Improved performance in organic light emitting diodes with a mixed electron donor-acceptor film involved in hole injection

Organic light emitting diodes using a mixed layer of electron acceptor 3, 4, 9, 10 perylenetetracarboxylic dianhydride and electron donor copper phthalocyanine (PTCDA:CuPc) on indium tin oxide (ITO) anodes were fabricated. The device properties were found to be strongly dependent on the thickness of the PTCDA:CuPc film: both the power efficiency and the driving voltage of the device were optimized with a thickness of PTCDA:CuPc ranging from 10 to 20 nm. As compared to the conventional ITO/CuPc hole injection structure, the ITO/PTCDA:CuPc hole injection structure could remarkably enhance both the luminance and the power efficiencies of devices. A mechanism of static-induced, very efficient hole-electron pairs generation in mixed PTCDA:CuPc films was proposed to explain the experimental phenomena. The structural and optical properties of PTCDA:CuPc film were examined as well. (c) 2007 American Institute of Physics.

Synthesis and structures of morphology-controlled ZnO nano- and microcrystals

Zinc oxide flower-like bunches were directly synthesized on indium-doped tin oxide (ITO) glass substrates through a simple chemical bath deposition process. By adjusting precursor concentration, other morphologies ( spindles and rods) were also obtained. All of them are hexagonal and single crystalline in nature and grow along the [ 0001] crystallographic direction. The possible growth mechanisms for these nano- and microcrystals were proposed. It was revealed that both the inherent highly anisotropic structure of ZnO and the precursor concentration play crucial roles in determining final morphologies of the products. In addition, vibrational properties of ZnO crystals with different morphologies were investigated by Raman spectroscopy.

Effects of residual C and O impurities on photoluminescence in undoped GaN epilayers

Photoluminescence (PL) was investigated in undoped GaN from 4.8 K to room temperature. The 4.8 K spectra exhibited recombinations of free exciton, donor-acceptor pair (DAP), blue and yellow bands (Ybs). The blue band (BB) was also identified to be a DAP recombination. The YB was assigned to a recombination from deep levels. The energy-dispersive X-ray spectroscopy show that C and O are the main residual impurities in undoped GaN and that C concentration is lower in the epilayers with the stronger BB. The electronic structures of native defects, C and O impurities, and their complexes were calculated using ab initio local-density-functional (LDF) methods with linear muffin-tin-orbital and 72-atomic supercell. The theoretical analyses suggest that the electron transitions from O-N states to C-N and to V-Ga states are responsible for DAP and the BB, respectively, and the electron transitions between the inner levels of the C-N-O-N complex may be responsible for the YB in our samples. (C) 2002 Elsevier Science B.V. All rights reserved.

Determination of the interdiffusion coefficients of liquid Zn and Sn using Ta/Zn-Sn/Si trilayers

In this paper we present a new method for measuring diffusion coefficients in liquid metals under convection-less conditions with solid/liquid-liquid/solid trilayer. The advantage of this kind of trilayer is that effects from gravity-induced convection and Marangoni-convection can be omitted, so that the diffusion coefficient is determined more accurately. The Ta/Zn-Sn/Si trilayer were prepared with a multi-target ion-beam sputtering deposition technique and annealed in an electric furnace under an argon atmosphere. The interdiffusion of liquid zinc and tin at 500 degrees degree C was investigated. The diffusion concentration profiles were determined by energy dispersive spectroscopy. The interdiffusion coefficients range from 1.0x10(-6)cm(2)/s to 2.8x10(-6)cm(2)/s, which is less than previous values measured by capillary reservoir technique under 1g-environment where various convection exist. The precise interdiffusion coefficients of liquid zinc and tin result from the removing of disturbances of various kinds of convection.

Effect of rapid thermal annealing on Ti-AlN interfaces

The interface diffusion, reaction, and adherence of rapid thermal annealed Ti/ALN were investigated by RES, AES, SIMS, XRD and a scratch test. The experimental results show that diffusion and reaction occurs at the interface of Ti/AlN when the sample is rapidly annealed. During annealing, both the O adsorbed on the surface and doped in the AlN substrate diffuse into the Ti film. At low temperature TiO2 is produced. At higher temperature O reacts with the diffused Al in the Ti film and produces an Al2O3 layer in the middle of the film. N diffuses into the Ti film and produces TiN with an interface reaction. Ti oxide is produced at the interface between the film and the substrate. Scratch test results show that interface adherence is distinctly improved by rapid annealing at low temperature and decreases at higher temperature. (C) 1999 Elsevier Science B.V. All rights reserved.

The dependence of growth rate of GaN buffer layer on growth parameters by metalorganic vapor-phase epitaxy

The growth rate of GaN buffer layers on sapphire grown by metalorganic vapor-phase epitaxy (MOVPE) in an atmospheric pressure, two-channel reactor was studied. The growth rate, as measured using laser reflectance, was found to be dependent on growth temperature, molar flow rate of the sources tin this case, trimethylgallium and ammonia) and the input configuration of sources into the reactor. A model of the GaN buffer layer growth process by MOVPE is proposed to interpret the experimental evidence. (C) 1998 Elsevier Science B.V. All rights reserved.

Novel photonic crystal structure GaN-based light-emitting diodes - art. no. 68410J

For enhancing the output efficiency of GaN light-emitting diode(LED), we calculated the band structure of photonic crystal(PhC), and designed and fabricated several novel GaN LEDs with photonic crystal on Indium-Tin-Oxide(ITO), which as p-type transparent contact of GaN LED. In this fabricating process, we developed conventional techniques in order that these methods can be easily applied to industrial volume-production. And we have done some preliminary experiments and obtained some results.

Electropolymerized poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) film on ITO glass and its application in photovoltaic device

Poly(3,4-ethylenedioxythiopliene):poly(styrene sulfonate) (PEDOT:PSS) films have been electrochemically polymerized in situ on ITO glass substrate in boron trifluoride diethyl etherate electrolyte (BFEE). Cyclic voltammograms show good redox activity and stability of the PEDOT films. These films had been directly used to fabricate organic-inorganic hybrid solar cells with the structure of ITO/PEDOT/ZnO:MDMC-PPV/Al. The solar cells made of electrochemically polymerized films exhibit higher energy conversion efficiencies compared with that prepared by the spin-coating method, and the highest value is 0.33%. This in-situ electropolymerized method effectively simplifies fabricating procedures and may blaze a facile and economical route for producing high-efficiency solar cells.

菜花烙铁头蛇毒金属蛋白酶的研究

本论文结合生物化学与分子生物学手段对云南产菜花烙铁头蛇毒（几互刃eresrs户厂由刀打）的金属蛋白酶进行了系统深入的研究。从中分离纯化到两个新的蛇毒金属蛋白酶：二型蛇毒金属蛋白酶Jerdonit认和三型蛇毒金属蛋白酶jerdohagin。采用又卫PCR的方法得到了两个cDNA。通过蛋白质胰蛋白酶水解的内肚测序分析，其中一条为编码Jerdo址tin的，cDNA。序列分析发现，另外一条是一个含有RTS短链去整合素cDNA序列，命名为jerdos七atin，并对其进行了表达和活性鉴定。，Jerdonitin是一个表观分子量为为kDa的单链蛋白。它的c砚认全长1578bP，由金属蛋白酶、间隔区和去整合素区组成，说明它是二型蛇毒金属蛋白酶。但是与其它二型蛇毒金属蛋白酶不同的是，Jerdonitin的成熟蛋白由金属蛋白酶和去整合素结构域组成。与其它二型相比，Jerdonitin"多了两个半肤氨酸的（CysZ19andCys238）分别位于间隔区和去整合素区，Cys219可能和后面去整合素区的自由半眺氨酸残基Cys238形成一对二硫键，这对二硫键可能阻止了在后翻译加工过程中去整合素区的释放。通过Jerdonitin和其它二型蛇毒金属蛋白酶氨基酸序列比较和进化分析，结合天然蛋白结构数据，说明Jerdonitin是二型蛇毒金属蛋白酶的一个新亚型。和其它蛇毒金属蛋白酶一样，Jerdon九in是a一纤溶酶，并且它的活性都能被金属鳌合剂EDTA完全抑制，而不受丝氨酸蛋白酶抑制剂PMSF影响。像其独特的结构一样，Jerdonitin不仅具有纤维蛋白原降解的蛇毒金属蛋白酶活性，而且也有抑制ADP诱导的血小板聚集的非酶活性。Jerdohagin是一个表观分子量为96kDa单链蛋白。测定其内肤发现它有金属蛋白酶、去整合素样和富含半耽氨酸区组成，说明jerdohagig是三型蛇毒金属蛋白酶。像其它典型的蛇毒金属蛋白酶一样，jerdohagin的出血活性能完全被EDTA抑制，而不受R涯SF的影响。Jerdohagin是仪纤溶酶专一酶切人纤维蛋白原的。链。用氧化的胰岛素B链作底物，它可以水解仰r16一Leu17肤键。有趣的是，jerdohagin不激活人凝血酶原，但是它酶切人凝血酶原和凝血酶原激活后产生的激活片段F1。Jerdostotin的cDNA全长邹3bp，由信号肚、前肤和去整合素三个区组成，其与。btustotin和vieris七atin有较高的相似性（80％）。jerdostatin的序列是第一个报道的短链去整合素的cD以序列，它的产生机制和aCostatin一a有相似之处。值得注意的是，jerdostatin和obtus七atin八ipris，tatin不同的氨基酸残基（8／9）主要分布在含有整合素识别区的C末端。采用硫氧还蛋·白作为融合蛋白表达jerdostatin：，表达纯化后发现有两个j．erdostatin表达，，命名为：jerdo就。tin一1和'rjerdostotin一2。质谱分析显示它们的八个半肤氨酸都参与形成了四对二硫键，它俩可能是分别含有天然和非天然二硫键结构的多肚。但是jerdostatin一1的活性比rjerdostat还一2高两个数量级。和含有KTS的去整合素一样，重组jerdos七atin的异构体都选择性抑制整合素。lpl结合胶原IV，rjerdost就in一1的抑制活性分别是。b加stotin和viperistotill的1／1时和1／2500。氨基酸残基的组成不同尽管没有影响jerdost就in对整合素alpl的抑制选择性，但是它造成的化学环境不同可能导致抑制活性的差异。

INTERVALLEY-GAMMA-CHI DEFORMATION POTENTIALS IN III-V ZINCBLENDE AND SI SEMICONDUCTORS BY AB-INITIO PSEUDOPOTENTIAL CALCULATIONS

Intervalley GAMMA - X deformation potential constants (IVDP's) have been calculated by first principle pseudopotential method for the III-V zincblende semiconductors AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs and InSb. As a prototype crystal we have also carried out calculations on Si. When comparing the calculated IVDP's of LA phonon for GaP, InP and InAs and LO phonon for AlAs, AlSb, GaAs, GaSb and InSb with a previous calculation by EPM in rigid approximation, good agreements are found. However, our ab initio pseudopotential results of LA phonon for AlAs, AlSb, GaAs, GaSb and InSb and LO phonon for GaP, InP and InAs are about one order of magnitude smaller than those obtained by EPM calculations, which indicate that the electron redistributions upon the phonon deformations may be important in affecting GAMMA - X intervalley shatterings for these phonon modes when the anions are being displaced. In our calculations the phonon modes of LA and LO at X point have been evaluated in frozen phonon approximation. We have obtained, at the same time, the LAX and LOX phonon frequencies for these materials from total energy calculations. The calculated phonon frequencies agree very well with experimental values for these semiconductors.

1ST PRINCIPLES PSEUDOPOTENTIAL CALCULATIONS OF ZONE BOUNDARY PHONON FREQUENCIES OF III-V-ZINCBLENDE SEMICONDUCTORS

Longitudinal zone boundary X phonon frequencies have been calculated by a first principles pseudopotential method for III-V zincblende semiconductors AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs and InSb. The phonon frequencies have been evaluated from total energy calculations in the frozen phonon approximation. The calculated phonon frequencies agree very well with the experimental values.

Effects of residual C and O impurities on photoluminescence in undoped GaN epilayers

Photoluminescence (PL) was investigated in undoped GaN from 4.8 K to room temperature. The 4.8 K spectra exhibited recombinations of free exciton, donor-acceptor pair (DAP), blue and yellow bands (Ybs). The blue band (BB) was also identified to be a DAP recombination. The YB was assigned to a recombination from deep levels. The energy-dispersive X-ray spectroscopy show that C and O are the main residual impurities in undoped GaN and that C concentration is lower in the epilayers with the stronger BB. The electronic structures of native defects, C and O impurities, and their complexes were calculated using ab initio local-density-functional (LDF) methods with linear muffin-tin-orbital and 72-atomic supercell. The theoretical analyses suggest that the electron transitions from O-N states to C-N and to V-Ga states are responsible for DAP and the BB, respectively, and the electron transitions between the inner levels of the C-N-O-N complex may be responsible for the YB in our samples. (C) 2002 Elsevier Science B.V. All rights reserved.

Determination of the interdiffusion coefficients of liquid Zn and Sn using Ta/Zn-Sn/Si trilayers

In this paper we present a new method for measuring diffusion coefficients in liquid metals under convection-less conditions with solid/liquid-liquid/solid trilayer. The advantage of this kind of trilayer is that effects from gravity-induced convection and Marangoni-convection can be omitted, so that the diffusion coefficient is determined more accurately. The Ta/Zn-Sn/Si trilayer were prepared with a multi-target ion-beam sputtering deposition technique and annealed in an electric furnace under an argon atmosphere. The interdiffusion of liquid zinc and tin at 500 degrees degree C was investigated. The diffusion concentration profiles were determined by energy dispersive spectroscopy. The interdiffusion coefficients range from 1.0x10(-6)cm(2)/s to 2.8x10(-6)cm(2)/s, which is less than previous values measured by capillary reservoir technique under 1g-environment where various convection exist. The precise interdiffusion coefficients of liquid zinc and tin result from the removing of disturbances of various kinds of convection.