GaAs基In(Ga)As量子环的材料生长和性质研究


Autoria(s): 李凯
Contribuinte(s)

王占国

Data(s)

2005

Resumo

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

Made available in DSpace on 2009-04-13T11:45:31Z (GMT).

Made available in DSpace on 2009-07-09T01:36:19Z (GMT). No. of bitstreams: 1 disk/eh2005/lk.pdf: 2354183 bytes, checksum: feb81fe4be60a1fe04f62603187d160c (MD5) Previous issue date: 2005

Identificador

http://ir.semi.ac.cn/handle/172111/5515

http://www.irgrid.ac.cn/handle/1471x/60319

Idioma(s)

中文

Fonte

李凯.GaAs基In(Ga)As量子环的材料生长和性质研究.[硕士].北京.中国科学院半导体研究所.2005

Palavras-Chave #材料物理与化学
Tipo

学位论文