misaligned waveguides when compared with a conventional vertically-coupled structure. © 2005 Optical Society of America.

Novel regrowth-free vertical active-passive integration scheme with improved fabrication tolerance

We present a novel vertically-coupled active-passive integration architecture that provides an order of magnitude reduction in coupling coefficient variation between misaligned waveguides when compared with a conventional vertically-coupled structure. © 2005 Optical Society of America.

Vertical alignment of process models – how can we get there?

There is a wide variety of drivers for business process modelling initiatives, reaching from business evolution and process optimisation over compliance checking and process certification to process enactment. That, in turn, results in models that differ in content due to serving different purposes. In particular, processes are modelled on different abstraction levels and assume different perspectives. Vertical alignment of process models aims at handling these deviations. While the advantages of such an alignment for inter-model analysis and change propagation are out of question, a number of challenges has still to be addressed. In this paper, we discuss three main challenges for vertical alignment in detail. Against this background, the potential application of techniques from the field of process integration is critically assessed. Based thereon, we identify specific research questions that guide the design of a framework for model alignment.

Regional Integration and the State : The Changing Nature of Sovereignty in Southern Africa and Europe

The study explores the role of the state in regional integration processes. The question is approached through theoretical discussion and two case-studies - SADC (Southern African Development Community) and the EU. The main research question of the study is, what are the possibilities and problems of the integration process in Southern Africa and how do they differ from the possibilities and problems of the integration process in Europe. The undelrying question of the study is why do states decide to participate in an integration process where they have to limit their sovereignty. Review of the theoretical discussion of the integration studies shows that the integration process is affected by several factors on different levels of the international system. But the state plays a central role in integration processes - integration processes are inititated and carried on by the participatig states. The European integration process shows that the interests of the state can change over time. At the beginning of the integration process, the objective was to strengthen participating states. Later EU member states have decided that it is in their interest to deepen the process even if it has meant limitation of their sovereignty. The determinant factor has been that the member states have considered it to be in their interst to deepen the process. In Southern Africa the integration process is only at the beginning. SADC aims to establish a free trade area by 2008. The biggest challenge is how to implement the integration process so that it benefits all member states in a region that is economically dominated by South Africa. In practice this can be achieved through establishment of corrective mechanisms, which ensure equitable distribution of benefits. This would require deeper integration and South Africa to adapt responsibility towards its regional partners. African integration processes in general have not been as successful as for example the EU. African states have been reluctant to limit their sovereignty in favour of regional organisations.This can be explained by the differences between European and African states. The EU member states have been democracies while African states have been characterised by concentration of power in the executive branch. Furthermore the political systems in Africa have been characterised by vertical clientelist reltionships. As a result it has not been in the interest of the political elite to limit the state sovereignty in favour of regional organisations. In recent years SADC has been relatively succesful in its integration process and reforms, but a lot remains to be done before the implementation of the free trade area can be succesful. The institutional structure and treaties of SADC differ from the structures of the EU. Member states are the main actors of the integration processes. Their differences are reflected in the process and produce different kinds of integration in different parts of the world.

A rational fraction polynomials model to study vertical dynamic wheel-rail interaction

This paper presents a model designed to study vertical interactions between wheel and rail when the wheel moves over a rail welding. The model focuses on the spatial domain, and is drawn up in a simple fashion from track receptances. The paper obtains the receptances from a full track model in the frequency domain already developed by the authors, which includes deformation of the rail section and propagation of bending, elongation and torsional waves along an infinite track. Transformation between domains was secured by applying a modified rational fraction polynomials method. This obtains a track model with very few degrees of freedom, and thus with minimum time consumption for integration, with a good match to the original model over a sufficiently broad range of frequencies. Wheel-rail interaction is modelled on a non-linear Hertzian spring, and consideration is given to parametric excitation caused by the wheel moving over a sleeper, since this is a moving wheel model and not a moving irregularity model. The model is used to study the dynamic loads and displacements emerging at the wheel-rail contact passing over a welding defect at different speeds.

Nanoelectromechanical DRAM for ultra-large-scale integration (ULSI)

A Nanoelectromechanical (NEM) device developed for dynamic random access memory (DRAM) is reported. A vertical nanotube structure is employed to form the electromechanical switch and capacitor structure. The mechanical movement of the nanotube defines 'On' and 'OFF' states and the electrical signals which result lead to charge storage in a vertical capacitor structure as in a traditional DRAM. The vertical structure contributes greatly to a decrease in cell dimension. The main concept of the NEM switch and capacitor can be applied to other memory devices as well. © 2005 IEEE.

Optical response of high-level bandgap in one-dimensional photonic crystal applying in-plane integration

A new broadband filter, based on the high level bandgap in 1-D photonic crystals (PCs) of the form Si vertical bar air vertical bar Si vertical bar air vertical bar Si vertical bar air vertical bar Si vertical bar air vertical bar Si vertical bar air vertical bar Si is designed by the plane wave expansion method (PWEM) and the transfer matrix method (TMM) and fabricated by lithography. The optical response of this filter to normal-incident and oblique-incident light proves that utilizing the high-level bandgaps of PCs is an efficient method to lower the difficulties of fabricating PCs, increase the etching depth of semiconductor materials, and reduce the coupling loss at the interface between optical fibers and the PC device. (c) 2007 Society of Photo-Optical Instrumentation Engineers.

Optical response of high-order band gap photonic crystal applying in-plane in one-dimensional integration

A new broadband filter, based on the high-order band gap in one-dimensional photonic crystal (PCs) of the form Si vertical bar air vertical bar Si vertical bar air vertical bar Si vertical bar air vertical bar Si vertical bar air vertical bar Si vertical bar air vertical bar Si, has been designed by the plane wave expansion method (PWEM) and transfer matrix method (TMM) and fabricated by lithography. The optical response of this filter to normal-incident and oblique-incident light proves that utilizing the high-order band gaps of PCs is an efficient method to lower the difficulties of fabricating PCs, increase the etching depth of semiconductor materials, and reduce the coupling loss at the interface between optical fibers and PC device. (c) 2007 Elsevier B.V. All rights reserved.

Single mode vertical-cavity surface emitting laser with surface plasmon nanostructure

The vertical-cavity surface-emitting laser(VCSEL) has proved to be a low cost light source with attractive properties such as surface emission, circular and low divergence output beam, and simple integration in two-dimensional array. Many new applications such as in spectroscopy, optical storage, short distance fiber optic interconnects, and in longer distance communication, are continuously arising. Many of these applications require stable and single-mode high output power. Several methods that affect the transverse guiding and/or introduce mode selective loss or gain have been developed. In this study, a method for improving the single mode output power by using metal surface plasmons nanostructure is proposed. Theoretical calculation shows that the outpout power is improved about 50% compared to the result of standard VCSELs.

Photonic switch and NOT logic gate based on the hybrid integration of a GaAsVCSEL and a GaAs MISS

The hybrid integrated photonic switch and not logic gate based on the integration of a GaAs VCSEL (Vertical Cavity Surface Emitting Lasers) and a MISS (Metal-Insulator-Semiconductor Switches) device are reported. The GaAs VCSEL is fabricated by selective etching and selective oxidation. The Ultra-Thin semi-Insulating layer (UTI) of the GaAs MISS is formed by using oxidation of A1As that is grown by MBE. The accurate control of UTI and the processing compatibility between VCSEL and MISS are solved by this procedure. Ifa VCSEL is connected in series with a MISS, the integrated device can be used as a photonic switch, or a light amplifier. A low switching power (10 mu W) and a good on-off ratio (17 dB contrast) have been achieved. If they are connected in parallel, they perform a photonic NOT gate operation.

Copper phthalocyanine based hybrid p-type permeable-base transistor in vertical architecture

We demonstrate the production of copper phthalocyanine (CuPc) based p-type hybrid permeable-base transistors, which operate at low voltages having high common-base current gains. These transistors are prepared by evaporating a thin metal layer (Ag or Al) that acts as base on top of a Si substrate that acts as collector. In the sequence CuPc and Au are thermally sublimated to produce the emitter, constituting a quite simple device production procedure with the additional advantage of allowing higher integration due to its vertical architecture.