Calculation of energy levels in InGaAs/GaAs quantum dot array

The subbands of the ground state E-c1, the first excited state E-c2 and heavy hole state E-HH1 are calculated by solving the eigenvalues of effective-mass Hamiltonian H-0 which is derived from eight-band k . p theory and the calculations are performed at k(x) = k, = k = 0 for the three-dimensional array of InGaAs/GaAs quantum dots (QDs). With indium content in InGaAs QDs gradually increasing from 30% to 100%,the intersubband transition wavelength of E-c2 to E-c1, blue-shifts from 18.50 to 11.87 mu m,while the transition wavelength of E-c1, to E-HH1, red-shifts from 1. 04 to 1. 73 mu m. With the sizes of Ir-0.5 Ga-0.5 As and InAs QDs increasing from 1.0 to 5.0 nm, the intersubband transition from E-c1, to E-C2 transforms from bound-state-to-continuum-state to bound-state-to-bound-state, and the corresponding intersubband transition wavelengths red-shift from 8.12 pm (5.90 pm) to 53.47 mu m (31.87 pm), respectively, and the transition wavelengths of E-C1 to E-HH1 red-shift from 1. 13 mu m (1.60 mu m) to 1.27 mu m (2.01 mu m), respectively.

Self-consistent analysis of double-delta-doped InAlAs/InGaAs/InP HEMTs

We have carried out a theoretical study of double-delta-doped InAlAs/InGaAs/InP high electron mobility transistor (HEMT) by means of the finite differential method. The electronic states in the quantum well of the HEMT are calculated self-consistently. Instead of boundary conditions, initial conditions are used to solve the Poisson equation. The concentration of two-dimensional electron gas (2DEG) and its distribution in the HEMT have been obtained. By changing the doping density of upper and lower impurity layers we find that the 2DEG concentration confined in the channel is greatly affected by these two doping layers. But the electrons depleted by the Schottky contact are hardly affected by the lower impurity layer. It is only related to the doping density of upper impurity layer. This means that we can deal with the doping concentrations of the two impurity layers and optimize them separately. Considering the sheet concentration and the mobility of the electrons in the channel, the optimized doping densities are found to be 5 x 10(12) and 3 x 10(12) cm(-2) for the upper and lower impurity layers, respectively, in the double-delta-doped InAlAs/InGaAs/InP HEMTs.

Photoinduced spin alignment of the magnetic ions in (Ga,Mn)As

Time-resolved Kerr rotation measurement in the (Ga,Mn)As diluted magnetic semiconductor allows direct observation of the dynamical properties of the spin system of the magnetic ions and the spin-polarized holes. Experimental results show that the magnetic ions can be aligned by the polarized holes, and the time scales of spin alignment and relaxation take place in tens and hundreds of picoseconds, respectively. The Larmor frequency and effective g factor obtained in the Voigt geometry show an unusual temperature dependence in the vicinity of the Curie temperature due to the exchange coupling between the photoexcited holes and magnetic ions. Such a spin coherent precession can be amplified or destructed by two sequential excitation pulses with circularly copolarized or oppositely polarized helicity, respectively. (c) 2006 American Institute of Physics.

Radiative transition in delta-doped GaAs superlattices

Radiative transition in delta-doped GaAs superlattices with a weak coupling was investigted at low temperature, The experimental results show that the transitions from both electron ground state and excited state to hole state have been observed, Based on the effective mass approximation theory, the structures of energy band and photoluminescence spectra for the samples used were calculated. Comparing the experiment with theory, a good agreement was abtained.

Two-color quantum well infrared photodetector simultaneously working at 10-14 mu m

We have demonstrated a two-color quantum well infrared photodetector (QWIP) exhibiting simultaneous photoresponse with cutoff wavelengths at 11.8 and 14.5 mu m, respectively. Strong photocurrent signals are observed at temperature of 77 K. The simultaneous two-color photoresponse is achieved by utilizing a simple design by broadening the width of the quantum well and selecting an appropriate doping density. The two peaks are attributed to the intersubband transitions from the ground state to the first excited state (bound state) and to the fifth excited state (continuum state), respectively.

场发射(FED)用荧光粉的研制与改性

场发射平板显示器（Field Emission Displays, FED）是一种新发展起来的平板显示器，由于其在亮度、视角、响应时间、工作温度范围、能耗等方面具有优良的特性，成为近年新型显示器研究的热点之一。为实现高效的FED红、绿、蓝全色显示，荧光粉在其中起着十分重要的作用。制备性能优良的场发射用彩色荧光粉是决定将来FED技术成功与否的关键因素之一。 本论文研究的内容包括场发射(FED)用荧光粉的研制和改性工作。在场发射(FED)用荧光粉研制方面，采用溶胶-凝胶方法，制备了一系列新型场发射(FED)用荧光粉，包括稀土离子激活的镓酸镧 [(LaGaO3: Re3+ (Re = Eu, Tb, Dy, Tm, Sm)]体系、铟酸钙[(CaIn2O4: Re3+ (Re = Eu, Pr, Tb, Dy,)]体系、铟酸锶[(SrIn2O4: Re3+ (Re = Pr, Tb, Dy)]体系、镓酸镥[Lu3Ga5O12:Re3+ (Re = Eu, Tb，Pr)]体系，并研究了Pr, Sm, Eu, Tb, Dy, Tm等稀土离子在这些基质中的光致发光、低压阴极射线发光性质和能量传递等性质。在荧光粉的改性方面，采用喷雾热解法制备了Sr2CeO4球形场发射用荧光粉，研究了喷雾前驱体溶液中，聚乙二醇浓度、金属离子浓度、烧结温度对形貌及发光性能的影响；采用溶胶－凝胶方法成功将SiO2表明包覆一层CaTiO3:Pr3+, Y3Al5O12:Ce3+/Tb3+荧光粉，得到单分散，球形形貌，分布均匀，具有核/壳结构的球形荧光粉；另外研究了不同的制备方法对Ga2O3:Dy3+荧光粉的发光性能的影响。所得样品用XRD、FTIR、SEM、TEM、漫反射光谱、光致发光(PL)光谱、荧光寿命曲线、低压阴极射线(CL)光谱等进行表征。 在紫外光激发下，稀土离子激活的镓酸镧彩色荧光粉有基质(LaGaO3)的发射和稀土离子(Eu3+, Tb3+, Dy3+, Tm3+, Sm3+)的特征发射，研究表明在基质和稀土离子之间存在能量传递，其能量传递效率因离子而异。在阴极射线激发下，样品仅有稀土离子(Eu3+, Tb3+, Dy3+, Tm3+, Sm3+)的特征发射。如：LaGaO3: Eu3+发红光，LaGaO3: Dy3+发白光，LaGaO3: Tm3+发蓝光，LaGaO3: Sm3+发黄光，LaGaO3: Sm3+,Tb3+发白光。LaGaO3: Tb3+的发光颜色可通过不同Tb3+的掺杂浓度从蓝光到绿光进行调控。在相同的激发条件下，所制备的蓝光发射的LaGaO3: Tb3+和LaGaO3: Tm3+荧光粉与商业FED用蓝粉(Y2SiO5: Ce3+，日亚化学工业株式会社，NP-1047)相比具有更好的色纯度和更高的发光效率；所制备的黄光发射的LaGaO3: Sm3+荧光粉与商业低压黄色荧光粉((Zn,Cd)S: Ag，日亚化学工业株式会社，NP-1020)相比，色纯度接近，但具有更高的发光效率。并首次实现了单一基质中白光发射(LaGaO3: Sm3+,Tb3+), 所制备的稀土离子激活的镓酸镧彩色荧光粉[(LaGaO3: Re3+ (Re = Eu, Tb, Dy, Tm, Sm )]在场发射器件有潜在的应用。 在稀土离子掺杂的Sr/CaIn2O4荧光粉体系中，在基质Sr/CaIn2O4和掺杂离子Pr3+/Tb3+/Dy3+存在高效能量传递。基质Sr/CaIn2O4吸收能量向激活离子Pr3+/ Tb3+/Dy3+传递，发射为稀土离子Pr3+/Tb3+/Dy3+的特征发射，发光强度、荧光寿命等符合应用要求，在低压电子束激发下，Sr/CaIn2O4: Pr3+/Tb3+/Dy3+荧光粉为稀土离子的特征发射，其低压阴极射线发光(CL)光谱与光致发光(PL)发射光谱一致，CL强度随激发电压，电流密度增加而增强。 对于CaIn2O4:Eu3+荧光粉，进一步研究表明CaIn2O4:Eu3+荧光粉的光致发光和阴极射线发光颜色可以通过掺杂不同浓度的Eu3+从白光，黄光，到红光进行调控。低浓度掺杂发白光，高浓度掺杂发红光，适当的浓度发黄光。 在Lu3Ga5O12:Re3+ (Re = Eu, Tb，Pr)荧光粉体系中，在紫外（UV）和低压阴极射线激发下，所制备的荧光粉Lu3Ga5O12: Eu3+, Lu3Ga5O12: Pr3+为稀土离子Eu3+, Pr3+的特征发射，分别发黄光和绿光。Lu3Ga5O12:Tb3+的发光颜色因Tb3+掺杂浓度不同而不同，低浓度掺杂发蓝光，高浓度发绿光。 Sr2CeO4荧光粉在UV及低压阴极射线激发下发出强烈蓝光，源于配体到金属离子电荷迁移带跃迁(Ce4+-O2-)。其阴极射线发光强度与电压及灯丝电流呈良好的线性关系。 采用溶胶－凝胶方法的核壳结构的SiO2@CaTiO3:Pr3+和SiO2@Y3Al5O12: Ce3+/Tb3+荧光粉, FESEM和TEM结果表明这种核壳结构的发光材料表面致密，厚度均匀，保持了单分散SiO2微球的形貌特征。在UV及低压阴极射线激发下，SiO2@CaTiO3:Pr3+呈强红色发射，源于Pr3+ 的1D2—3H4 (612 nm)跃迁；SiO2@Y3Al5O12:Ce3+和SiO2@Y3Al5O12:Tb3+ 分别发黄绿光和绿光，源于Ce3+的5d-4f和Tb3+的5D4-7FJ (J = 6, 5, 4, 3)跃迁。PL强度可以通过包覆次数调控，CL强度随激发电压及灯丝电流增加而增强。 在Ga2O3:Dy3+荧光粉体系中，采用了溶胶-凝胶，氨水共沉淀，和高温固相法制备了Ga2O3:Dy3+荧光粉并比较了他们的结晶行为，形貌，光致发光和低压阴极射线发光性能。溶胶-凝胶法制备由于原料在分子层次上混合，可以得到纯相，氨水共沉淀和高温固相法原料不如溶胶凝胶法混合均匀，很难得到纯相。溶胶-凝胶和氨水共沉淀所得荧光粉为纳米级别大小，分别呈球形和玉米棒形状；高温固相法微米级别且呈不规则形状。Ga2O3向Dy3+传递能量效率依次按溶胶-凝胶，氨水共沉淀，和高温固相法逐渐降低。在紫外光激发下，分别发白光，蓝白光，蓝光。其低压阴极射线发光与光致发光类似。相比之下，溶胶-凝胶法制备Ga2O3:Dy3+荧光粉比氨水共沉淀和高温固相法制备要好。

Cyclotron-resonance mass of two-dimensional electrons in GaN/AlxGa1-xN heterostructures

The electron cyclotron-resonance (CR) mass of quasi-two-dimensional electrons in GaN/AlxGa1-xN heterostructures is studied theoretically. The correction to the CR mass due to electron-phonon interaction is investigated, taking into account band nonparabolicity, the occupation effect, and the screening of the electron-phonon coupling. The dependence of the CR mass on the electron density and on the magnetic field strength is displayed in detail, and the calculated CR mass agrees well with a recent experiment. We found that the effective electron-phonon coupling strength in GaN heterostructures is reduced below the bulk value.

改进的SILAR法制备ZnO薄膜及其表征

A modified solution method, successive ionic layer adsorption and reaction(SILAR), was applied to prepare transparent zinc oxide(ZnO) film on glass substrate at (125±5) ℃ in mixed ion precursor solution. The surface morphology and crystallizations of films were analyzed by field emission scanning microscopy(FESEM) and X-ray diffraction(XRD), respectively. The optical properties of the films were studied by ultraviolet visible(UV-Vis)spectroscopy. The results show that the obtained samples are polycrystallin...中文文摘：采用一种改进的液相成膜技术——连续离子层吸附与反应(SILAR)法,用锌氨络离子[Zn(NH3)4]2+溶液作为独立的前驱体溶液,以载玻片为衬底,在(125±5)℃的温度下沉积出致密、透明的ZnO薄膜。分别用冷场发射型扫描电镜(FESEM)和X射线衍射(XRD)分析了薄膜样品的表面形貌和结晶状态,用紫外-可见分光光度计(UV-Vis spectroscopy)研究了薄膜样品的发光性能。结果表明:获得样品为六角纤锌矿结构的多晶薄膜材料沿[002]方向择优生长;样品表面均匀、致密,厚度约为550nm;在可见光波段具有高的透射率(>80%)。

HIRFL-CSR频谱现象：中心频率突变分析研究

In commissioning the HIRFL-CSR (Cooler Storage Ring of Heavy Ion Research Facility in Lanzhou),with the spectrum analyzer monitoring the beams on-line, we measured many parameters of the beam status for improving quality of the heavy ion beams. In this paper, the sudden change of the beam center frequency is analyzed.A theoretical analysis is done mainly on instabilities of the electron voltage and the neutralization factor. Simulations were made for the problem. According to the simulation result, we can conclude that it is the instability of neutralization factor that caused the problem. 中文摘要：HIRFL-CSR调试过程中，利用频谱分析仪实时监测束流，根据其上测的数据进行相关参数调整，改善束流的品质。本文对分析仪上观测到的现象一束流的中心频率发生突变进行了研究，主要就电子束的高压不稳定性和中性化因子的突变做了理论分析，并进行了相关的模拟计算 ，根据模拟结果初步断定该现象的出现由电子束的中性化因子导致。

Behavior of crystalline silicon under huge electronic excitations: A transient thermal spike description

Recent experimental works devoted to the phenomena of mixing observed at metallic multilayers Ni/Si irradiated by swift heavy ions irradiations make it necessary to revisit the insensibility of crystalline Si under huge electronic excitations. Knowing that Ni is an insensitive material, such observed mixing would exist only if Si is a sensitive material. In order to extend the study of swift heavy ion effects to semiconductor materials, the experimental results obtained in bulk silicon have been analyzed within the framework of the inelastic thermal spike model. Provided the quenching of a boiling ( or vapor) phase is taken as the criterion of amorphization, the calculations with an electron-phonon coupling constant g(300 K) = 1.8 x 10(12) W/cm(3)/K and an electronic diffusivity D-e(300 K) = 80 cm(2)/s nicely reproduce the size of observed amorphous tracks as well as the electronic energy loss threshold value for their creation, assuming that they result from the quenching of the appearance of a boiling phase along the ion path. Using these parameters for Si in the case of a Ni/Si multilayer, the mixing observed experimentally can be well simulated by the inelastic thermal spike model extended to multilayers, assuming that this occurs in the molten phase created at the Ni interface by energy transfer from Si. (C) 2009 Elsevier B. V. All rights reserved.

Solitary magnon excitations in a one-dimensional antiferromagnet with Dzyaloshinsky-Moriya interactions

We investigate solitary excitations in a model of a one-dimensional antiferromagnet including a single-ion anisotropy and a Dzyaloshinsky-Moriya antisymmetric exchange interaction term. We employ the Holstein-Primakoff transformation, the coherent state ansatz and the time variational principle. We obtain two partial differential equations of motion by using the method of multiple scales and applying perturbation theory. By so doing, we show that the motion of the coherent amplitude must satisfy the nonlinear Schrodinger equation. We give the single-soliton solution.

Neutron-Proton Asymmetry Dependence of Spectroscopic Factors in Ar Isotopes

Spectroscopic factors have been extracted for proton-rich Ar-34 and neutron-rich Ar-46 using the (p, d) neutron transfer reaction. The experimental results show little reduction of the ground state neutron spectroscopic factor of the proton-rich nucleus Ar-34 compared to that of Ar-46. The results suggest that correlations, which generally reduce such spectroscopic factors, do not depend strongly on the neutronproton asymmetry of the nucleus in this isotopic region as was reported in knockout reactions. The present results are consistent with results from systematic studies of transfer reactions but inconsistent with the trends observed in knockout reaction measurements.

The optical properties and the natural lifetime calculation of a Sm(III) complex

The photophysical properties of the complex Sm(PM)(3)(TP)(2) [PM = 1-phenyl-3-methyl-4-isobutyryl-5-pyrazolone, TP = triphenyl phosphine oxide] are determined in crystal state, and energy transfer process is modeled for ligands to center Sm(III) ion. The characteristic luminescence of Sm(III) is sensitized by PM and TP, and most of transitions from excited state (4)G(5/2) of Sm3+ are detected.

Preparation of Hollow Carbon and Silicon Carbide Fibers with Different Cross-Sections by using Electrospun Fibers as Templates

Hollow carbon nanofibers with circular and rectangular opening were prepared by using electrospun silica fibers as templates. Silica fibers were synthesized by electrospinning, and they were coated with a carbon layer formed by thermal decomposition and carbonization of polystyrene under a nitrogen atmosphere. Hollow carbon nanofibers with circular and rectangular openings were then obtained after the silica core was etched by hydrofluoric acid. The carbon nanofibers with different morphologies also could be used as templates to fabricate silicon carbide fibers. The silicon carbide fibers with circular and rectangular openings could be obtained by using hollow carbon nanofibers and carbon belts as templates, respectively.