Effects of Ag on electrical properties of Ag/Ni/p-GaN ohmic contact
| Data(s) |
2007
|
|---|---|
| Resumo |
Properties of the Ag/Ni/p-GaN structure at different temperatures are studied by Auger electron spectroscopy, scanning electron microscopy and high resolution x-ray diffraction. The effect of Ag in ohmic contact on the crystalline quality is investigated and the optimized value of annealing temperature is reported. The lowest specific contact resistance of 2.5 x 10(-4) Omega cm(2) is obtained at annealing temperature of 550 degrees C. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Zhao, DS (Zhao De-Sheng); Zhang, SM (Zhang Shu-Ming); Duan, LH (Duan Li-Hong); Wang, YT (Wang Yu-Tian); Jiang, DS (Jiang De-Sheng); Liu, WB (Liu Wen-Bao); Zhang, BS (Zhang Bao-Shun) .Effects of Ag on electrical properties of Ag/Ni/p-GaN ohmic contact ,CHINESE PHYSICS LETTERS,JUN 2007,24 (6):1741-1744 |
| Palavras-Chave | #光电子学 #LIGHT-EMITTING-DIODES |
| Tipo |
期刊论文 |
