Blue-yellow ZnO homostructural light-emitting diode realized by metalorganic chemical vapor deposition technique

We report on the realization of ZnO homojunction light-emitting diodes (LEDs) fabricated by metalorganic chemical vapor deposition on (0001) ZnO bulk substrate. The p-type ZnO epilayer was formed by nitrogen incorporation using N2O gas as oxidizing and doping sources. Distinct electroluminescence (EL) emissions in the blue and yellow regions were observed at room temperature by the naked eye under forward bias. The EL peak energy coincided with the photoluminescence peak energy of the ZnO epilayer, suggesting that the EL emissions emerge from the ZnO epilayer. In addition, the current-voltage and light output-voltage characteristics of ZnO homojunction LEDs have also been studied. (c) 2006 American Institute of Physics.

Demonstration of GaN/InGaN light emitting diodes on (100) beta-Ga2O3 substrates by metalorganic chemical vapour deposition

The growth and fabrication of GaN/InGaN multiple quantum well (MQW) light emitting diodes ( LEDs) on ( 100) beta-Ga2O3 single crystal substrates by metal-organic chemical vapour deposition (MOCVD) technique are reported. x-ray diffraction (XRD) theta-2 theta. scan spectroscopy is carried out on the GaN buffer layer grown on a ( 100) beta-Ga2O3 substrate. The spectrum presents several sharp peaks corresponding to the ( 100) beta-Ga2O3 and ( 004) GaN. High-quality ( 0002) GaN material is obtained. The emission characteristics of the GaN/InGaN MQW LED are measurement. The first green LED on beta-Ga2O3 with vertical current injection is demonstrated.

Structural and optical properties of a-plane ZnO thin films synthesized on γ-LiAlO2 (302) substrates by low pressure metal-organic chemical vapor deposition

Nonpolar a-plane (1120) ZnO thin films have been fabricated on gamma-LiAlO2 (302) substrates via the low-pressure metal-organic chemical vapor deposition. An obvious intensity variation of the E-2 mode in the Raman spectra indicates that there exhibits in-plane optical anisotropy in the a-plane ZnO thin films. Highly-oriented uniform grains of rectangular shape can be seen from the atomic force microscopy images, which mean that the lateral growth rate of the thin films is also anisotropic. It is demonstrated experimentally that a buffer layer deposited at a low temperature (200 degrees C) can improve the structural and optical properties of the epilayer to a large extent. (c) 2007 Elsevier B.V. All rights reserved.

氧碘激光器相位延迟片的制备与性能研究

多层介质反射镜在非正入射的时候，两个不同的偏振态之间会产生不同的相移。利用矩阵法，根据菲涅耳公式和电磁场边界条件，推导出p，s波的相移。通过优化设计．入射角为54°，在1285～1345nm之间p，s波获得了270°±1°的相移，同时也使反射率在99．5％以上。用离子束溅射技术制备相位延迟膜，用分光光度计测试了光谱特性和用椭偏仪测试了相位特性，在相应波段获得了262．4°±1．8°的相移，同时也使反射率在99．6％以上。误差的主要来源是离子源工作特性会产生不均匀的过渡层和最外层会吸收一些水气、灰尘等也产生

From Gods to men: A historical overview of the discovery of the chemical elements

To achieve the apparently simple Periodic Table of the Elements has implied tremendous efforts over thousands of years. In this paper we present a brief history of the discovery of the chemical elements from prehistory to the present day, revealing the controversies that arose on the way and claiming the important work performed by alchemists in the advancement of knowledge. This is especially important if we consider that alchemy had a period of existence of many thousands of years, while the "Chemistry", officially established as a science in the eighteenth century, has operated as such for only a few hundred years. Even so, if we consider the progress of discovery and isolation of chemical elements throughout history, it can be observed that the number of elements identified is achieved mainly in the nineteenth and twentieth centuries, reflecting the development of instrumental techniques, that facilitated this task.