Point defects in III-V compound semiconductors

Point defects in III-V compound semiconductors were analyzed systematically in this paper. The effects of substitutes, antisites, interstitials, and vacancies on lattice parameters in III-V compound semiconductors were calculated with a simple model. The formation energies of vacancies in compound semiconductors can be obtained by this calculation. A practical technique established on this model has been utilized for measuring the stoichiometry in GaAs. The relationship between stoichiometry and deep level centers in GaAs was also investigated.

Defects and morphologies in In0.8Ga0.2As/InAlAs/InP(001) for high electron-mobility transistors

Defects and morphologies are presented in this paper as revealed with transmission electron microscope (TEM) in the In(0.8)G(0.2)As/InAlAs heterostructure on InP(001) for high-electron-mobility transistors application. Most of the misfit dislocation lines are 60 degrees type and they deviate < 110 > at some angles to either side according to their Burges vectors. The misfit dislocation lines deviating [-110] are divided into two types according to whether their edge component b(eg) of Burges vectors in [001] pointing up or down. If b(eg) points up in the growth direction, there is the local periodical strain modulation along the dislocation line. In addition, the periodical modulation in height along [-110] on the In(0.8)G(0.2)As surface is observed, this surface morphology is not associated with the relaxation of mismatch strain.

Self-assembled InAs quantum wires on InP(001)

Self-assembled InAs quantum wires (QWRs) embedded in In0.52Al0.48As, In0.53Ga0.47As, and (In0.52Al0.48As)(n)/(In0.53Ga0.47As)(m)-short-period-lattice matrices on InP(001) were fabricated with molecular beam epitaxy (MBE). These QWR lines are along [110], x 4 direction in the 2 x 4 reconstructed (001) surface as revealed with reflection high-energy electron diffraction (RHEED). Alignment of quantum wires in different layers in the InAs/spacer multilayer structures depends on the composition of spacer layers. (C) 2000 Elsevier Science B.V. All rights reserved.

Structural identification of a cubic phase in hexagonal GaN films grown on sapphire by gas-source molecular beam epitaxy

The structural characteristics of gallium nitride (GaN) films grown on sapphire(0001) substrates by gas source molecular beam epitaxy (GSMBE) have been investigated using high-resolution synchrotron irradiation X-ray diffraction and cathodoluminescence with a variable energy electron beam. Besides the well-known GaN hexagonal structure, a small portion of cubic phase GaN was observed. The X-ray measurements provide an essential means for the structural identification of the GaN layers. Arising from the variable penetration depth of the electron beam in the cathodoluminescence measurements, it was found that the fraction of the GaN cubic-phase typically increased as the probing depth was increased. The results suggest that the GaN cubic phase is mostly located near the interface between the substrate and GaN layer due to the initial nucleation.

Electronic, structural, and optical properties of crystalline yttria

The electronic structure of crystalline Y2O3 is investigated by first-principles calculations within the local-density approximation (LDA) of the density-functional theory. Results are presented for the band structure, the total density of states (DOS), the atom-and orbital-resolved partial DOS. effective charges, bond order, and charge-density distributions. Partial covalent character in the Y-O bonding is shown, and the nonequivalency of the two Y sites is demonstrated. The calculated electronic structure is compared with a variety of available experimental data. The total energy of the crystal is calculated as a function of crystal volume. A bulk modulus B of 183 Gpa and a pressure coefficient B' of 4.01 are obtained, which are in good agreement with compression data. An LDA band gap of 4.54 eV at Gamma is obtained which increases with pressure at a rate of dE(g)/dP = 0.012 eV/Gpa at the equilibrium volume. Also investigated are the optical properties of Y2O3 up to a photon energy of 20 eV. The calculated complex dielectric function and electron-energy-loss function are in good agreement with experimental data. A static dielectric constant of epsilon(O)= 3.20 is obtained. It is also found that the bottom of the conduction band consists of a single band, and direct optical transition at Gamma between the top of the valence band and the bottom of the conduction band may be symmetry forbidden.

Design and Fabrication of a Photonic Crystal Channel Drop Filter Based on an Asymmetric Silicon-on-Insulator Slab

We report on the design and fabrication of a photonic crystal (PC) channel drop filter based on an asymmetric silicon-on-insulator (SOI) slab. The filter is composed of two symmetric stick-shape micro-cavities between two single-line-defect (W1) waveguides in a triangular lattice, and the phase matching condition for the filter to improve the drop efficiency is satisfied by modifying the positions and radii of the air holes around the micro-cavities. A sample is then fabricated by using electron beam lithography (EBL) and inductively coupled plasma (ICP) etching processes. The measured 0 factor of the filter is about 1140, and the drop efficiency is estimated to be 73% +/- 5% by fitting the transmission spectrum.

Temperature and power-density-dependent inter-shell energy states in InAs/GaAs quantum dots

We have investigated the evolution of exciton state filling in InAs/GaAs quantum dot (QD) structures as a function of the excitation power density by using rnicro-photoluminescence spectroscopy at different temperatures. In addition to the emission bands of exciton recombination corresponding to the atom-like S, P and D, etc. shells of QDs, it was observed that some extra states V between the S and P shells, and D' between the P and D shells appear in the spectra with increasing number of excitons occupying the QDs at a certain temperature. The emergence of these inter-shell excitonic levels is power density and temperature dependent, which is an experimental demonstration of strong exciton-exciton exchange interaction, state hybridization, and coupling of a multi-exciton system in QDs. (c) 2006 Elsevier B.V. All rights reserved.

Kondo effect in a triangular triple quantum dots ring with three terminals

For a triangular triple quantum dots (TTQDs) ring with three terminals, when lowering one of the dot-lead coupling to realize the left-right (L-R) reflection symmetry coupling, the internal C-upsilon of the TTQDs is well preserved in the absence of many-body effect for the symmetric distribution of the dot-lead coupling on the molecular orbits. In the presence of Kondo effect, the decrement of one of the dot-lead couplings suppresses the inter-dot hopping. This happens especially for the coupled quantum dot (QD), which decouples with the other two ones gradually to form a localized state near the Fermi level As a result, the internal dynamic symmetry of the TTQDs ring is reduced to L-R reflection symmetry, and simultaneously, the linear conductance is lifted for the new forming molecular orbit near the Fermi level

弱互模拟等价类算法改进

大量的硬件和软件系统广泛应用在一些重要的领域，在许多情况下错误和失效是不可接受的。需要提供方法来检验软硬件的正确性，增强我们对软硬件系统的信心。形式化验证提供了提高软硬件可靠性的方法。 互模拟等价类和弱互模拟等价类可以用来降低形式化验证中模型的规模。弱互模拟等价类有两种算法：一种是先计算迁移关系的自反传递闭包，然后调用互模拟等价类的算法。另一种是作为IGPTPartEF的一个特例，直接在原图上用划分精化的方法计算。针对这些计算弱互模拟等价类的算法，我们提出两种改进算法。 首先，我们观察到有些状态在划分精化的过程中不会被再次切分，可以事先将它们归类到一个组，在划分精化过程中以这些组为基本单位进行切分，可以在很大程度上减小算法花费的时间。我们用该思想给设计出了改进算法一。 然后，我们观察在Paige-Tarjan算法中引入了“处理比较小的一半”的思想来改进计算互模拟等价类的算法，它使得计算互模拟等价类的算法的时间复杂度从O(mn)（其中m是边数，n是顶点数）改进到O(mlgn)，而在前面所述的弱互模拟等价类算法中并没有引入“处理比较小的一半”。我们引入这一思想，设计出了改进算法二。 之后，我们设计实现了原型工具，并进行了数据实验来证实算法在时间上与原算法相比有明显改进。

identity based threshold proxy signature

IEEE Computer Society

乙酰丙酸钾对黄土高原山地红枣生长发育及产量品质的影响

选用9 a生盛果期矮化密植梨枣树为试验材料,研究乙酰丙酸钾叶面喷施对黄土高原山地红枣生长发育及产量品质的影响。结果表明:叶面喷施稀释800倍的乙酰丙酸钾,对枣树的生长发育、产量和品质都有明显的促进作用,建议在黄土高原区红枣实际生产中采用稀释800倍的乙酰丙酸钾喷施。