Numerical simulations of interrupted and conventional microchannel heat sinks

We provide three-dimensional numerical simulations of conjugate heat transfer in conventional and the newly proposed interrupted microchannel heat sinks. The new microchannel heat sink consists of a set of separated zones adjoining shortened parallel microchannels and transverse microchambers. Multi-channel effect, physical property variations, and axial thermal conduction are considered. It is found that flow rate variations in different channels can be neglected, while heat received by different channels accounts for 2% deviations from the averaged value when the heat flux at the back surface of the silicon chip reaches 100 W/cm(2). The computed hydraulic and thermal boundary layers are redeveloping in each separated zone due to shortened flow length for the interrupted microchannel heat sink. The periodic thermal developing flow is responsible for the significant heat transfer enhancement. Two effects influence pressure drops across the newly proposed microchannel heat sink. The first one is the pressure recovery effect in the microchamber, while the second one is the head loss when liquid leaves the microchamber and enters the next zone. The first effect compensates or suppresses the second one, leading to similar or decreased pressure drop than that for the conventional microchannel heat sink, with the fluid Prandtl number larger than unity.

Pool boiling heat transfer of ultra-light copper foam with open cells

High speed visualizations and thermal performance studies of pool boiling heat transfer on copper foam covers were performed at atmospheric pressure, with the heating surface area of 12.0 mm by 12.0 mm, using acetone as the working fluid. The foam covers have ppi (pores per inch) from 30 to 90, cover thickness from 2.0 to 5.0 mm, and porosity of 0.88 and 0.95. The surface superheats are from -20 to 190 K, and the heat fluxes reach 140 W/cm(2). The 30 and 60 ppi foam covers show the periodic single bubble generation and departure pattern at low surface superheats. With continuous increases in surface superheats, they show the periodic bubble coalescence and/or re-coalescence pattern. Cage bubbles were observed to be those with liquid filled inside and vented to the pool liquid. For the 90 ppi foam covers, the bubble coalescence takes place at low surface superheats. At moderate or large surface superheats, vapor fragments continuously escape to the pool liquid. Boiling curves of copper foams show three distinct regions. Region I and II are those of natural convection heat transfer, and nucleate boiling heat transfer for all the foam covers. Region III is that of either a resistance to vapor release for the 30 and 60 ppi foam covers, or a capillary-assist liquid flow towards foam cells for the 90 ppi foam covers. The value of ppi has an important effect on the thermal performance. Boiling curves are crossed between the high and low ppi foam covers. Low ppi foams have better thermal performance at low surface superheats, but high ppi foams have better one at moderate or large surface superheats and extend the operation range of surface superheats. The effects of other factors such as pool liquid temperature, foam cover thickness on the thermal performance are also discussed.

Optical response in a quantum dot superlattice nanoring under a lateral electric field

The optical absorption of a GaAs/AlGaAs quantum dot superlattice nanoring (QDSLNR) under a lateral dc electric field and with magnetic flux threading the ring is investigated. This structure and configuration provides a unique opportunity to study the optical response of a superlattice under an inhomogeneous electric field, which is not easily realized for general quantum well superlattices (QWSLs) but naturally realized for QDSLNRs under a homogeneous lateral electric field. It has been shown that a lateral dc electric field gives rise to a substantial change of the optical absorption spectra. Under a low field, the excitonic optical absorption is dominated by a 1s exciton. And with the electric field increasing, the optical absorption undergoes a transition from 1s excitonic absorption to 0 excitronic WSL absorption. (The number of 0, and -1 and +1 below are WSLs index.) The -1 and the +1 WSLs corresponding to the maximum effective field can also be identified. Due to the inhomogeneity of the electric field, the peaks of the -1 and the +1 WSLs are diminished and between them there exist rich and complicated structures. This is in contrast to the general QWSLs under a homogenous electric field. The complicated structures can be understood by considering the inhomogeneity of the electric field along the ring, which results in the nearest-neighbor transition, the next-nearest-neighbor transition, etc., have a different value repectively, at different sites along the ring. This may give rise to multiple WSLs. We have also shown that the line shape of the optical absorption is not sensitive to the threading magnetic flux. The threading magnetic flux only gives rise to a slight diamagnetic shift. Thus the enhancement of the sensitivity to the flux allowing for observation of the excitonic Aharanov-Bohm effect in the plain nanoring is not expected in QDSLNRs.

Photoluminescence enhancement of (NH4)(2)S-x passivated InP surface by rapid thermal annealing

Photoluminescence enhancement of (NH4)(2)S-x passivated InP surface followed by rapid thermal annealing (RTA) has been investigated by using photoluminescence (PL), Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS), An increase in PL intensity of up to 10 times was observed after sulfur passivation and RTA treatment compared to unpassivated InP surface. XPS measurement results show that introduction of RTA process can enhance the sulfur remaining on the passivated surface to bond to indium but no evidence of S-P bond is noticeable. Passivation enhancement mechanism is discussed.

ENHANCEMENT EFFECT OF PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITED SIN CAPPING LAYER ON DIELECTRIC CAP QUANTUM-WELL DISORDERING

Quantum well disordering of GaAs/AlGaAs multiple quantum well(MQW) has been accomplished with only plasma enhanced chemical vapor deposited (PECVD) SiN cap layer growth. The amount of blue shift increases with SiN growing time. This result has been explained by the vacancy indiffusion during PECVD SiN growth. Rapid thermal annealing (RTA) of the sample after SiN cap layer growth at 850 degrees C for 35 s caused a larger amount of blue shift than those obtained without RTA. By considering the model of Al diffusion from AlGaAs barrier into GaAs QWs together with the result from photoluminescence (PL) measurement, Al diffusion coefficients were calculated. The Al diffusion coefficient due to PECVD SiN was estimated at about 3 x10(-17) cm(2)/s. It was possible to extract the effect of RTA on the QW disordering, which showed that the amount of the blue shift and the Al diffusion coefficient due only to RTA increases with SiN cap layer thickness as reported by Chi et al.(10))

A voltage-controlled ring oscillator using InP full enhancement-mode HEMT logic

A voltage-controlled ring oscillator (VCO) based on a full enhancement-mode InAIAs/InGaAs/InP high electron mobility transistor (HEMT) logic is proposed. An enhancement-mode HEMT (E-HEMT) is fabricated, whose threshold is demonstrated to be 10 mV. The model of the E-HEMT is established and used in the SPICE simulation of the VCO. The result proves that the full E-HEMT logic technology can be applied to the VCO. And compared with the HEMT DCFL technology, the complexity of our fabrication process is reduced and the reliability is improved.

The enhancement of spontaneous emission factor in selectively oxidized vertical cavity lasers with double oxide layers

The behaviors of lateral propagating modes in the aperture and the oxidized regions are investigated numerically for selectively oxidized vertical-cavity surface-emitting lasers (VCSELs). The results show that the lateral propagating modes in the oxidized region are greatly affected by the oxide layer due to its low index, the modes are divergence for the VCSELs with sufficient thick double oxide layers. So the coupling between the modes in the aperture and oxidized regions is very weak, and we can expect that the lateral spontaneous emission is greatly affected in this case. Ignoring the contribution of the lateral spontaneous emission, we calculate spontaneous emission factor by counting the total number of the guided modes in selectively oxidized VCSELs with double oxide layers. The results agree very well with the reported measurements and are inversely proportional to the lateral index step.

The enhancement of diffusion by strain of InAs quantum dots in a GaAs matrix

We investigate the annealing behavior of Photoluminescence (PL) from self-assembled InAs quantum dots (QDs) with different thicknesses GaAs cap layers. The diffusion introduced by annealing treatment results in a blue-shift of the QD PL peak, and a decrease in the integrated intensity. The strain present in QDs enhances the diffusion, and the QDs with the cap layers of different thicknesses will experience a strain of different strength. This can lend to a, better understanding of the larger blue-shift of the PL peak of the deeper buried QDs, and the different variance of the full width at half maximum of the luminescence from QDs with the cap layers of different thicknesses.