THEORETICAL TREATMENT OF A3B5 CHLORIDE VAPOR-PHASE EPITAXY - GROWTH, DOPING, OPTIMIZATION

A theoretical description of chloride vapour-phase epitaxy (CVPE) has been proposed which contains two-dimensional (2D) gas-dynamic equations for transport of reactive components and kinetic equations for surface growth processes connected by nonlinear adiabatic boundary conditions. No one of these stages is supposed to be the limiting one. Calculated variations of growth rate and impurity concentrations along the growing layer fit experimental data well.

2-DELTA-FUNCTION GENERALIZED PLASMA POLE MODEL FOR 1ST PRINCIPLE CALCULATIONS OF QUASI-PARTICLE ENERGIES IN MANY-ELECTRON SYSTEMS

To evaluate the dynamical effects of the screened interaction in the calculations of quasiparticle energies in many-electron systems a two-delta-function generalized plasma pole model (GPP) is introduced to simulate the dynamical dielectric function. The usual single delta-function GPP model has the drawback of over simplifications and for the crystals without the center of symmetry is inappropriate to describe the finite frequency behavior for dielectric function matrices. The discrete frequency summation method requires too much computation to achieve converged results since ab initio calculations of dielectric function matrices are to be carried out for many different frequencies. The two-delta GPP model is an optimization of the two approaches. We analyze the two-delta GPP model and propose a method to determine from the first principle calculations the amplitudes and effective frequencies of these delta-functions. Analytical solutions are found for the second order equations for the parameter matrices entering the model. This enables realistic applications of the method to the first principle quasiparticle calculations and makes the calculations truly adjustable parameter free.

A novel noise optimization technique for inductively degenerated CMOS LNA

This paper proposes a novel noise optimization technique. The technique gives analytical formulae for the noise performance of inductively degenerated CMOS low noise amplifier (LNA) circuits with an ideal gate inductor for a fixed bias voltage and nonideal gate inductor for a fixed power dissipation, respectively, by mathematical analysis and reasonable approximation methods. LNA circuits with required noise figure can be designed effectively and rapidly just by using hand calculations of the proposed formulae. We design a 1.8 GHz LNA in a TSMC 0.25 pan CMOS process. The measured results show a noise figure of 1.6 dB with a forward gain of 14.4 dB at a power consumption of 5 mW, demonstrating that the designed LNA circuits can achieve low noise figure levels at low power dissipation.

Optimization of Global Signal Networks for Island-Style FPGAs

We present a staggered buffer connection method that provides flexibility for buffer insertion while designing global signal networks using the tile-based FPGA design methodology. An exhaustive algorithm is used to analyze the trade-off between area and speed of the global signal networks for this staggered buffer insertion scheme, and the criterion for determining the design parameters is presented. The comparative analytic result shows that the methods in this paper are proven to be more efficient for FPGAs with a large array size.

Layout Design and Optimization of RF Spiral Inductors on Silicon Substrate

The effects of key geometrical parameters on the performance of integrated spiral inductors are investigated with the 3D electromagnetic simulator HFSS. While varying geometrical parameters such as the number of turns （N）,the width of the metal traces （W）,the spacing between the traces （S）,and the inner diameter （ID）, changes in the performance of the inductors are analyzed in detail. The reasons for these changes in performance are presented. Simulation results indicate that the performance of an integrated spiral inductor can be improved by optimizing its layout. Some design rules are summarized.

Optimization of InGaAs Quantum Dots for Optoelectronic Applications

Self-assembled In_0.35Ga_0.65As/GaAs quantum dots with low indium content are grown under different growth temperature and investigated using contact atomic force microscopy(AFM). In order to obtain high density and high uniformityu of quantum dots, optimized conditions are concluded for MBE growth. Optimized growth condi-tions also compared with these of InAs/GaAs quantum dots. This will be very useful for InGaAs/GaAs QDs opto-electronic applications, such as quantum dots lasers and quantum dots infrared photodetectors.

Optimization of InGaAs quantum dots for optoelectronic applications

Quantum dot infrared photodetectors (QDIP) are in the center of research interest nowadays. However the real QDIP is inferior to those predicted in theory, in which the dot density is much higher than those reported. Through optimizing the growth conditions, we realized the control of high-density quantum dot growth. This will be very useful for future QDIP development.

Using photoluminescence as optimization criterion to achieve high-quality InGaAs/AlGaAs pHEMT structure

The single delta -doped InGaAs/AlGaAs pseudomorphic HEMT structure materials were grown by molecular beam epitaxy. The photoluminescence spectra of the materials were studied. There are two peaks in the photoluminescence spectra of the materials, corresponding to two sub energy levels of InGaAs quantum well. The ratio of the two peak's intensity was used as criterion to optimize the layer structures of the materials. The material with optimized layer ;tructures exhibits the 77 It mobility and two-dimensional electron gas density of 16 500 cm(2)/Vs and 2.58 x 10(12) cm(-2) respectively, and the 300 K mobility and two-dimensional electron gas density of 6800 cm(2)/Vs and 2.55 x 10(12) cm(-2) respectively. The pseudomorphic HEMT devices with gate length of 0.2 mum were fabricated using this material. The maximum transconductance of 650 mS/mm and the cut-off frequency of 81 GHz were achieved. (C) 2001 Elsevier Science B.V. All rights reserved.

Design and optimization of highly nonlinear low-dispersion crystal fiber with high birefringence for four-wave mixing

We have proposed a novel type of photonic crystal fiber (PCF) with low dispersion and high nonlinearity for four-wave mixing. This type of fiber is composed of a solid silica core and a cladding with a squeezed hexagonal lattice elliptical airhole along the fiber length. Its dispersion and nonlinearity coefficient are investigated simultaneously by using the full vectorial finite element method. Numerical results show that the proposed highly nonlinear low-dispersion fiber has a total dispersion as low as +/- 2.5 ps nm(-1) km(-1) over an ultrabroad wavelength range from 1.43 to 1.8 mu m, and the corresponding nonlinearity coefficient and birefringence are about 150 W-1 km(-1) and 2.5 x 10(-3) at 1.55 mu m, respectively. The proposed PCF with low ultraflattened dispersion, high nonlinearity, and high birefringence can have important application in four-wave mixing. (C) 2010 Optical Society of America

Optimization of evanescent wave imaging for the visualization of protein adsorption layers

We have optimized the settings of evanescent wave imaging for the visualization of a protein adsorption layer. The enhancement of the evanescent wave at the interface brought by the incident angle, the polarized state of light beam as well as a gold layer is considered. In order to improve the image contrast of a protein monolayer in experiments, we have optimized three factors-the incident angle, the polarization of light beam, and the thickness of an introduced thin gold layer with a theoretical simulation.

Optimization of magnetic field for CR dipole magnet

High homogeneity of the CR (collector ring) dipole magnet for FAIR (Facility for Antiproton and Ion Research) project at GSI is essential. The two optimized and analysis methods are introduced in detail. In order to obtain an ideal integral magnetic field distribution, the complicated end chamfer has been designed. By chamfering the removable pole, the distribution tolerance of high magnetic field is optimized to +/- 2 x 10(-4). The method of adding a mirror plane is suitable for the high magnetic field and it doesn't fit the low one. The OPERA is used to optimize the dipole magnetic field.