Novel photonic crystal structure GaN-based light-emitting diodes - art. no. 68410J
| Data(s) |
2008
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| Resumo |
For enhancing the output efficiency of GaN light-emitting diode(LED), we calculated the band structure of photonic crystal(PhC), and designed and fabricated several novel GaN LEDs with photonic crystal on Indium-Tin-Oxide(ITO), which as p-type transparent contact of GaN LED. In this fabricating process, we developed conventional techniques in order that these methods can be easily applied to industrial volume-production. And we have done some preliminary experiments and obtained some results. For enhancing the output efficiency of GaN light-emitting diode(LED), we calculated the band structure of photonic crystal(PhC), and designed and fabricated several novel GaN LEDs with photonic crystal on Indium-Tin-Oxide(ITO), which as p-type transparent contact of GaN LED. In this fabricating process, we developed conventional techniques in order that these methods can be easily applied to industrial volume-production. And we have done some preliminary experiments and obtained some results. zhangdi于2010-03-09批量导入 zhangdi于2010-03-09批量导入 SPIE.; Chinese Opt Soc. [Hu, HaiYang; Lu, Lin; Du, Wei; Liu, HongWei; Kan, Qiang; Wang, ChunXia; Xu, XingSheng; Chen, HongDa] Chinese Acad Sci, Inst Semicond, Beijing 100864, Peoples R China SPIE.; Chinese Opt Soc. |
| Identificador | |
| Idioma(s) |
英语 |
| Publicador |
SPIE-INT SOC OPTICAL ENGINEERING 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA |
| Fonte |
Hu, HY ; Lu, L ; Du, W ; Liu, HW ; Kan, Q ; Wang, CX ; Xu, XS ; Chen, HD .Novel photonic crystal structure GaN-based light-emitting diodes - art. no. 68410J .见：SPIE-INT SOC OPTICAL ENGINEERING .SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES,1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA ,2008,6841: J8410-J8410 |
| Palavras-Chave | #光电子学 #GaN |
| Tipo |
会议论文 |
