Copper phthalocyanine based hybrid p-type permeable-base transistor in vertical architecture


Autoria(s): Feng CG; Yi MD; Yu SY; Ma DG; Feng CG; Zhang T; Meruvia MS; Hummelgen IA
Data(s)

2006

Resumo

We demonstrate the production of copper phthalocyanine (CuPc) based p-type hybrid permeable-base transistors, which operate at low voltages having high common-base current gains. These transistors are prepared by evaporating a thin metal layer (Ag or Al) that acts as base on top of a Si substrate that acts as collector. In the sequence CuPc and Au are thermally sublimated to produce the emitter, constituting a quite simple device production procedure with the additional advantage of allowing higher integration due to its vertical architecture.

Identificador

http://ir.ciac.jl.cn/handle/322003/15927

http://www.irgrid.ac.cn/handle/1471x/151644

Idioma(s)

英语

Fonte

Feng CG;Yi MD;Yu SY;Ma DG;Feng CG;Zhang T;Meruvia MS;Hummelgen IA.Copper phthalocyanine based hybrid p-type permeable-base transistor in vertical architecture,APPLIED PHYSICS LETTERS ,2006,88(20):文献编号:203501

Palavras-Chave #HIGH-GAIN
Tipo

期刊论文