GaAs基In(Ga)As量子环的材料生长和性质研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

(Ga,Mn)As 和闪锌矿结构CrSb 的分子束外延生长制备和磁性质研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

不同发光波长的GaAs 基In(Ga)As 量子点的材料生长和性质研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

半金属zb-CrAs 和稀磁半导体(Ga,Cr)As 薄膜分子束外延生长和磁性质研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

In(Ga)As 量子点材料生长及激光器稳态和瞬态特性研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

稀磁半导体(Ga, Mn)As磁光性质的研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

Si 共掺杂和高温退火对(Ga,Mn)As 结构和磁性质的影响

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

稀磁半导体(Ga,Mn)As和铁磁金属-半导体异质结Fe/GaAs铁磁相变过程的研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

In(Ga)N/GaN异质外延纳米结构的生长以及表征

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

Fe 和(Ga,Cr)As 薄膜的分子束外延生长及磁学性质

Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-04-28T14:23:05Z No. of bitstreams: 1 鲁军_博士论文.pdf: 4237580 bytes, checksum: 3a1a5f0ea10b0895d92e102e4cdcf5d0 (MD5)

稀磁半导体（Ga,Mn)As 的超快磁光谱研究

Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-06-07T02:59:47Z No. of bitstreams: 1 博士学位论文 － 朱永刚.pdf: 3575099 bytes, checksum: cb8ced7665a0624ff54bbfafa2be9c35 (MD5)

稀磁半导体(Ga,Mn)As 中自旋动力学的探索与研究

Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-07-02T05:55:53Z No. of bitstreams: 1 罗晶：稀磁半导体 (Ga,Mn)As中自旋动力学的探索与研究.pdf: 2131823 bytes, checksum: 74e83e69fc6f6b1c7247db0e1c2a8e51 (MD5)

STUDY ON MICROWAVE CYCLOTRON RESONANCE OF HIGH-MOBILITY GaAs/Al-0.35 Ga-0.65 As TWO-DIMENSIONAL ELECTRON GAS

The properties of electron states in the presence of microwave irradiation play a key role in understanding the oscillations of longitudinal resistance and the zero-resistance states in a high-mobility two-dimensional electron gas(2DEG) in low magnetic field. The properties of electron states in a high-mobility and low-density GaAs/Al0.35Ga0.65As 2DEG in the presence of Ka-band microwave irradiation were studied by reflectance-based optically detected cyclotron resonance(RODCR). The influences of the direction of microwave alternating electronic field, wavelength of the laser, and temperature on RODCR results were discussed. The results show that RODCR measurements provide a convenient and powerful method for studying electron states in 2DEG.

Structure and magnetic property of (Ga,Cr)As films with different Cr contents

We report variations in structure and magnetic property of (Ga,Cr) As films with increasing Cr content x. Due to phase segregation, a tendency towards inhomogeneous distribution with increasing x is confirmed. Barkhausen-like magnetization and large remanent magnetic moment were also clearly observed in the samples with x<5.3%. However, spin-glass-like behaviors were observed in both dc and ac magnetic measurements, which might originate from the competition between magnetic nucleation and frustration of long ferromagnetic order in this inhomogeneous system. All the samples exhibit characteristics of variable-range hopping conductivity at temperature below 150 K. Typical magnetic circular dichroism structure was observed in the sample with x=7.9%.