Growth kinetics of 1-2 mm and 3-4 mm colonies of Nostoc sphaeroides (Cyanophyta) in outdoor culture

Nostoc sphaeroides Kutzing was cultivated in paddlewheel-driven raceway ponds and the growth kinetics of 1-2 mm and 3-4 mm colonies of N. sphaeroides was studied. The biomass productivities in 2.5 m(2) raceway ponds inoculated with 1-2 mm and 3-4 mm colonies were 5.2 and 0.25 g dry wt m(-2) stop d(-1), respectively. Furthermore, differently sized colonies showed different relative water content, total soluble carbohydrates, chlorophyll a content and density of filaments. This is the first report on mass culture of N. sphaeroides under outdoor conditions.

Effects of Ag on electrical properties of Ag/Ni/p-GaN ohmic contact

Properties of the Ag/Ni/p-GaN structure at different temperatures are studied by Auger electron spectroscopy, scanning electron microscopy and high resolution x-ray diffraction. The effect of Ag in ohmic contact on the crystalline quality is investigated and the optimized value of annealing temperature is reported. The lowest specific contact resistance of 2.5 x 10(-4) Omega cm(2) is obtained at annealing temperature of 550 degrees C.

Diode-pumped passively Q-switched Yb : YAG microchip laser with a GaAs as saturable absorber

A passively Q-switched Yb: YAG microchip laser has been constructed by using a doped GaAs as the saturable absorber as well as the output coupler. At 13.5 W of pump power the device produces high-quality 3.4 muJ 52 ns pulses at 1030nm with a pulse repetition rate of 7.8kHz in a TEM00-mode.

Self-organized InAs quantum wires on GaAs (331)A substrates

Self-organized InAs quantum wires (QWRs) were fabricated on the step edges of the GaAs (331)A surface by molecular beam epitaxy. The lateral size of InAs QWRs was saturated by the terrace width (i.e., 90 nm) while the size along the step lines increased with the increasing thicknesses of the InAs layers, up to 1100 nm. The height of InAs QWRs varied from 7.9 nm to 13 nm. The evolution of the morphology of InAs QWRs was attributed to the diffusion anisotropy of In adatoms.

Fourier transformation study of the Franz-Keldysh Oscillation in SIN+ GaAs structures

Fourier transformation (FT) method has been used in the theoretical lineshape analysis of the Franz-Keldysh Oscillation (FKO) in detail by numerical simulation. The FKO of a set of GaAs SIN+ samples was obtained in photoreflectance measurements. The FT spectra of a part of the samples,including of the real part,imaginary part, and mode of the FT,are well consistent with the theoretical lineshapes. The ratio of the square root of the reduced mass of the light hole (LH) to the heavy hole (HH), root mu(1)/root mu(h), obtained in the analysis was in the range of 0.805 to 0.816 for different samples. In addition,the built-in electric field F-1, and the modulation field delta F = F-1 - F-2 induced by photo-modulation were also obtained in the analysis. However,for a few samples great difference was found in the lineshape of the real part and imaginary part of their FT spectra from the theoretical lineshape. In this case the mode of the FT spectra still can be used to obtain useful information.

基于加同态公钥密码体制的匿名数字指纹方案

提出了一种基于加同态公钥密码算法的匿名数字指纹方案，并给出了具有匿名功能的公钥和私钥对的具体构造方法，从而使该匿名指纹方案在发现盗版的情况下，销售商不需要第三方的帮助就能鉴别出数字多媒体作品的非法分发者，解决版权纠纷时也不需要购买者参与并提供相关的秘密信息，从而达到实现两方审判的目的．分析结果表明，该方案具有用户匿名及不可关联、销售商的可保证安全性和用户的可保证安全性等特点．

纳米硅薄膜制备及HIT太阳能电池

在较高工作气压(332.5～399Pa)下,采用等离子增强化学气相沉积(PECVD)工艺制备了优质的本征纳米硅薄膜及掺磷的纳米硅薄膜,并采用X射线衍射(XRD)、拉曼散射(Raman) 测试技术对其进行了测试和分析.结果表明纳米硅薄膜的XRD谱中存在(111)、(220)和(331)峰位;Raman谱中显示出其薄膜中的晶粒的大小(2～5nm)符合纳米晶的要求.将制备的纳米硅薄膜初步用于栅极/ITO/n-nc-Si∶H/i-nc-Si∶H/p-c-Si/Al/Ag结构的异质结(HIT)太阳能电池,开路电压(Voc)达404mV,短路电流密度(Jsc)可达到34.2mA/cm2(AM1.5,100mW/cm~2,25℃).

SIN~+GaAs结构中的Franz-Keldysh振荡的傅里叶变换研究

利用傅里叶变换(FT)方法，对Franz-Keldysh振荡(FKO)的理论线性作了详细的数值模拟，并用光调制反射谱(PR)测量了一组本征层(I层)厚度不同的表面-本征层n-型重掺杂层(SIN~+)结构的GaAs样品的FKO.PR谱的FT分析表明，一部分样品的FT谱，包括其实部、虚部和模，与理论线性符合得比较好，由此求出轻空空(LH)和重空穴(HH)的约化质量平方根之比μ_1~(1/2)/(μ_h)~(1/2)对不同样品在0.805-0.816之间，同时也可以求出样品中的内建电场强度F_1，和调制光引起的调制电场δF=F_1-F_2。有一些样品的FT谱实部和虚部与理论线性差别很大，用FT的模仍可以给出有用的信息。